- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
[IEEE 2020 International Conference on Computing, Networking and Communications (ICNC) - Big Island, HI, USA (2020.2.17-2020.2.20)] 2020 International Conference on Computing, Networking and Communications (ICNC) - On Performance of Multiuser Underwater Wireless Optical Communication Systems
摘要： This paper presents an apparatus and methodology for an advanced accelerated power cycling test of insulated-gate bipolar transistor (IGBT) modules. In this test, the accelerated power cycling test can be performed under more realistic electrical operating conditions with online wear-out monitoring of tested power IGBT module. The various realistic electrical operating conditions close to real three-phase converter applications can be achieved by the simple control method. Further, by the proposed concept of applying the temperature stress, it is possible to apply various magnitudes of temperature swing in a short cycle period and to change the temperature cycle period easily. Thanks to a short temperature cycle period, test results can be obtained in a reasonable test time. A detailed explanation of apparatus such as configuration and control methods for the different functions of accelerated power cycling test setup is given. Then, an improved in situ junction temperature estimation method using on-state collector–emitter voltage VC E O N and load current is proposed. In addition, a procedure of advanced accelerated power cycling test and test results with 600 V, 30 A transfer molded IGBT modules are presented in order to verify the validity and effectiveness of the proposed apparatus and methodology. Finally, physics-of-failure analysis of tested IGBT modules is provided.
关键词： power cycling test,physics-of-failure,Failure mechanism,lifetime model,insulated-gate bipolar transistor module,reliability
更新于2025-09-23 15:21:01
-
[IEEE 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) - Berlin, Germany (2019.6.23-2019.6.27)] 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) - Manipulation of Biomolecules Into Nanogap by Plasmonic Optical Excitation for Highly Sensitive Biosensing
摘要： This paper presents an apparatus and methodology for an advanced accelerated power cycling test of insulated-gate bipolar transistor (IGBT) modules. In this test, the accelerated power cycling test can be performed under more realistic electrical operating conditions with online wear-out monitoring of tested power IGBT module. The various realistic electrical operating conditions close to real three-phase converter applications can be achieved by the simple control method. Further, by the proposed concept of applying the temperature stress, it is possible to apply various magnitudes of temperature swing in a short cycle period and to change the temperature cycle period easily. Thanks to a short temperature cycle period, test results can be obtained in a reasonable test time. A detailed explanation of apparatus such as configuration and control methods for the different functions of accelerated power cycling test setup is given. Then, an improved in situ junction temperature estimation method using on-state collector–emitter voltage VC E O N and load current is proposed. In addition, a procedure of advanced accelerated power cycling test and test results with 600 V, 30 A transfer molded IGBT modules are presented in order to verify the validity and effectiveness of the proposed apparatus and methodology. Finally, physics-of-failure analysis of tested IGBT modules is provided.
关键词： insulated-gate bipolar transistor module,physics-of-failure,power cycling test,lifetime model,Failure mechanism,reliability
更新于2025-09-23 15:19:57
-
The roles of stress in the thermal shock failure of YSZ TBCs before and after laser remelting
摘要： In order to reveal the roles of stress in the thermal shock failure of thermal barrier coatings (TBCs), yttria-stabilised zirconia (YSZ) TBCs were prepared via atmospheric plasma spraying and then remelted by a laser remelting process. Subsequently, thermal cycling tests of the as-sprayed YSZ TBCs and remelted YSZ TBCs were carried out at 1100 °C. The thermal shock failure mechanism of the two TBCs was investigated comparatively from the perspective of stress, i.e., phase transformation stress of ceramic coating, growth stress and thermal mismatch stress generated by thermally grown oxide (TGO). The results showed that, compared with the as-sprayed YSZ TBCs, there was no m-ZrO2 in the remelted YSZ TBCs, which avoided the ceramic coating phase transformation stress produced by the transformation between m-ZrO2 and t-ZrO2 during thermal cycling. Therefore, the thermal shock failure mode of the as-sprayed YSZ TBCs was severe buckling driving delamination, while that of the remelted YSZ TBCs was slight edge delamination. In addition, the TGO growth stress and the thermal mismatch stress between the TGO and the bonding coating were reduced by the laser remelting treatment, leading to the spallation tendency of YSZ TBCs was decreased. Consequently, the remelted YSZ TBCs exhibited superior thermal shock resistance to the as-sprayed YSZ TBCs. Therefore, the phase transformation stress, growth stress and thermal mismatch stress determined the thermal shock failure mode and thermal shock life of these two YSZ TBCs.
关键词： Stress,Laser remelting,TGO,Thermal shock failure mechanism,TBCs
更新于2025-09-23 15:19:57
-
Comparative study on stability of boron doped diamond coated titanium and niobium electrodes
摘要： The service life of boron doped diamond (BDD) coated electrodes is closely related to the substrate material and preparation process of the BDD coatings. In this paper, the failure process of BDD coated titanium (Ti/BDD) and niobium (Nb/BDD) electrodes prepared by arc plasma chemical vapor deposition method was comparatively studied by accelerated life test. The results showed that the main failure mechanism of the two types of electrodes is delamination of the BDD coatings, accompanied by coatings’ corrosion. The delamination of BDD coatings from both the substrates showed an incubation period, with the Ti/BDD electrode having a much shorter incubation period and a higher coating delamination rate than its Nb/BDD counterpart. By comparing growth process of diamond coatings and corrosion behavior of carbides formed on both substrates, it is found that on a Ti substrate, diamond coating is more liable to incorporate pore like defects, and carbide layer formed beneath the diamond coating is more susceptible to corrosion in electrolysis solution. It is believed that these two factors would be responsible for short service life for Ti/BDD electrodes as compared with that for Nb/BDD electrodes.
关键词： BDD electrode,accelerated life test,carbide layer,failure mechanism
更新于2025-09-19 17:15:36
-
The Development of Accelerated Life Test Method of Multi-Layer Nano Thin Film Glass for Electric Automobiles
摘要： According to expansion of electric automobiles, the multi-layer nano thin film glass with heating source is researched to retain safety driving for winter. Generally, the tungsten wire is used as a heating source of electric automobile glass. Due to its low visibility, silver (Ag) particles are researched for years. Ag is widely used as a material of heater in the automobile industry since it has relatively high heat and electrical conductivities. However, the multi-layer nano thin film glass using Ag particles is under development stage and is not verified in the field, so recall and claim can be raised. In this study, we will find the potential failure mechanism of the multi-layer nano thin film glass based on the properties, and then suggest accelerated life test method to verify 15 years in the automobile application.
关键词： Electric automobiles,Multi-layer nano thin film glass,Accelerated life test,Windshield glass,Failure mechanism
更新于2025-09-19 17:15:36
-
Laser 3D printed bio-inspired impact resistant structure: failure mechanism under compressive loading
摘要： This work presents a comprehensive failure mechanism study of the bi-directionally corrugated (DCP) structures inspired by the telson of mantis shrimp. The DCP structures were fabricated by selective laser melting (SLM) with AlSi10Mg powder. The influence of key structural parameters, namely wave number (N), on the compressive behaviours, stress distribution, deformation modes and fracture mechanism of SLM-processed DCP components was systematically investigated. Results revealed that with the increase of wave number (N), the structural expansion effect became more obvious, which led to the disappearance of the plateau region on the compressive force-displacement curve, the decrease of specific energy absorption (SEA) growth rate and the energy absorption per periodicity cell. Three deformation modes were observed, namely full-folded mode (N = 4), transitional mode (N = 5), and global-buckling mode (N = 6). Finally, the fracture morphologies elucidated that the fracture mechanism changed from ductile fracture to brittle fracture with the increase of wave number.
关键词： bi-directionally corrugated panel,failure mechanism,selective laser melting,energy absorption,Bio-inspired
更新于2025-09-16 10:30:52
-
[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - New Short Circuit Failure Mechanism for 1.2kV 4H-SiC MOSFETs and JBSFETs
摘要： The short circuit (SC-SOA) capability of power devices is crucial for power systems. In this paper, 1.2 kV SiC MOSFETs and JBSFETs are characterized, and their SC-SOA behavior was tested and analyzed. Due to the lower saturated drain current, the JBSFETs were found to have superior SC-SOA compared with MOSFETs despite the integrated Schottky contact. A new short circuit failure mechanism related to melting of the top Al metallization is proposed based up on non-isothermal TCAD numerical simulations supported with SEM measurements of failed die using Energy Dispersive X-ray Spectroscopy (EDS) analysis.
关键词： JBSFET,Robustness,MOSFET,Reliability,Silicon Carbide,4H-SiC,Failure Mechanism,Short Circuit,Ruggedness
更新于2025-09-04 15:30:14