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AIP Conference Proceedings [AIP Publishing PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS WITH HIERARCHICAL STRUCTURE FOR NEW TECHNOLOGIES AND RELIABLE STRUCTURES 2019 - Tomsk, Russia (1a??5 October 2019)] PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS WITH HIERARCHICAL STRUCTURE FOR NEW TECHNOLOGIES AND RELIABLE STRUCTURES 2019 - Surface modification of selective laser melted Ti-6Al-4V by ultrasonic impact treatment and electron beam irradiation
摘要： Changes of the surface roughness, microstructure, phase composition and microhardness of selective laser melted Ti-6Al-4V samples during electron beam irradiation and ultrasonic impact treatment were investigated by contact profilometry, optical microscopy, X-ray analysis, and hardness measurement. It was shown that electron beam irradiation and ultrasonic impact treatment of the selective laser melted Ti-6Al-4V samples smooth their surface. Significant refinement of the microstructure and TiO nanoparticles formation under ultrasonic impact treatment occur causing the increase in surface microhardness. Electron beam irradiation leads to a more significant increase in both the microhardness and thickness of the melted surface layer due to martensitic transformation.
关键词： Ti-6Al-4V,surface modification,ultrasonic impact treatment,Selective laser melting,electron beam irradiation
更新于2025-09-16 10:30:52
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Athermal coalescence of two parallel and contacting amorphous SiOx nanowires as induced by uniform e-beam irradiation
摘要： The coalescence of two parallel and contacting amorphous SiOx nanowires (a-SiOx NWs) as induced by uniform electron beam irradiation was in-situ studied at room temperature in a transmission electron microscope. It was observed that during the irradiation the two parallel and contacting nanowires exhibited a rapid athermal coalescence at and near the contacting surface and finally evolved into a single nanowire with a bigger diameter where the atom loss during the coalescence process was not observed. Based on the atom diffusion and plastic flow driven by the nanocurature of a-SiOx NWs, and the beam-induced athermal activation induced by the electron beam, a new mechanism was proposed to elucidate the experimental phenomena.
关键词： beam-induced athermal activation,nanocurvature,welding,diffusion,electron beam irradiation
更新于2025-09-10 09:29:36
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A study of 8 MeV e-beam on localized defect states in ZnO nanostructures and its role on Photoluminescence and third harmonic generation
摘要： In this article we have explored an effect of electron beam irradiation (EBI) on physical and nonlinear optical properties ZnO thin nano films. Nanostructured ZnO thin films were grown by low cost spray pyrolysis technique. The irradiation dosage has been fixed at 5kGy, 10kGY, 15kGy and 20kGy. The structural investigation by Glancing angle X-Ray Diffractometer (GAXRD) confirms a polycrystalline phase of ZnO with wurtzite structure. The variation in the surface morphology upon EBI has been demonstrated using 2D and 3D Atomic force microscopy (AFM) images. Nanoscope software analysis quantifies the variation in surface roughness and average particle height upon EBI. The defect states created in the films upon irradiation experiments were investigated using UV- visible spectrophotometer, Room temperature Photoluminescence (RTPL), Raman and X-ray photoelectron spectroscopy (XPS). The increase in urbach tail validates the creation of localized defect states in the films The Gaussian fitting on RTPL spectra shows the quenching in the luminescent centers upon irradiation arised as result of recombination of vacancy defects. Phonon confinement model fitting on Raman spectra endorses that shift in the phonon modes observed on irradiation is due to spatial confinement of phonons. The elemental composition and impurity states of the EBI ZnO thin films were studied using XPS spectra. The shift in the binding energy of Zn and O elements infers the electron beam induced changes in the films. The electron beam irradiation has resulted in the increment of third order optical susceptibility χ(3) from 3.5×10-4esu to 8.13×10-3esu due to the enhancement of electronic transition to different defect levels formed in the films and through local heating effects arising due to continuous wave (CW) laser illumination. The enhanced THG signal investigated using Nd:YAG laser at 1064nm and 8 ns pulse width shows the promising features of EBI ZnO films for frequency tripling applications.
关键词： Electron beam irradiation,Phonon confinement model,third harmonic generation,ZnO nanostructures,Localized defect states
更新于2025-09-10 09:29:36
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Evaluation of sensitivity of Ge9As9Se82 and Ge16As24Se60 thin films to irradiation with electron beam
摘要： The interaction of Ge9As9Se82 and Ge16As24Se60 amorphous chalcogenide thin films with electron beam has been investigated. The kinetics of surface relief formation was determined for both film compositions. It was established that for identical electron beam irradiation parameters, the kinetics of relief formation can be correlated with charge accumulation rate, its final value inside films and charge diffusion away from the electron interaction region. Charge model has been used to explain various phenomena during electron beam interaction with studied systems and parameters of this model are determined. Application of studied systems in single stage electron beam lithography is also presented.
关键词： Surface potential,Electron beam irradiation,Chalcogenide thin films,Ge-As-Se
更新于2025-09-10 09:29:36
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Increased nitrogen-vacancy centre creation yield in diamond through electron beam irradiation at high temperature
摘要： The nitrogen-vacancy (NV) centre is a fluorescent defect in diamond that is of critical importance for applications from ensemble sensing to biolabelling. Hence, understanding and optimising the creation of NV centres in diamond is vital for technological progress in these areas. We demonstrate that simultaneous electron irradiation and annealing of a high-pressure high-temperature diamond sample increases the NV centre creation efficiency from substitutional nitrogen defects by up to 117% with respect to a sample where the processes are carried out consecutively, but using the same process parameters. This increase in fluorescence is supported by visible and infrared absorption spectroscopy experiments. Our results pave the way for a more efficient creation of NV centres in diamond as well as higher overall NV densities in the future.
关键词： diamond,nitrogen-vacancy centre,high temperature,fluorescence,absorption spectroscopy,electron beam irradiation
更新于2025-09-10 09:29:36