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Self-organized Ge nanospherical gate/SiO2/Si0.15Ge0.85-nanosheet n-FETs featuring high ON-OFF drain current ratio
摘要： We reported experimental fabrication and characterization of Si0.15Ge0.85 n-MOSFETs comprising a gate-stacking of Ge-nanospherical gate/SiO2/Si0.15Ge0.85-nanosheet on SOI (100) substrate in a self-organization approach. This unique gate-stacking heterostructure is simultaneously produced in a single oxidation step as a consequence of an exquisitely-controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials at 900oC. Process-controlled tunability of nanospherical gate of 60?100nm in diameter, gate oxide thickness of 3nm, and Si0.15Ge0.85 nanosheet with compressive strain of -2.5% was achieved. Superior gate modulation is evidenced by subthreshold slope of 150mV/dec and ION/IOFF > 5×108 (IOFF < 10-6 μA/μm and ION > 500 μA/μm) measured at VG = +1V, VD = +1V, and T = 80K for our device with channel length of 75nm.
关键词： self organization,Ge-gate,SiGe nanosheet,junctionless FET
更新于2025-09-10 09:29:36
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[IEEE 2018 Conference on Emerging Devices and Smart Systems (ICEDSS) - Tiruchengode, India (2018.3.2-2018.3.3)] 2018 Conference on Emerging Devices and Smart Systems (ICEDSS) - A Comparison of Analytical Modeling of Double Gate and Dual material Double GateTFETs with high-KStacked Gate-Oxide Structure forLow power Applications
摘要： In this paper, an analytical comparative study of Double Gate Tunnel Field Effect Transistors(DG-TFETs) and Dual Material Double Gate Tunnel Field Effect Transistors(DMDG-TFETs) with high-K stacked gate oxide structure are presented. The modeling is done by solving the Poisson’s equation with Parabolic Approximation Technique with suitable boundary conditions. By using channel potential model, Surface potential is calculated.The Drain current model is developed by integrating band to band tunneling generation rate. The different electrical characteristics like surface potential, Electric field and Drain current have been compared for both TFETs in this paper. On comparing DG-TFETs with Dual material, DMDG-TFETs provide an enhanced performance. The analytical results are also compared with TCAD simulated results for both the devices and good agreement is observed.
关键词： Band-to-band tunneling (BTBT),Tunnel FET (TFET),Dual-material (DM) gate,Parabolic Approximation Technique
更新于2025-09-09 09:28:46
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[IEEE 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Shenzhen (2018.6.6-2018.6.8)] 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Carrier Injection Mechanism of Metal-MoS<inf>2</inf> Ohmic Contact in MoS<inf>2</inf> FETs
摘要： In order to enhance the carrier injection of MoS2 field effect transistors (FETs,) understanding the injection mechanism of metal-MoS2 contacts is essential. In this work, MoS2 (FETs) with Ti and Sc electrodes were fabricated and characterized, respectively. The carrier injection mechanism was studied from the perspective of the tunneling models. With the narrower barrier width, the Sc-MoS2 contact shows a different injection mechanism from that of Ti-MoS2, making Sc a promising improvement as MoS2 FETs electrodes.
关键词： Ohmic contact,MoS2,tunneling,field effect transistor (FET)
更新于2025-09-09 09:28:46
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[IEEE 2018 2nd International Conference on Trends in Electronics and Informatics (ICOEI) - Tirunelveli, India (2018.5.11-2018.5.12)] 2018 2nd International Conference on Trends in Electronics and Informatics (ICOEI) - Heterojunction DG-TFET-Analysis of Different Source Material for Improved Intermodulation
摘要： In this paper, an extensive study on the intermodulation distortion and the linearity parameters of a double gate Tunnel FET (DG-TFET) has been done. The device is analyzed for three source materials i.e. Silicon, Germanium and Indium Arsenide, that results in formation of hetero-junction at the source and channel junction, using the SILVACO ATLAS device simulator. The simulation results reveal that the DG-TEFT design exhibits a significant enhancement in the device linearity and intermodulation distortion performance in terms of the various figure-of-merit metrics such as VIP2, VIP3, IIP3, IMD3 and the higher order transconductance coefficients gm1, gm2, and gm3 with the amalgamation of Ge as a source material in comparison with Si and InAs. The superior linearity and intermodulation distortion offered by Ge source DG-TFET thereby strengthen its efficacy for the designing of RFIC.
关键词： Band to band tunneling,Double Gate Tunnel FET,Linearity,Heterojunction,Intermodulation
更新于2025-09-09 09:28:46
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Performance analysis of a substrate-engineered monolayer MoS2 field-effect transistor
摘要： We investigate the impact of different substrates on the performance of a monolayer MoS2 field-effect transistor (FET) by calculating the interface charge density between the MoS2 layer and the substrate using first-principle calculations based on density functional theory to provide details about the overlap of electron orbitals at the interface. The electrical characteristics of the monolayer MoS2 FET are determined by using the extracted interface charge density in numerical simulations. The electron transport behavior of the monolayer MoS2 FET is modeled using the nonequilibrium Green’s function with mode space (NEGF_MS) approach. We study and compare the performance of monolayer MoS2 FETs on different substrates, viz. SiO2, HfSiO4, Si3N4, HfO2, and h-BN. The results reveal that the monolayer MoS2 FET on the h-BN/Si substrate exhibits an on-current of 548 μA/μm and a subthreshold swing of 65 mV/dec.
关键词： Carrier fluctuations,Electron transport,Charge density,NEGF_MS,Monolayer MoS2 FET
更新于2025-09-09 09:28:46
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[IEEE 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Austin, TX, USA (2018.9.24-2018.9.26)] 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Toward more realistic NEGF simulations of vertically stacked multiple SiNW FETs
摘要： We present quantum transport simulation results of vertically stacked multiple silicon nanowire (SiNW) FETs based on the non-equilibrium Green’s function (NEGF) method. In order to consider more realistic device conditions such as complex geometry of the multi-channel FETs and various carrier scattering processes, we improved physical models and numerical techniques for the NEGF simulations.
关键词： non-equilibrium Green’s function (NEGF),quantum transport,multiple nanowire FET
更新于2025-09-09 09:28:46
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[IEEE 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Shenzhen (2018.6.6-2018.6.8)] 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - The Design of High Performance Si/SiGe-Based Tunneling FET: Strategies and Solutions
摘要： The strategy and solutions in the design of tunneling FET for low voltage/power applications will be addressed in this paper. First, the concept of a face-tunneling scheme to provide a sufficient improvement over the conventional point tunneling has been justified by an experiment. By taking advantage of an area-tunneling, in comparison to conventional point-tunneling FET, face-tunneling FET (f-TFET) can be enhanced in its Ion current. This work shows Ion of f-TFET with one-order magnitude that of point-TFET(control), and the longer the gate length is, the higher the Ion becomes. However, from experimental results, S.S. of f-TFET is a little worse than that of control. This can be better improved by careful treatment of a special design epi-channel, Next, the TFET performance has been proposed by a further design of an improved epitaxial SiGe-based channel structure. The design is based on a raised-drain structure with further improvement on the Ion current and much lower S. S. down to 28mV/dec.
关键词： tunneling FET,raised-drain structure,face-tunneling,point-tunneling,SiGe-based channel,sub-threshold swing,Ion current
更新于2025-09-09 09:28:46
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Enhancement of a Nanoscale Novel Esaki Tunneling Diode Source TFET (ETDS-TFET) for Low-Voltage Operations
摘要： This paper presents a novel nanoscale tunnel FET consisting of an Esaki tunneling diode in the source region. A unique part of the source region is replaced by a heavily doped N-type silicon material establishing a tunneling diode inside the source region. Also, the gate metal is deliberately extended into the source region in order to more couple the created tunneling diode inside the source region. In the result of this new configuration, the band energy bending occurs inside the source region and also the potential barrier will be modified in the channel region thus increasing the ratio of ION to IOFF (ION/IOFF) and reducing the leakage current and ambipolar current for the proposed structure. The proposed structure has been compared with the conventional TFET and PNPN-TFET structure in terms of the ION/IOFF, Leakage current, ambipolar current, drain-source conductance, short channel effects, source-drain capacitance and minimum noise figure showing a performance superiority with respect to other structures under the study.
关键词： Tunnel FET,Band energy,Potential barrier,Esaki tunneling diode
更新于2025-09-04 15:30:14
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Static and Dynamic Piezopotential Modulation in Piezo-Electret Gated MoS <sub/>2</sub> Field-Effect Transistor
摘要： The piezotronic effect links the mechanical stimuli with various semiconductor devices, promising for low-power-consuming electronic devices, sensitive sensors and interactive control system. The persistent requirement for external strains in piezotronic modulation may hinder its application in some circumstances (such as devices on rigid substrate, or complicated synergistic piezoelectric modulation on multi-device). Here, we propose an efficient method to realize piezoelectric modulation of optical and electrical properties of MoS2 FET in both static and dynamic manner, expanding the application of piezotronics. Through capacitive coupling between piezo-electret and MoS2 FET, the remanent piezo-potential can efficiently tune the Fermi level of MoS2, programming the initial electrical property for subsequent fabrication of sophisticated devices. The external strain can induce enhanced piezo-potentials to further affect the energy band bending of MoS2 channel, giving rise to high performance strain sensors (large gauge factor ~4800, fast response time ~0.15s and good durability >1000 s). The proposed static and dynamic piezopotential tuned MoS2 FET is easy to extend to devices based on other materials, which is highly desired in tunable sensory systems, active flexible electronics, and human-machine interface.
关键词： piezo-electret,optical and electric properties,mechanical sensors,MoS2 FET,piezopotential modulation
更新于2025-09-04 15:30:14
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[IEEE 48th European Solid-State Device Research Conference (ESSDERC 2018) - Dresden (2018.9.3-2018.9.6)] 2018 48th European Solid-State Device Research Conference (ESSDERC) - Experimental extraction of BEOL composite equivalent thermal conductivities for application in self-heating simulations
摘要： Self-heating effects can seriously accelerate FEOL and BEOL degradation mechanisms. Moreover, as FET dimensions are continiously decreasing, the thermal resistance towards the Si bulk is increasing. As a result, the thermal properties of the BEOL become increasingly important. We develop dedicated test-structures and assess the equivalent thermal properties of the BEOL composite, which consists of Cu metallization and low-k interlayer dielectric (ILD). We study the impact of via density and configurations typical for those used in VLSI circuit designs. We can find through 3DFEM simulations, that equivalent anisotropic thermal properties can be provided for this composite, which can serve as calibrated parameters for FET thermal simulations.
关键词： BEOL,self-heating,thermal conductivity,FET,3DFEM simulations
更新于2025-09-04 15:30:14