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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Enhancing Photocarrier Bulk Lifetime with Defect Engineering of Polycrystalline Passivated-Contact n-Cz Photovoltaic Devices
摘要： We study the photocarrier lifetime evolution of n-Cz Si material throughout the processing sequence for polycrystalline passivated contact devices. We show that a high temperature annealing pretreatment (known as Tabula Rasa) has a clear effect on enhancing bulk lifetimes of n-Cz Si. We further this development by integrating such defect engineering into the lower-temperature annealing of passivated contact. By applying oxidizing ambient gases during these anneals we report a photocarrier lifetime enhancement over an N2 environment. This enhancement is exhibited in a 1-sun iVOC of 735 mV when annealed in O2 rather than 708 mV in N2.
关键词： monocrystalline silicon,intrinsic point defects,passivation,thermal processing,Czochralski,photocarrier lifetime
更新于2025-09-23 15:21:01
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TBP precursor agent passivated ZnO electron transport layer for highly efficient polymer solar cells
摘要： Defects passivation in electron transport layer (ETL) is a key issue to optimize the performance of polymer solar cells (PSCs). In this work, a novel strategy is developed to form defects passivated ZnO ETL by introducing 4-tert-butylpyridine (TBP) agent into precursor. While the power conversion efficiency (PCE) of the inverted PSCs based poly{4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl-alt-3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophene-4,6-diyl}:[6,6]-phenyl C71-butyric acid methyl ester (PTB7:PC71BM) with the pure ZnO ETL is 8.02%, that of the device with modified ZnO ETL is dramatically improved to 10.26%, with TBP accounting for ~28% efficiency improvement. Our study demonstrates that the precursor agent significantly affect the surface morphology and size of ZnO in ETL. Furthermore, it proves that the ZnO ETL with TBP (T-ZnO) is beneficial to polish interfacial contact between ETL and active layer and depress exciton quenching loss, resulting in enhanced exciton dissociation, efficient carrier collection and reduced charge recombination, thus improving the device performance. To verify the universality of T-ZnO ETL, the champion photovoltaic performance with a PCE of 11.74% (10% improvement) are obtained in the PBDB-T-2F:IT-4F based nonfullerene PSCs using T-ZnO as ETL. Our work developed a new, universal and facile strategy for designing highly efficient PSCs based on fullerene and nonfullerene blend systems.
关键词： Electron transport layer,4-tert-butylpyridine,ZnO,Defects passivation,Polymer solar cells
更新于2025-09-16 10:30:52
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Reference Module in Chemistry, Molecular Sciences and Chemical Engineering || Interface Potentials, Intrinsic Defects, and Passivation Mechanisms in Al 2 O 3 , HfO 2 , and TiO 2 Ultrathin Films
摘要： For the tailoring of interface properties in terms of providing active centers for surface reactions, surface passivation, or the adjustment of surface potentials, ultrathin metal oxide surface coatings are of importance. In this contribution we report about the applicability of Al2O3, HfO2, and TiO2 ultrathin films prepared by atomic layer deposition (ALD) regarding the aforementioned items. We have selected these metal oxides because of their wide field of applications. HfO2 is the main competitor for the replacement of SiO2 in microelectronic devices.1,2 Al2O3 ALD films are applied for passivation schemes in silicon-based3 and more recently perovskite solar cells.4 TiO2 is, for example, attractive for resistive switching devices5 and as active or passive layer in energy conversion applications such as solar cells6 or water splitting devices,7,8 to name a few. Here, the use of the ALD technique brings advantages such as: (i) precise thickness control to optimize the trade-off between light absorption (in a range of depletion layer) and charge separation (thinner thickness),7 (ii) high conformity to coat complex structures accompanied by increased light absorption,7 and (iii) capability to control the band-gap narrowing by doping with W7 or N9,10 and hence allow visible light absorption.
关键词： Al2O3,HfO2,TiO2,ultrathin films,interface potentials,intrinsic defects,passivation mechanisms,atomic layer deposition
更新于2025-09-04 15:30:14