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Light-Tuned DC Conductance of Anatase TiO2 Nanotubular Arrays: Features of Long-Range Charge Transport
摘要： Experimental results related to the photoactivated dc conductance of anatase TiO2 nanotubular arrays (aTNTAs) under pulsed irradiation by a laser light inside and outside the fundamental absorption band are presented. It is found that the mobility and diffusion coefficients of charge carriers in the examined aTNTA are extremely low due to a strong charge-phonon coupling, abundance of shallow traps, and hopping conductivity between adjacent nanotubes. We consider that the confining electric field appeared within the array structure due to the difference in the local concentrations of excess electrons and holes at large values of the dc conductance suppresses the drift current. In this case, the dc conductance of such aTNTAs is mainly matured by the diffusion of mobile carriers. A recurrent kinetic model for evolution of the dc conductance of aTNTAs under laser irradiation has been proposed to interpret the experimental results.
关键词： anatase nanotubes,laser irradiation,dc conductance,Urbach energy,drift current,inter-band transition,diffusion current,charge mobility
更新于2025-09-10 09:29:36
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Relationship Between the Mobility and the Schottky Contact in Indium-Gallium-Zinc-Oxide Thin Film
摘要： This presents the contact mechanism to understand the relationship between the Schottky contact and tunneling phenomenon on in the IGZO (Indium Gallium Zinc Oxide) Thin Film. The tunneling transistors with bi-directional ambipolar transfer characteristics were made by high potential barriers at the Schottky contact related to the depletion layer. The IGZO thin film transistor was prepared on SiOC with various annealing temperatures of 100 °C～400 °C. The performance of TFT was improved at SiOC annealed at 300 °C with the Schottky contact. The IGS curves of TFT with SiOC annealed at 300 °C showed high Ion/Ioff ratio and without the threshold voltage shift, when applied at VDS = 0.0001 V, because of the tunneling phenomenon from the band to band of diffusion currents through deep potential barrier.
关键词： IGZO,Schottky Contact,SiOC,Diffusion Current,Ambipolar Transfer Characteristics
更新于2025-09-04 15:30:14