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Effect of electron beam irradiation on structure, morphology, and optical properties of PVDF-HFP/PEO blend polymer electrolyte films
摘要： The effect of 8 MeV energy electron beam (EB) on poly (vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP)/poly-ethylene oxide (PEO) (@ w/w 90:10, PHP10) polymer blend films have been prepared and studied. The change in structure, morphology, and optical properties at 40, 80, and 120 kGy EB doses were investigated. The effect of the radiation process may responsible to occurs the degradation (chain scission) and chain link (cross linking) which are confirmed by the FT-IR analysis. The band at 1401 cm?1 corresponding to the –CH2– bending or scission mode have shifted to 1397 cm?1 after 120 kGy EB dose is due to the intermolecular interaction and the changes of the macromolecular chain by breaking of bonds with increased EB dose was observed. The XRD pattern shows decreased in the crystallinity from 60.03 to 23.42% and increased amorphousity for 120 kGy EB dose the and the surface morphology was drastically changed by decreasing the size of spherulites upon increased EB dose. The increase in optical absorption and the shifting of wavelength toward a higher end (red shift) was observed after the irradiation. The energy band gaps (Eg), and Urbach energy were estimated and they are found to be decreased, but the number of carbon atoms in a cluster of was increased with increased EB dose. The obtained results notice that the physical properties of polymer blend electrolytes can be improved by EB irradiation to use in different potential applications.
关键词： Polymer electrolyte,FESEM,UV–visible spectroscopy,Structural analysis,Electron beam irradiation
更新于2025-11-21 11:01:37
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Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS <sub/>2</sub> Field-Effect Transistors
摘要： Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the transport properties of the device. A negative threshold voltage shift and a carrier mobility enhancement is observed and explained in terms of positive charges trapped in the SiO2 gate oxide, during the irradiation. The transistor channel current is increased up to three order of magnitudes after the exposure to an irradiation dose of 100e-/nm2. Finally, a complete field emission characterization of the MoS2 flake, achieving emission stability for several hours and a minimum turn-on field of ≈ 20 V/μm with a field enhancement factor of about 500 at anode-cathode distance of ~1.5 μm, demonstrates the suitability of few-layer MoS2 as two-dimensional emitting surface for cold-cathode applications.
关键词： electron beam irradiation,2D materials,field emission,molybdenum disulfide,field effect transistors
更新于2025-09-23 15:23:52
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Combination of Pd loading and electron beam irradiation for superior hydrogen sensing of electrospun ZnO nanofibers
摘要： We evaluated the hydrogen gas-sensing characteristics of Pd-loaded (0.1, 0.3, 0.6, and 1 wt%) ZnO nano?bers prepared by a facile electrospinning technique and the e?ect of di?erent electron beam (e-beam) doses (50, 100, and 150 kGy) on sensing performance. The sensor loaded with 0.6 wt% Pd had the highest response to hydrogen among the Pd-loaded sensors. The sensor irradiated with 150 kGy had the high response (Ra/Rg) of 74.7–100 ppb of H2 at 350 °C. Metallization e?ects in ZnO, the formation of structural defects due to e-beam irradiation, the catalytic activity of Pd, and the presence of ZnO–Pd heterojunctions were the main factors yielding high sensitivity towards H2. The strategy of combining e-beam irradiation and Pd loading to enhance H2 sensing can be applied to realize reliable gas sensors and the widespread use of hydrogen as a green energy alternative to fossil fuels.
关键词： H2,Electron beam irradiation,Gas sensors,ZnO nano?bers,Pd nanoparticles
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE 2nd International Conference on Dielectrics (ICD) - Budapest (2018.7.1-2018.7.5)] 2018 IEEE 2nd International Conference on Dielectrics (ICD) - Modelling Charge Generation and Transport in Low Density Polyethylene Irradiated by an Electron-Beam
摘要： One way to bypass charge generation due to injection in an insulator sandwiched between parallel electrodes and submitted to an applied voltage is to implant charges in the material with the help of an electron beam. The electrons position and quantity is theoretically known as long as the beam energy and beam current are known. Low density polyethylene (LDPE) has been characterized with in-situ space charge measurements by pulsed electroacoustic method during irradiation, and with ex-situ measurements while a DC voltage is applied. A fluid charge transport model has been developed using a commercial software, to reproduce the space charge behaviour during and after irradiation. Simulated results during irradiation are first compared to in-situ space charge measurements, in order to validate the model parameters related to e-beam irradiation. Simulations are then performed on post-irradiated samples, polarized under different electric fields. Space charge measurements and current measurements are available for comparison. Simulated results are in relatively good agreement with experimental ones as long as the model parameters are adapted to irradiated low density polyethylene, compared to a best set of parameters adapted uniquely for non-irradiated polyethylene.
关键词： charge generation and transport,fluid model,LDPE,ageing,electron-beam irradiation
更新于2025-09-23 15:22:29
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Liquid Phase Studies of Nanomaterials
摘要： Liquid cell transmission electron microscopy (LCTEM) is a relatively new technique enabling researchers to study dynamic phenomena in materials sciences, life sciences and electrochemistry. LCTEM has proved to be a remarkable tool for observing colloidal nanoparticle syntheses at fairly high temporal and spatial resolutions offered by transmission electron microscopy (TEM). Though the idea of observing syntheses in their native media is not new, a practical approach has only been made possible through massive improvements in microfabrication technology to fabricate liquid cells.[1] The idea is to use thin window materials such as SiN membranes (50 nm or less) to encapsulate tens of cubic nanometers of liquid in a stable thin profile suitable forTEM imaging considering the vacuum environment of the microscope (Fig. 1).
关键词： Radiolysis,Nanoparticles,Electron beam irradiation,Solvent,Liquid cell TEM
更新于2025-09-23 15:21:21
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Atomic diffusion induced by electron-beam irradiation: An <i>in situ</i> study of Ag structures grown from <i>α</i> -Ag <sub/>2</sub> WO <sub/>4</sub>
摘要： In this paper, we investigate the structural and morphological changes caused by the electron-beam irradiation that led to the growth of complex extruded filaments on the surfaces of α-Ag2WO4. To provide a complete description of this phenomenon, both scanning electron microscope (SEM) and transmission electron microscope (TEM) were employed in this study. Our experimental results evidenced that the extruded material was able to growth in different crystallographic faces, depending on the kind of microscope adopted during the electron-beam irradiation. For a more complete analysis, different electron-beam current densities in TEM were used to investigate all in situ modifications in the microcrystals. For the first time, besides the metallic silver, the presence of silver oxides (Ag2O and Ag3O4) were detected in the composition of extruded material. The diffusion mechanisms related to morphological modifications in the samples irradiated in SEM and TEM were discussed in details. The co-precipitation reaction in dimethyl sulfoxide was chosen as synthetic route, which favored the appearance of rectangular rod-like α-Ag2WO4 microcrystals. A growth mechanism was proposed to explain the formation and growth processes of these microcrystals.
关键词： silver filaments,α-Ag2WO4,silver oxides,electron-beam irradiation,diffusion mechanisms
更新于2025-09-23 15:21:01
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Enhancement of the surface properties of selective laser melted maraging steel by large pulsed electron-beam irradiation
摘要： The present work aimed to decrease the surface roughness of maraging steel (MS) by selective laser melting (SLM) using large pulsed electron-beam (LPEB) irradiation as a post-treatment. The MS samples were fabricated using different combinations of laser power, scanning speed, hatch distance, and build angle. The morphological features, surface roughness, phase content, and corrosion resistance of the MS samples in their as-fabricated (ASF) state were compared after LPEB irradiation. The ASF SLM-MS samples exhibit the presence of partially melted particles that spread over the entire surface and many cracks in both the longitudinal and transverse directions. A higher arithmetical mean height (Sa: 2-17 μm), large variations in Sa measured at various locations, and a strong dependence of Sa on build angle were also observed. Post-treatment by LPEB irradiation removed the partially melted particles, while reflow of the molten mass filled the cracks and voids and facilitated the formation of a uniform surface with a bright metallic finish. This has resulted in a significant decrease in Sa (0.50-4.50 μm) and a smaller variation in Sa measured at different locations. Body-centered cubic α-martensite was the predominant phase for the ASF SLM-MS samples, along with a small fraction face-centered cubic γ-austenite phase. After LPEB irradiation, the martensite was reverted to the austenite phase. The corrosion resistance of the LPEB-irradiated samples was moderately better than that of the ASF SLM-MS samples. The uniform surface morphology, removal of partially melted particles, absence of pores and cracks, decrease in Sa, and moderate improvement in corrosion resistance suggests that LPEB irradiation can be used as a post-treatment for SLM-MS samples.
关键词： corrosion resistance,large pulse electron beam irradiation,maraging steel,Selective laser melting,surface roughness
更新于2025-09-23 15:19:57
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Improving Radiation Resistance of GaInP/GaInAs/Ge Triple-Junction Solar Cells Using GaInP Back-Surface Field in the Middle Subcell
摘要： This paper studies the radiation resistance for GaInP/GaInAs/Ge triple-junction space solar cells with a GaInP back-surface ?eld (BSF) in the GaInAs middle subcell compared with those with an AlGaAs BSF. The results show that the initial electrical performance is almost the same for both of them. However, the radiation resistance of the GaInP BSF cell was improved. After irradiation by 1 MeV electron beam with a cumulative dose of 1015 e/cm2, the Jsc declined by 4.73% and 6.61% for the GaInP BSF cell and the AlGaAs BSF cell, respectively; the e?ciency degradation was 13.64% and 14.61% for the GaInP BSF cell and the AlGaAs BSF cell, respectively, leading to a reduced degradation level of 6%. The mechanism for GaInP BSF to improve the radiation resistance of GaInP/GaInAs/Ge triple-junction solar cells is also discussed in this work. Similar results were obtained when irradiation cumulative doses varied from 1 × 1014 e/cm2 to 1 × 1016 e/cm2.
关键词： back-surface ?eld,electron beam irradiation,GaInP/GaInAs/Ge triple-junction space solar cell,radiation resistance
更新于2025-09-23 15:19:57
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Pulsed laser deposition of a ZnO:Eu3+ thin film: study of the luminescence and surface state under electron beam irradiation
摘要： A highly c-axis orientated Eu3+ doped ZnO (ZnO:Eu3+) thin film was successfully deposited by pulsed laser deposition in an oxygen working atmosphere. The structure, morphology, chemical analysis and luminescence properties of the sample were investigated. The effect of electron beam irradiation on the surface state, chemical and luminescence properties of the sample were studied. Successful incorporation of Eu3+ ions in the ZnO matrix was confirmed by X-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) analysis. XPS measurements revealed traces of the divalent (Eu2+) on the film surface while the trivalent (Eu3+) oxidation state in the bulk of the film. XPS depth profile confirmed that the film contained excess oxygen throughout the film. The film exhibited exciton and defect emission of ZnO as well as 4f – 4f characteristic emission of Eu3+ ions superimposed on the defect emission when excited at 325 nm using a He-Cd laser. Whereas only 4f – 4f characteristic emission of Eu3+ ions was recorded when the film was excited at 464 nm and also when excited with the electron beam. XPS high resolution spectra of the O 1s peak confirmed the creation of new defects during electron beam irradiation. In general, ZnO:Eu3+ films show potential for applications as a source of red light in optoelectronic devices.
关键词： Degradation,PLD,ZnO thin film,Eu3+ ions,Cathodoluminescence,Red emission,Electron beam irradiation
更新于2025-09-19 17:13:59
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Impact of grain growth of silver reflective electrode by electron bombardment on external quantum efficiency of III-nitride micro-light-emitting diode arrays
摘要： The effect of electron-beam irradiation (EBI) on Ag reflector is investigated in order to improve the efficiency of flip-chip InGaN/GaN multiple-quantum-wells micro light-emitting diode (μ-LED) arrays. After EBI, small size grains are diffused and then become larger grain. Therefore, grain boundaries are reduced which originates the crystal quality and reflectance of Ag reflect to improve. Grain size of Ag reflector is increased with the increase in EBI time that is consistently observed by different kinds of material characterizations. 5 minutes EBI-based Ag reflector shows higher reflectance (~91 %) at 450 nm than without EBI sample (~84 %). Finally, without and with EBI on Ag reflector-based μ-LED arrays are fabricated. After EBI, there is no change in forward bias voltage except optical performances. At driving current, Ag reflector with EBI-based μ-LEDs has higher light-output-power, electroluminescence intensity and electroluminescence distribution over the chip area compared to without EBI-based μ-LEDs. Usually, increased light-extraction-efficiency causes the external-quantum-efficiency of the μ-LEDs to increase. These enhanced optoelectronic performances are consistently described by using microscopic and macroscopic characterizations.
关键词： Ag reflector,Electron-beam irradiation,reflectance,micro light-emitting diodes,grain size
更新于2025-09-19 17:13:59