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VO2 microrods synthesized from V2O5 thin films
摘要： Self-assembled single crystal VO2 microrods (MRs) with a length up to 600 μm have been synthesized on Si and sapphire substrates by the annealing of V2O5 thin films. The nucleation and growth of VO2 MRs from V2O5 thin films were investigated. The morphology and microstructure evolutions of the intermediate phases during the reduction process were characterized by SEM, HRTEM, XPEEM, and Raman spectroscopy. The results have shown that the conversion of V2O5 thin films to VO2 MRs is dominated by a melting-nucleation-growth mechanism. The growth of VO2 MRs can be controlled by V2O5 melting process and a consistent feeding of V2O5 liquids to the growing VO2 MR would lead to ultra-long VO2 MRs. Further, epitaxial growth of VO2 MRs can be induced by using an r-cut sapphire substrate.
关键词： Growth mechanism,Reduction,V2O5 thin films,VO2 microrods,Epitaxial growth
更新于2025-09-23 15:23:52
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Enhancing Diamond NV Center Density in HPHT Substrate and Epitaxy Lateral Overgrowth Layer by Tungsten Pattern
摘要： The Nitrogen Vacancy (NV) center distribution in epitaxial lateral overgrowth (ELO) single crystal diamond layer grown on tungsten patterned HPHT substrate by microwave plasma chemical vapor deposition (CVD) system has been investigated. It has been found that in ELO diamond layer densities of NV0 and NV- center above the tungsten metal are enhanced. Meanwhile, in patterned high-pressure and high-temperature (HPHT) substrate the density of NV- center beneath the tungsten metal is much higher than that of NV0. The HPHT substrate doesn't contain NV centers before CVD growth, and there is almost no NV center in the region without tungsten metal after growth.
关键词： Defects,Carbon materials,Epitaxial growth,Luminescence,Crystal growth
更新于2025-09-23 15:23:52
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The finite size effect on the transport and magnetic properties of epitaxial Fe <sub/>3</sub> O <sub/>4</sub> thin films
摘要： Magnetite (Fe3O4) has great potential for use in the new field of spintronics due to its interesting physical properties, e.g., half-metallic ferromagnetic nature and metal–insulator transition (Verwey transition). Therefore, a basic understanding of these properties is essential for applications in spintronics devices, especially as the film thickness is reduced. In this work, the transport and magnetic properties of stoichiometric ultra-thin epitaxial Fe3O4 films have been investigated. The Fe3O4 films were grown on MgO (001) substrates using molecular beam epitaxy under optimal growth conditions. Low energy electron diffraction and X-ray photoemission spectroscopy confirmed that the films are single phase Fe3O4. The Verwey transition has been investigated using both transport and magnetization measurements. The magnetization measurements show a sharp Verwey transition in all of these films, which indicates that the films have properties comparable to the bulk. Furthermore, the magnetization measurements at room temperature show that the ultrathin films with thickness t < 20 nm are ferromagnetic with magnetization values greater than those for bulk magnetite. Such enhanced magnetization in ultrathin Fe3O4 films is very promising for spin injection and other applications.
关键词： Verwey Transition,Epitaxial Growth,Magnetization,Fe3O4,Thin Film
更新于2025-09-23 15:23:52
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Hetero-Orientation Epitaxial Growth of TiO2 Splats on Polycrystalline TiO2 Substrate
摘要： In the present study, the effect of titania (TiO2) substrate grain size and orientation on the epitaxial growth of TiO2 splat was investigated. Interestingly, the splat presented comparable grain size with that of substrate, indicating the hereditary feature of grain size. In addition, hetero- and homo-orientation epitaxial growth was observed at deposition temperatures below 400 °C and above 500 °C, respectively. The preferential growth of high-energy (001) face was also observed at low deposition temperatures (≤ 400 °C), which was found to result from dynamic nonequilibrium effect during the thermal spray deposition. Moreover, thermal spray deposition paves the way for a new approach to prepare high-energy (001) facets of TiO2 crystals.
关键词： hetero-orientation epitaxial growth,preferential growth,crystal morphology,homo-orientation epitaxial growth,deposition temperature,hereditary feature
更新于2025-09-23 15:22:29
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An Electrical Analysis of a Metal-Interlayer-Semiconductor Structure on High-Quality Si <sub/> 1? <i>x</i> </sub> Ge <sub/><i>x</i> </sub> Films for Non-Alloyed Ohmic Contact
摘要： In this paper, we have investigated the effect of a metal-interlayer-semiconductor (MIS) structure on intrinsic silicon-germanium (SiGe) film which is epitaxially grown by ultra-high vacuum chemical vapor deposition (UHV-CVD). Ultra-thin dielectric materials can alleviate Fermi-level pinning at the metal/Si1?xGex contact region by preventing penetration into the Si1?xGex of metal-induced gap states (MIGS) from the metal surface. The electrical properties which are the back-to-back current density and specific contact resistivity of the Ti/TiO2/Si1?xGex structure improve at the TiO2 interlayer thickness of 0.5 nm for all kinds of Si1?xGex film with various levels of germanium (Ge) concentration. The case of Si0.7Ge0.3 film, the specific contact resistivity of a Ti/TiO2(0.5 nm)/Si0.7Ge0.3 structure is reduced 80-fold compared to that of a Ti/Si0.7Ge0.3 structure. The effect of the MIS structure has been well demonstrated on Si1?xGex film, and as a result this structure is suggested as a novel source/drain (S/D) contact scheme for advanced Si1?xGex complementary metal-oxide-semiconductor (CMOS) technology.
关键词： Epitaxial Growth,Metal-Interlayer-Semiconductor,Source/Drain Contact,Silicon-Germanium,Fermi-Level Pinning,Specific Contact Resistivity
更新于2025-09-23 15:22:29
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Epitaxial Growth and Magnetic Properties of NiMnAs Films on GaAs Substrates
摘要： Single-phase Ni0.92Mn1.08As films with strained C1b symmetry are grown on GaAs (001) substrates. In addition, a preferred epitaxial configuration of (110)-orientated Ni0.92Mn1.08As on (001)-orientated GaAs is revealed by synchrotron radiation measurement. The magnetic properties of the films are found to be significantly influenced by the growth temperature and the optimized growth temperature is determined to be ～370°C. According to the results of x-ray absorption spectroscopy, these phenomena can be attributed to the variation of the local electronic structure of the Mn atoms. Our work provides useful information for the further investigations of NiMnAs, which is a theoretically predicted half-metal.
关键词： epitaxial growth,half-metal,Heusler alloy,magnetic properties,NiMnAs
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2018.6.21-2018.6.22)] 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Study on Threshold Voltage Hysteresis in GaN-Based Vertical Trench MOSFETs
摘要： In this paper, we studied hysteresis in transfer characteristics of GaN-based vertical trench MOSFETs fabricated using different process technologies for n+-GaN source layer. It was found that the device with epitaxially-grown source region can suppress hysteresis in the transfer characteristics compared to that with implanted source region.
关键词： ion implantation,threshold voltage,epitaxial growth,hysteresis,GaN,trench,MOSFET
更新于2025-09-23 15:22:29
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Epitaxial Growth of Orthorhombic GaFeO3 Thin Films on SrTiO3 (111) Substrates by Simple Sol-Gel Method
摘要： A Sol-gel method assisted with spin-coating has been successfully used to grow orthorhombic GaFeO3 epitaxial films on SrTiO3 (111) substrates for the first time. The film with Pna21 crystal structure has been grown along the c-axis. The rocking curve of (004) reflection shows that the Full-Width at Half-Maximum (FWHM) value could be determined to be 0.230°, indicating good single crystallinity and high quality. X-ray Φ scan reveals a three-fold symmetry of the substrate and a six-fold symmetry of the film, respectively. The in-plane domains rotate 60° from each other in the film. Uniform film with dense structure, columnar grains with similar grain size was obtained. The thickness of the film was evaluated to be ~170 nm. The roughness value (RMS) measured by AFM was 4.5 nm, revealing a flat film. The in-plane Magnetization versus Magnetic field (M-H) curve at 5 K performs a typical ferri- or ferromagnetic hysteresis loop with a saturated magnetization (Ms) value of 136 emu/cm3. The Curie temperature could be determined to be 174 K. Compared to Pulsed Laser Deposition (PLD), the sol-gel method can prepare large area films with low cost. These new films show promising applications in multiferroic devices.
关键词： GaFeO3 film,magnetic property,sol-gel method,multi-domain structure,epitaxial growth
更新于2025-09-23 15:22:29
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Study of NH3 flow duty-ratio in pulsed-flow epitaxial growth of non-polar a-plane Al0.34Ga0.66N films
摘要： The effects of the modulation in the NH3 flow duty-ratio in a three-way pulsed-flow epitaxial growth process on the structural and optical properties of non-polar a-plane Al0.34Ga0.66N epi-layers were studied intensively. It was revealed that the typical pyramidal defects originated from the anisotropy in growth rate could be evidently reduced with an optimized NH3 flow duty-ratio. In fact, the root-mean-square value determined with atomic force microscope was decreased from 12.8 to 3.1 nm when the NH3 flow duty-ratio was increased from 0 to 0.57. Moreover, the LO-phonon-assisted exciton emission observed in the photoluminescence (PL) spectrum was remarkably suppressed, and the linewidth of the near band edge PL emission peak was decreased by 47%, implying the significantly enhanced optical properties of the non-polar a-plane Al0.34Ga0.66N epi-layer.
关键词： Pulsed-flow epitaxial growth,NH3 flow duty-ratio,Non-polar a-plane AlGaN epi-layers
更新于2025-09-23 15:21:21
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Sb <sub/>2</sub> Te <sub/>3</sub> growth study reveals: Formation of Nanoscale Charge Carrier Domains Is an Intrinsic Feature Relevant for Electronic Applications
摘要： Sb2Te3 exhibits a plethora of fundamentally relevant electronic phenomena enabling electronic phase change memory cells, thermoelectric devices and three-dimensional topological insulator structures. Thus, the controlled growth of nanostructures and thin films with well-defined electronic properties is of uttermost importance. Previously, our group observed symmetric infrared domains in hexagonal Sb2Te3 nanoplatelets from a solvothermal chemical synthesis. The relative optical contrast observed was indirectly linked to the formation of regions with different defect densities (charge carrier concentrations). This raises two major questions, which we answer in this study: Is the domain formation restricted to the specific platelet growth process? No! Do the infrared spectra of both domains really follow a ‘Drude-like’ free charge carrier response? Yes! By controlling the initial water concentration, we promote the growth of the nanoplatelets in c-direction and tune the morphology from platelet-like to octahedra-like. Although the growth mode changes from spiral growth to layer-by-layer, similar infrared domains are identified using scattering-type scanning near-field optical microscopy (s-SNOM). Furthermore, we also reproduced the formation of symmetric infrared domains in thin, high quality crystalline films grown using molecular beam epitaxy (MBE). Normalized infrared near-field spectra of smaller Sb2Te3 nanoparticles reveal a relative shift of the plasma frequency in both domains. These findings demonstrate that the formation of domains with different charge carrier properties is an intrinsic material property of Sb2Te3 and might strongly influence all of its electronic applications.
关键词： infrared near-field microscopy,Antimony telluride,domain formation,van der Waals materials,transition metal dichalcogenides,epitaxial growth
更新于2025-09-23 15:21:21