- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
films
摘要： We report proximity effects of spin-orbit coupling in EuO1?x ?lms capped with a Pt overlayer. Transport measurements suggest that current ?ows along a conducting channel at the interface between the Pt and EuO. The temperature dependence of the resistivity picks up the critical behaviors of EuO, i.e., the metal-to-insulator transition. We also ?nd an unusual enhancement of the magnetic anisotropy in this structure from its bulk value, which results from strong spin-orbit coupling across the Pt/EuO1?x interface.
关键词： magnetic anisotropy,Pt/EuO interface,spin-orbit coupling,transport properties
更新于2025-09-23 15:21:01
-
Band offset modulation in Si-EuO heterostructures via controlled interface formation
摘要： Combining first-principles calculations and experiment, we investigate the atomic and electronic structure of the Si/EuO interface. We consider the thermodynamic stability of interface structures with different levels of oxidation to identify the most probable configuration. By comparing the calculated band alignment and core-level shifts with measured values, we validate the theoretically constructed interface model. We find that the band offset can be tuned by altering the relative energy positions of the Si and EuO conduction bands via interface oxidation, which can be used to tune this materials system for specific applications in spintronics.
关键词： XPS,band alignment,first-principles calculations,Si/EuO interface,spintronics
更新于2025-09-12 10:27:22
-
Spin splitting in EuO(111)/Si(111) spin-filter tunnel junctions with atomically sharp interface
摘要： We demonstrate the tunneling in spin-split barriers made of ferromagnetic EuO grown on Si(111) substrates by molecular beam epitaxy. For 6 nm thick EuO films with high crystal quality and atomically sharp interfaces, we find a barrier height lowering driven by the spin splitting below the Curie temperature of 35 K. We determined the splitting energy to be 0.56 + 0.03 eV at 20 K which results in a spin polarization above 90%.
关键词： molecular beam epitaxy,atomically sharp interface,EuO(111)/Si(111),spin splitting,spin-filter tunnel junctions
更新于2025-09-04 15:30:14
-
EuO epitaxy by oxygen scavenging on SrTiO <sub/>3</sub> (001): Effect of SrTiO <sub/>3</sub> thickness and temperature
摘要： The EuO/SrTiO3 heterojunction is a promising combination of a ferromagnetic material and a two-dimensional electron system. We explore the deposition of Eu metal on SrTiO3/Si pseudo-substrates, with varying SrTiO3 (STO) thickness, under ultrahigh vacuum conditions. By varying the thickness of the STO layer (2-10 nm) and the deposition temperature (20-300 °C), we investigate the process by which oxygen is scavenged from STO by Eu. In situ x-ray photoelectron spectroscopy is used to investigate the electronic structure of the nominal Eu/STO/Si stack. We ?nd that as a result of Eu deposition, epitaxial EuO is formed on thick STO (6-10 nm), leaving behind a highly oxygen-de?cient SrTiO3-δ layer of ～4 nm in thickness. However, if the thickness of the STO layer is comparable to or less than the scavenging depth, the crystal structure of STO is disrupted and a solid state reaction between Eu, Si, and STO occurs when the deposition is done at a high temperature (300 °C). On the other hand, at a low temperature (20 °C), only a 1-2 nm-thick EuO interlayer is grown, on top of which the Eu metal appears to be stable. This study elucidates the growth process under different conditions and provides a better understanding and control of this system.
关键词： SrTiO3,epitaxy,EuO,two-dimensional electron system,oxygen scavenging,ferromagnetic material
更新于2025-09-04 15:30:14