- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Two-dimensional Kagome Lattices Made of Hetero Triangulenes are Dirac Semimetals or Single-Band Semiconductors
摘要： Here we discuss, based on first-principles calculations, two-dimensional (2D) kagome lattices composed of polymerized hetero-triangulene units, planar molecules with D3h point group containing a B, C or N center atom and CH2, O or CO bridges. We explore the design principles for a functional lattice made of 2D polymers, which involves control of π-conjugation and electronic structure of the knots. The former is achieved by the chemical potential of the bridge groups, while the latter is controlled by the heteroatom. The resulting 2D kagome polymers have a characteristic electronic structure with a Dirac band sandwiched by two flat bands and are either Dirac semimetals (C center), or single-band semiconductors - materials with either exclusively electrons (B center) or holes (N center) as charge carriers of very high mobility, reaching values of up to ~8×103 cm2V-1s-1, which is comparable to crystalline silicon.
关键词： high mobility,charge carriers,single-band semiconductors,hetero-triangulene units,Dirac semimetals,two-dimensional kagome lattices
更新于2025-09-23 15:21:21
-
High responsivity and fast UV-Vis-SWIR photodetector based on Cd3As2/MoS2 heterojunction
摘要： High responsivity, fast response time, ultra-wide detection spectrum are pursuing goals for state-of-art photodetectors. Cd3As2, as a three-dimensional (3D) Dirac semimetal, has zero-bandgap, high light absorption rate in broad spectral region, and higher mobility than graphene at room temperature. However, photoconductive detectors based Cd3As2 suffer low quantum efficiency due to the absence of high built-in field. Here, Cd3As2 nanoplate/multilayer MoS2 heterojunction photodetector was fabricated and achieved a quite high responsivity of 2.7×103 A/W at room temperature. The photodetector exhibits a short response time of in broad spectra region from ultraviolet (365 nm) to short-wavelength-infrared (1550 nm) and reached 65 μs at 650 nm. This work provides a great potential solution for high-performance photodetector and broadband imaging by combining 3D Dirac semi-metal materials with semiconductor materials.
关键词： 3D Dirac semimetals,broadband,photodetectors,responsivity,heterojunction
更新于2025-09-11 14:15:04