Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: A review

摘要： III-nitride deep ultraviolet (DUV) light-emitting diodes (LEDs) are identified as the promising candidate for energy-efficient, environment-friendly and robust UV lighting source in the application of water/air purification, sterilization, and bio-sensing. However, the state-of-art DUV LED performance is far from satisfaction for commercialization owing to its low internal quantum efficiency, large current leakage and efficiency droop at high current injection, etc. Extensive efforts have been devoted to properly designing the band structures of such luminescent devices to enhance their output power. In this review, we summarize the recent progress on various energy band designs and engineering of DUV LEDs, with particular of interest is paid on the various approaches in band engineering of the electron-blocking layer, quantum well, quantum barrier and the implementation of many novel structures such as tunnel junctions, ultrathin quantum heterostructures to enhance their efficiency. Those inspirational approaches pave the way towards the next generation of greener and efficient UV sources for practical applications.