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Hydrogen sensing characteristics of AlGaInP/InGaAs enhancement/depletion-mode co-integrated doping-channel field-effect transistors
摘要： In this article, the hydrogen sensing characteristics of Al0.25Ga0.25In0.5P/In0.1Ga0.9As enhancement/depletion-mode co-integrated pseudomorphic doping-channel field-effect transistors by wet selectively etching process are demonstrated. At drain current of 0.1 mA/mm, the threshold voltages are of (cid:1)0.97 (t0.6) V and (cid:1)1.22 (t0.31) V in air and at hydrogen concentration of 9800 ppm, respectively, for the depletion (enhancement)-mode device. In addition, by employing the co-integrated FETs the transfer characteristics of the direct-coupled FET logic (DCFL) obviously vary under hydrogen ambience. The VOH value reduces and the VOL value increases in the DCFL with the measurement of hydrogen detection.
关键词： Threshold voltage,Hydrogen sense,Doping-channel field-effect transistor,Enhancement/depletion-mode,AlGaInP/InGaAs,Direct-coupled FET logic
更新于2025-09-23 15:22:29
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[IEEE 2019 IEEE International Conference on Electrical, Computer and Communication Technologies (ICECCT) - Coimbatore, India (2019.2.20-2019.2.22)] 2019 IEEE International Conference on Electrical, Computer and Communication Technologies (ICECCT) - Analysis and Design of Broadband MSA with Hybrid Coupled and Parasitic Patches
摘要： Broadband microstrip antennas are realized using multi resonator techniques such as gap coupled techniques in which fed patch is coupled to parasitic patches, or slot cut inside the same. Here wider bandwidth is achieved by reducing the frequency of higher order modes by increasing the surface current path length and bringing the higher order mode frequency closer to the frequency of fundamental mode of the antenna. The design of a RMSA with a directly coupled and two parasitic patches is reported that yields a bandwidth which is six times of that of the rectangular MSA. This paper presents detailed analysis to highlight upon functioning of broadband microstrip antenna with respect to patch resonant modes. The wider bandwidth is achieved due to the coupling between TM02 mode of directly coupled patch, TM01 mode of two parasitic patches and a composite TM21 mode of fed patch. Design procedure at other frequencies is presented which yields a bandwidth more than 6% with broadside pattern.
关键词： parasitic patches,Direct coupled,gap coupled,hybrid coupled,composite mode
更新于2025-09-19 17:13:59
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Comparative analysis of microstrip-line-fed gap-coupled and direct-coupled microstrip patch antennas for wideband applications
摘要： An attempt is made to improve the impedance bandwidth (S11) of a microstrip antenna by means of the gap-coupling method, yielding a bandwidth of 97.88% for the gap-coupled rectangular microstrip antenna (GC-RMSA) compared with 7.67% for the direct-coupled rectangular microstrip antenna with all dimensions the same. The maximum gain of the proposed (GC-RMSA) design is 6.725 dB with antenna efficiency of 99.86%. The proposed antenna design is analyzed using the IE3D simulator. The microstrip line feed technique is used to energize the antenna, and its performance as a function of the gap between the elements (g) and the width of the feed strip (W) is investigated. The results show that the impedance bandwidth of the gap-coupled antenna depends on the coupling gap between the elements; indeed, as the gap (g) is increased up to a certain level, the bandwidth of the proposed antenna increases, resulting in a wideband characteristic. However, after a certain value of the gap (g), the bandwidth decreases due to spurious radiation, and the antenna characteristic changes from wide to dual band with a corresponding decrease in the bandwidth. The proposed antenna design covers the frequency range from 2.093 to 6.105 GHz, including the C-band, S-band uplink and downlink frequencies, Wi-Fi, Bluetooth, WLAN, and IEEE (a/b/g) standard applications.
关键词： Gap coupled,Bandwidth,Microstrip line feed,IE3D,WLAN,Direct coupled
更新于2025-09-12 10:27:22