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A Surface Potential Based Model for Dual Gate Bilayer Graphene Field Effect Transistor Including the Capacitive Effects
摘要： In this work, a surface potential modeling approach has been proposed to model dual gate, bilayer graphene field effect transistor. The equivalent capacitive network of GFET has been improved considering the quantum capacitance effect for each layer and inter-layer capacitances. Surface potentials of both layers are determined analytically from equivalent capacitive network. The explicit expression of drain to source current is established from drift-diffusion transport mechanism using the surface potentials of the layers. The drain current characteristics and transfer characteristics of the developed model shows good agreement with the experimental results in literatures. The small signal parameters of intrinsic graphene transistor i.e. output conductance (gds), trans-conductance (gm), gate to drain capacitance (Cgd) and gate to source capacitance (Cgs) have been derived and finally, the cut-off frequency is determined for the developed model. The model is compared with reported experimental data using Normalised Root Mean Square Error (NRMSE) metric and it shows less than 16% NRMSE. A Verilog-A code has been developed for this model and a single ended frequency doubler has been designed in Cadence design environment using this Verilog-A model.
关键词： model,Field-effect transistor (FET),Verilog-A,Graphene,surface potential,frequency doubler.
更新于2025-09-23 15:22:29
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Trap and 1/f-noise effects at the surface and core of GaN nanowire gate-all-around FET structure
摘要： Using capacitance, conductance and noise measurements, we investigate the trapping behavior at the surface and in the core of triangular-shaped one-dimensional (1D) array of GaN nanowire gate-all-around field effect transistor (GAA FET), fabricated via a top-down process. The surface traps in such a low dimensional device play a crucial role in determining the device performance. The estimated surface trap density rapidly decreases with increasing frequency, ranging from 6.07 × 1012 cm?2·eV?1 at 1 kHz to 1.90 × 1011 cm?2·eV?1 at 1 MHz, respectively. The noise results reveal that the power spectral density increases with gate voltage and clearly exhibits 1/f-noise signature in the accumulation region (Vgs > Vth = 3.4 V) for all frquencies. In the surface depletion region (1.5 V < Vgs < Vth), the device is governed by 1/f at lower frequencies and 1/f 2 noise at frequencies higher than ~ 5 kHz. The 1/f 2 noise characteristics is attributed to additional generation–recombination (G–R), mostly caused by the electron trapping/detrapping process through deep traps located in the surface depletion region of the nanowire. The cutoff frequency for the 1/f 2 noise characteristics further shifts to lower frequency of 102–103 Hz when the device operates in deep-subthreshold region (Vgs < 1.5 V). In this regime, the electron trapping/detrapping process through deep traps expands into the totally depleted nanowire core and the G–R noise prevails in the entire nanowire channel.
关键词： gate-all-around field effect transistor (FET),trap,nanowire,GaN,1/f-noise
更新于2025-09-23 15:22:29
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Effect of substrate coupling on the performance and variability of monolayer MoS2 transistors
摘要： We study the effect of substrate coupling on the variability and the device characteristics of monolayer MoS2 field-effect transistors (FETs). In our experiments, we fabricate and characterize three groups of back-gated FETs on SiO2/Si substrates, where each device set represents a distinct interfacial energy between MoS2 and SiO2. We also study a set of devices constructed on hexagonal boron nitride (h-BN) substrates, representing a fourth group where MoS2 is fully decoupled from SiO2. Our electrical measurement results reveal significant improvements of key FET device metrics (contact resistance, mobility, and subthreshold swing) and marked reduction of device variability with reducing the interfacial energy. We attribute the observed improvements of the device characteristics to the reduction of the interface trap density and the suppression of the charged impurity scattering. This study establishes the critical role of substrate coupling on the performance and variability of monolayer MoS2 FETs.
关键词： interfacial energy,variability,FET,MoS2
更新于2025-09-23 15:21:01
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Resonance Frequency Modulation for Rapid Point-of-care Ebola Glycoprotein Diagnosis with a Graphene-based Field-effect Bio-transistor
摘要： Recent outbreaks of the Ebola virus infection in several countries demand a rapid point-of-care (POC) detection strategy. This paper reports on an innovative pathway founded on electronic resonance frequency modulation to detect Ebola glycoprotein (GP), based on carrier injection-trapping-release-transfer mechanism and standard antibody-antigen interaction principle within a dielectric-gated reduced graphene oxide (rGO) field-effect transistor (GFET). The sensitivity of the current Ebola detection can be significantly enhanced by monitoring the device’s electronic resonance frequency, such as inflection frequency (fi), where phase angle reaches maximum (θmax). In addition to excellent selectivity, a sensitivity of ~36-160 % and ~17-40 % for 0.001-3.401 mg/L Ebola GP can be achieved at high and low inflection resonance frequencies, respectively, which are several orders of magnitude higher than the sensitivity from other electronic parameters (e.g., resistance-based sensitivity). Using equivalent circuit modelling on contributions of channel and contact, analytical equations for resonance shift have been generalized. When matching with the incoming ac measurement signal, electronic resonance from the phase angle spectrum is evolved from various relaxation processes (e.g., trap and release of injected charge at surface trap sites of channel-gate oxide and channel-source/drain interface) that are associated with a characteristic emission frequency. Using charge relaxation dynamics, a high-performance bio-FET sensing platform for healthcare and bio-electronic applications is realized through resonance shifting.
关键词： graphene-based field-effect transistor,Ebola glycoprotein,resonance frequency modulation,point-of-care detection,bio-FET sensing platform
更新于2025-09-23 15:21:01
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Complementary doping of van der Waals materials through controlled intercalation for monolithically integrated electronics
摘要： Doping control has been a key challenge for electronic applications of van der Waals materials. Here, we demonstrate complementary doping of black phosphorus using controlled ionic intercalation to achieve monolithic building elements. We characterize the anisotropic electrical transport as a function of ion concentrations and report a widely tunable resistivity up to three orders of magnitude with characteristic concentration dependence corresponding to phase transitions during intercalation. As a further step, we develop both p-type and n-type field effect transistors as well as electrical diodes with high device stability and performance. In addition, enhanced charge mobility from 380 to 820 cm2/(V·s) with the intercalation process is observed and explained as the suppressed neutral impurity scattering based on our ab initio calculations. Our study provides a unique approach to atomically control the electrical properties of van der Waals materials, and may open up new opportunities in developing advanced electronics and physics platforms.
关键词： nanoelectronics,two-dimensional (2D) materials and heterostructures,tunable properties,diode,black phosphorus,FET
更新于2025-09-23 15:19:57
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Tungsten Dichalcogenide Nanoflake/InGaZnO Thin-Film Heterojunction for Photodetector, Inverter, and AC Rectifier Circuits
摘要： Heterojunction PN diode and inverter circuits are fabricated and presented, combining two-dimensional WSe2 nanoflake and amorphous InGaZnO (a-IGZO) thin film on a glass substrate. A heterojunction p-WSe2/n-IGZO diode exhibits rectifying characteristics and effectively responds to red light (λ = 620 nm) under a reverse bias. The combination of a heterojunction PN diode and IGZO field effect transistor (FET) leads to a diode-load inverter showing a peak voltage gain of about 12 at a supply voltage of 5 V. The same integration from the PN diode and n-FET displays the capability of visible light detection when a reverse-bias voltage is applied to the PN diode. Furthermore, after oxygen plasma treatment on the PN diode, it shows dramatically enhanced on/off rectification ratio of ≈5 × 105 due to the hole doping effect on the WSe2 nanoflake. Such an improved PN diode leads to an alternating current rectifier circuit as integrated with IGZO FET.
关键词： field-effect transistor (FET),inverter,WSe2,InGaZnO (IGZO),heterojunction PN diode,AC rectifier
更新于2025-09-23 15:19:57
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[IEEE 2020 5th International Conference on Devices, Circuits and Systems (ICDCS) - Coimbatore, India (2020.3.5-2020.3.6)] 2020 5th International Conference on Devices, Circuits and Systems (ICDCS) - Heterojunction Tunnel Field Effect Transistors a?? A Detailed Review
摘要： Tunnel FET(TFET) can provide ultra-low quiescent (~pA) current. Some of the essential parameters for determining the characteristics of TFET are high ION current, constrained Subthreshold slope value, and reduced ambipolar leakage. TFET experiences a sub-threshold decrease of less than 60mV / decade in the process of the sub-threshold slope and hence higher transconductance per bias current than MOSFET. This article would be beneficial to get a review of various device structures and their performances of Tunnel FET. In this paper, we examined the multiple TFET device structures and compared their performances for attaining the desired ION / IOFF.
关键词： Tunnel FET(TFET),ambipolar,ION / IOFF
更新于2025-09-23 15:19:57
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Combining multimodal imaging and treatment features improves machine learning-based prognostic assessment in patients with glioblastoma multiforme
摘要： Background: For Glioblastoma (GBM), various prognostic nomograms have been proposed. This study aims to evaluate machine learning models to predict patients’ overall survival (OS) and progression‐free survival (PFS) on the basis of clinical, pathological, semantic MRI‐based, and FET‐PET/CT‐derived information. Finally, the value of adding treatment features was evaluated. Methods: One hundred and eighty‐nine patients were retrospectively analyzed. We assessed clinical, pathological, and treatment information. The VASARI set of semantic imaging features was determined on MRIs. Metabolic information was retained from preoperative FET‐PET/CT images. We generated multiple random survival forest prediction models on a patient training set and performed internal validation. Single feature class models were created including "clinical," "pathological," "MRI‐based," and "FET‐PET/CT‐based" models, as well as combinations. Treatment features were combined with all other features. Results: Of all single feature class models, the MRI‐based model had the highest prediction performance on the validation set for OS (C‐index: 0.61 [95% confidence interval: 0.51‐0.72]) and PFS (C‐index: 0.61 [0.50‐0.72]). The combination of all features did increase performance above all single feature class models up to C‐indices of 0.70 (0.59‐0.84) and 0.68 (0.57‐0.78) for OS and PFS, respectively. Adding treatment information further increased prognostic performance up to C‐indices of 0.73 (0.62‐0.84) and 0.71 (0.60‐0.81) on the validation set for OS and PFS, respectively, allowing significant stratification of patient groups for OS. Conclusions: MRI‐based features were the most relevant feature class for prognostic assessment. Combining clinical, pathological, and imaging information increased predictive power for OS and PFS. A further increase was achieved by adding treatment features.
关键词： prognostic model,machine learning,VASARI,glioblastoma,FET‐PET,biomarker,MRI
更新于2025-09-23 15:19:57
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Progress of power field effect transistor based on ultra-wide bandgap Ga <sub/>2</sub> O <sub/>3</sub> semiconductor material
摘要： As a promising ultra-wide bandgap semiconductor, gallium oxide (Ga2O3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field (8 MV/cm), ultra-wide bandgap (~ 4.8 eV) and large Baliga’s figure of merit (BFOM) of Ga2O3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor (FET). In this paper, we introduce the basic physical properties of Ga2O3 single crystal, and review the recent research process of Ga2O3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga2O3 is preliminary revealed. Finally, the prospect of the Ga2O3 based FET for power electronics application is analyzed.
关键词： ultra-wide bandgap semiconductor,field effect transistor (FET),power device,gallium oxide (Ga2O3)
更新于2025-09-19 17:15:36
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[IEEE 2018 International Flexible Electronics Technology Conference (IFETC) - Ottawa, ON (2018.8.7-2018.8.9)] 2018 International Flexible Electronics Technology Conference (IFETC) - 3D Printed Ion-Selective Field Effect Transistors
摘要： This report describes 3D printed ion-selective field effect transistors (IS-FET), which contains electro-chemical working electrodes for selective ion detection. For the comparison of behaviors, two different types of field effect transistors are fabricated by 3D printing and vacuum deposition. And both types of FETs are integrated with the 3D printed ion-selective electrodes. Then, the sensing performance of these two types of IS-FET has been investigated. The source-drain current for the whole 3D printed IS-FET is in the scale of 10-8 A, which can be compared with current scale of deposited IS-FET with 10-6 A.
关键词： ion-selective field effect transistors,3D printing,oxide FET
更新于2025-09-19 17:15:36