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- 摘要
- 关键词
- 实验方案
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Treatment of disorder effects in X-ray absorption spectra beyond the conventional approach
摘要: The contribution of static and thermal disorder is one of the largest challenges for the accurate determination of the atomic structure from the extended X-ray absorption fine structure (EXAFS). Although there are a number of generally accepted approaches to solve this problem, which are widely used in the EXAFS data analysis, they often provide less accurate results when applied to outer coordination shells around the absorbing atom. In this case, the advanced techniques based on the molecular dynamics and reverse Monte Carlo simulations are known to be more appropriate: their strengths and weaknesses are reviewed here.
关键词: Reverse Monte Carlo,Extended X-ray absorption fine structure (EXAFS),Molecular dynamics,Static and thermal disorder,X-ray absorption spectroscopy
更新于2025-09-23 15:23:52
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Local atomic structure of the GaN-side of the Al2O3/GaN interface revealed by X-ray absorption spectroscopy
摘要: The interface between a gate insulator (Al2O3) and a semiconductor (GaN) was investigated via surface-sensitive Ga K-edge extended X-ray absorption fine structure spectroscopy, achieved by detecting the Ga LMM Auger electrons originated from the Ga K-shell absorption. This GaN-side interface study was conducted on Al2O3 thin films formed via atomic layer deposition. The determined atomic structures revealed GaN crystalline changes and the formation of Ga–O bonds due to nitrogen annealing.
关键词: Aluminum oxide (Al2O3),Interface,Post-deposition annealing (PDA),Gallium nitride (GaN),Extended X-ray absorption fine structure (EXAFS),Atomic layer deposition (ALD)
更新于2025-09-19 17:13:59