Photoelectric process in GaAs quantum dot

摘要： We study the photoelectric process in single electron charged spherical GaAs/Ga1-yAlyAs quantum dot. The effective mass approximation is used with the finite potential at the dot matrix interface including the effect of self-energy. The total cross section of photoelectric process is investigated with the variation of incident photon energy and the molar concentration y of Al in Ga1-yAlyAs matrix material.