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- 摘要
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AlInGaN-based superlattice p-region for improvement of performance of deep UV LEDs
摘要： A deep ultraviolet light-emitting diode (DUV LED) consisting of a specifically designed intermediate p-type region involving a superlattice quaternary nitride alloy has been proposed. The light output power of the proposed structure has been found significantly large; around 28.30 times high in comparison to the conventional structure, at the current density of 200 A/cm2. The maximum internal quantum efficiency of the proposed structure is 153.63% higher compared to the conventional one. Moreover, the efficiency droop has been reduced by 99.08%. Absence of abrupt potential barrier owing to the strain compensation provided by the superlattice p-AlInGaN layer offers an attractive solution for enhancing the hole injection into the active region leading to the improvement in performance of DUV LED.
关键词： Efficiency droop,Superlattice-AlInGaN,Strain compensation,DUV LED
更新于2025-09-23 15:21:01
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Performance enhancement of AlGaN-based deep ultraviolet light-emitting diodes by using stepped and super-lattice n-type confinement layer
摘要： In this paper, a new n-type confinement layer that uses the stepped and super-lattice structure to replace conventional n-type AlGaN layer of deep ultraviolet light-emitting diode (DUV LED) is investigated. The simulation results indicate that the new structure significantly enhances the light output power (LOP) and internal quantum efficiency (IQE) of DUV LED. This is because the capability of carrier confinement in the quantum wells (QWs) is enhanced; the carrier concentrations and the radiative recombination rate in the active region of DUV LED are improved.
关键词： n-type confinement layer,DUV LED,Performance enhancement
更新于2025-09-23 15:19:57
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Monolithic integration of deep ultraviolet LED with a multiplicative photoelectric converter
摘要： Vertically monolithic integration of multiple devices on a single chip has emerged as a promising approach to overcome the fundamental limits of material and physical properties, providing unique opportunities to harness their complementary physics through integrated solutions to significantly enhance device performance. Herein, we demonstrate a deep ultraviolet light emitting diode (DUV LED) integrated with a multiplicative photoelectric converter (MPC) that is composed of p-GaN/intrinsic GaN/n-GaN (p-i-n GaN) structure to induce the electric-optic conversion, thus considerably improve the hole injection efficiency. This p-i-n GaN structure acts as hole-multiplier via firstly DUV light absorption and then electron-hole pair generation. The newly generated electron-hole pairs are firstly separated by the electric field in the p-i-n GaN structure so that multiple holes are driven into multiple quantum wells (MQWs), and finally contribute to the radiative recombination, thus achieving a high wall plug efficiency (WPE) of 21.6%, which exhibits a 60-fold WPE enhancement compared to the conventional DUV LEDs. The monolithic integration strategy demonstrated here sheds light on developing highly efficient light emitters.
关键词： AlGaN,Multiplicative photoelectric converter,Monolithic integration,DUV LED,injection efficiency
更新于2025-09-16 10:30:52
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Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
摘要： High-quality and crack-free aluminum nitride (AlN) film on sapphire substrate is the foundation for high-efficiency aluminum gallium nitride (AlGaN)-based deep ultraviolet light-emitting diodes (DUV LEDs). We reported the growth of high-quality and crack-free AlN film on sapphire substrate with a nanometer-scale-thick AlN nucleation layer (NL). Three kinds of nanometer-scale-thick AlN NLs, including in situ low-temperature AlN (LT-AlN) NL, oxygen-undoped ex situ sputtered AlN NL, and oxygen-doped ex situ sputtered AlN NL, were prepared for epitaxial growth of AlN films on sapphire substrates. The influence of nanoscale AlN NL thickness on the optical transmittance, strain state, surface morphology, and threading dislocation (TD) density of the grown AlN film on sapphire substrate were carefully investigated. The average optical transmittance of AlN film on sapphire substrate with oxygen-doped sputtered AlN NL was higher than that of AlN films on sapphire substrates with LT-AlN NL and oxygen-undoped sputtered AlN NL in the 200–270 nm wavelength region. However, the AlN film on sapphire substrate with oxygen-undoped sputtered AlN NL had the lowest TD density among AlN films on sapphire substrates. The AlN film on sapphire substrate with the optimum thickness of sputtered AlN NL showed weak tensile stress, a crack-free surface, and low TD density. Furthermore, a 270-nm AlGaN-based DUV LED was grown on the high-quality and crack-free AlN film. We believe that our results offer a promising and practical route for obtaining high-quality and crack-free AlN film for DUV LED.
关键词： crystal quality,tensile stress,nucleation layer,surface morphology,DUV LED
更新于2025-09-11 14:15:04