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Influence of the Supramolecular Arrangement in the Electrical Conductivity of Poly(thiophene) Thin Films
摘要： Thin ?lms of regioregular polythiophene derivatives have had their optical, structural and morphological properties characterized, but there is still a lack of comparative studies to determine the effect from deposition techniques, especially on the electrical properties. In this study, we produced Langmuir-Schaefer and spin-coated ?lms of regioregular alkyl-substituted polythiophene derivatives (P3AT) to investigate how distinct supramolecular arrangements can affect their properties. The Langmuir-Schaefer ?lms deposited on indium-tin oxide substrates were observed to grow linearly with the number of layers, according to UV-visible absorption spectroscopy. Atomic force microscopy and Brewster angle microscopy were carried out for morphological characterization. From electrical transport measurements, the DC electrical conductivity of Langmuir-Schaefer ?lms of P3AT was higher than the corresponding spin-coated ?lms, which can be related to the dissimilar roughness and molecular-level organization provided by the Langmuir-Schaefer technique.
关键词： Electrical Conductivity,Langmuir-Schaefer,Polythiophene
更新于2025-09-04 15:30:14
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Effect of Annealing Temperature on Morphology and Electrical Property of Hydrothermally-Grown ZnO Nanorods/ <i>p</i> -Si Heterojunction Diodes
摘要： In this study, ZnO nanorods (NRs) were synthesized using the hydrothermal method, and the effects of annealing temperature (150 °C–600 °C) on morphology, crystallinity, defects states of the NRs, and electrical property of the n-type ZnO NRs/p-type Si heterojunction diodes were investigated. No appreciable changes in the morphology and crystal structure of the ZnO NRs were observed with increasing annealing temperature up to 450 °C. As the temperature increased to 600 °C, the average length and diameter of the NRs decreased due to the partial melting and sintering in the NRs. From the X-ray photoelectron spectroscopy (XPS) results, the concentration of internal oxygen vacancies decreased with increasing annealing temperature to 450 °C due to thermal diffusion of oxygen vacancies to the surface. The electrical conductivity of the NRs increased to 450 °C, which was attributed to the increased crystallinity and low defects concentration (oxygen vacancy) in the NRs. Conversely, the electrical conductivity degraded at 600 °C due to the decreased effective contact area.
关键词： Annealing,Hydrothermal Process,pn Heterojunction,Electrical Conductivity,ZnO
更新于2025-09-04 15:30:14