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- Yeungnam University
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- Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW)
- Korea Institute of Energy Research (KIER)
- Normandie Univ, UNIROUEN, INSA Rouen
- Korea Institute of Science and Technology
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Performance of Graphenea??CdS Hybrid Nanocomposite Thin Film for Applications in Cu(In,Ga)Se2 Solar Cell and H2 Production
摘要： A graphene–cadmium sulfide (Gr–CdS) nanocomposite was prepared by a chemical solution method, and its material properties were characterized by several analysis techniques. The synthesized pure CdS nanoparticles (NPs) and Gr–CdS nanocomposites were confirmed to have a stoichiometric atomic ratio (Cd/S = 1:1). The Cd 3d and S 2p peaks of the Gr–CdS nanocomposite appeared at lower binding energies compared to those of the pure CdS NPs according to X‐ray photoelectron spectroscopy analyses. The formation of the Gr–CdS nanocomposite was also evidenced by the structural analysis using Raman spectroscopy and X‐ray diffraction. Transmission electron microscopy confirmed that CdS NPs were uniformly distributed on the graphene sheets. The absorption spectra of both the Gr–CdS nanocomposite and pure CdS NPs thin films showed an absorption edge at 550 nm related to the energy band gap of CdS (~2.42 eV). The Cu(In,Ga)Se2 thin film photovoltaic device with Gr–CdS nanocomposite buffer layer showed a higher electrical conversion efficiency than that with pure CdS NPs thin film buffer layer. In addition, the water splitting efficiency of the Gr–CdS nanocomposite was almost three times higher than that of pure CdS NPs.
关键词： cadmium sulfide,Gr–CdS,Cu(In, Ga)Se2,buffer layer,water splitting
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Electroreflectance studies of Zn(O,S) buffer layers in Cu(In,Ga)Se <sub/>2</sub> solar cells: Bandgap energies and secondary phases
摘要： Solution-grown Zn(O,S) buffer layers in Cu(In,Ga)Se2 (CIGS) solar cells are investigated by angle-resolved electroreflectance (ER) spectroscopy. We demonstrate that ER can be used directly to measure the bandgap energy of very thin Zn(O,S) buffer layers in the device. Furthermore, ER measurements on CIGS solar cells with different gallium concentrations before and after thermal annealing (TA) were conducted and show no significant influence of the gallium concentration and TA on the buffer’s bandgap energy, as determined in the range of 2.8 – 2.9 eV. Moreover, some ER spectra exhibit an additional contribution at 2.3 eV. This finding can be ascribed to a secondary phase at the interface between CIGS absorber and Zn(O,S) buffer layer.
关键词： S) buffer layers,Zn(O,Cu(In,Ga)Se2 solar cells,secondary phases,electroreflectance spectroscopy,bandgap energies
更新于2025-09-19 17:13:59
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Cu(In,Al)Se <sub/>2</sub> Photovoltaic Thin Film Solar Cell from Electrodeposited Stacked Metallic Layers
摘要： An improved technique for synthesis of Cu(In,Al)Se2 is demonstrated, associated with sequential electrodeposition of a stacked layer in the order of Cu/Al/In followed by annealing in selenium vapor. Many advantages such as adjustable constitutes composition, good polycrystalline structure, pure chalcopyrite phase, uniform and compact surface morphology are obtained compared to the film fabricated by conventional electrodeposition process. The film thickness and the concentration of each metal deposited were controlled by the flexibility parameters of deposition time. The influence of Al content on the crystal structure, surface morphology, photoelectrochemical performance, optical and electronic properties of the films were investigated. The crystal size decrease and the energy bandgap of Cu(In,Al)Se2 thin film increase gradually with the increasing Al were revealed. Impedance potential test reveals the manufactured Cu(In,Al)Se2 thin films are all p-type semiconductor and the carrier concentration increases with the Cu/(Al + In) and Al/(In + Al) ratio. Photoelectrochemical investigation of Cu(In,Al)Se2 films verified that a higher photocurrent was obtained with a relative lower Al content due to a narrower bandgap leading to lower-energy photon absorption and a lower carrier density and a larger grain size both benefiting the transfer of photogenerated carriers and decrease the recombination of charge carriers. The obtained optimum Cu(In,Al)Se2 thin film based solar cell has been theoretical modeling and simulated. A high PCE of 17.08% was gained implying its potential application in photovoltaic devices.
关键词： electrodeposition,photovoltaic,Cu(In,Al)Se2,chalcopyrite,thin film solar cell
更新于2025-09-19 17:13:59
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Analysis of Thermodynamic Properties of Cu(In,Ga)Se2 Thin-Film Solar Cells for Viable Space Application
摘要： The use of thin film solar cells for power generation when colonizing space stations is an interesting idea. Resisting harsh space environments and low power to mass ratio shows potential for the future application of thin film solar cell in future space application such as roll able solar blankets. Cu(In,Ga)Se2 thin film solar cell are analyzed to determine their viability in space focusing on two modular aspects of emissivity and buffer lays. Findings and calculations showed how temperature affects the efficiency of solar cells and it could also be found how increasing their emissivity with different kinds of coatings can offset the loss in efficiency. Through the study of buffers, it was found that lower band gaps reduce the quantum efficiency of a solar cell. Therefore, ZnS with an energy band gap of 3.5eV will have the least amount of spectral absorption of higher wavelengths.
关键词： emissivity,CdS,Cu(In,Ga)Se2,efficiency,temperature,buffers
更新于2025-09-16 10:30:52
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Solar Cells Based on Cu(In, Ga)Se2 Thin-Film Layers
摘要： This paper presents the results of experimental studies of spectral, dark current–voltage and light load characteristics of the selenide–copper–gallium–indium (Cu(In, Ga)Se2) solar cell. Тhe main fundamental parameters of the photoactive semiconductor layer Cu(In, Ga)Se2, such as the band gap, the resistivity of the layer, the equilibrium majority–carrier concentration, the lifetime and the product μ nτn of nonequilibrium minority carriers from the spectral, photoelectric and dark current–voltage characteristics are determined. Based on an analysis of the light-load current–voltage characteristics at various solar radiation powers (50–1000 W/m2), the main parameters of the p–n junction were determined, as well as the nonideality factor and the magnitude of the reverse diode saturation current; a photogeneration mechanism was established in the studied solar radiation range, which had the character of a diffusion mechanism, where carrier recombination in the photoactive layer did not have a significant effect. We found that in conditions of real solar lighting (Рrad = 50–1000 W/m2), the output parameters of the solar cell – short-circuit current, open circuit voltage, the maximum output power increases with Рrad. The fill factor (FF) of the light-current–voltage characteristics has a maximum at Рrad ≈ 200 W/m2, and an efficiency has a maximum value at Рrad ≈ 600 W/m2. The observed dependences of FF and efficiency are explained by the dependence of the series (Rser) and shunt (Rsh) resistance of a solar cell on Prad. To maintain the efficiency of a solar cell based on thin-film layers Cu(In, Ga)Se2, equally high in conditions of increased radiation, as well as in conditions of low solar radiation, it is necessary that Rser decreases and Rsh does not change with Prad.
关键词： photoactive thin film layer,series resistance,solar cell,Cu(In, Ga)Se2,fill factor,short circuit current,solar radiation power,light current–voltage characteristics,efficiency,open circuit voltage,shunt resistance
更新于2025-09-16 10:30:52
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Picosecond laser ablation and depth profile of Cu(In, Ga)Se2 thin film layer
摘要： Laser ablation based on picosecond laser was used to achieve the micro-analysis of Cu(In, Ga)Se2 (CIGS) thin film with the ablation crater diameter of 50 μm and the ablation crater central depth of 93 ± 13 nm. We achieved the depth profile of CIGS thin film with different laser shot number. The evolutions of spectral lines intensities of Ca from glass substrate and Ga and In from CIGS thin film layer, and intensity ratios of Ca/Ga and Ca/In could exhibit the change of the ablation volume, which could estimate the thin film thickness of single CIGS thin film layer. The average plasma temperature was calculated to be about 5243 ± 100 K, and the average electron density was calculated to be about 4.5×1016 cm?3. It is shown that our experimental setup is suitable to achieve a precise control and monitor the element compositions in each CIGS thin film layer in the research and in the production of CIGS solar cells.
关键词： Ablation morphology,Electron density,Cu(In, Ga)Se2 thin film,Picosecond laser induced breakdown spectroscopy,Plasma temperature
更新于2025-09-16 10:30:52
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Defect activation and annihilation in CIGS solar cells: an operando X-ray microscopy study
摘要： The efficiency of thin-film solar cells with a Cu(In1?xGax)Se2 absorber is limited by nanoscopic inhomogeneities and defects. Traditional characterization methods are challenged by the multi-scale evaluation of the performance at defects that are buried in the device structures. Multi-modal X-ray microscopy offers a unique tool-set to probe the performance in fully assembled solar cells, and to correlate the performance with composition down to the micro- and nanoscale. We applied this approach to the mapping of temperature-dependent recombination for Cu(In1?xGax)Se2 solar cells with different absorber grain sizes, evaluating the same areas from room temperature to 100 ?C. It was found that poor performing areas in the large-grain sample are correlated with a Cu-deficient phase, whereas defects in the small-grain sample are not correlated with the distribution of Cu. In both samples, classes of recombination sites were identified, where defects were activated or annihilated by temperature. More generally, the methodology of combined operando and in-situ X-ray microscopy was established at the physical limit of spatial resolution given by the device itself. As proof-of-principle, the measurement of nanoscopic current generation in a solar cell is demonstrated with applied bias voltage and bias light.
关键词： X-ray beam induced current (XBIC),solar cell,Multi-modal X-ray microscopy,X-ray fluorescence (XRF),Cu(In1?xGax)Se2 (CIGS),X-ray beam induced voltage (XBIV)
更新于2025-09-12 10:27:22
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Proton Irradiation on Cesium‐Fluoride‐Free and Cesium‐Fluoride‐Treated Cu(In,Ga)Se <sub/>2</sub> Solar Cells and Annealing Effects under Illumination
摘要： Several studies have been performed on proton irradiation onto alkali-metal untreated Cu(In,Ga)Se2 (CIGS) solar cells. However, there are almost no studies describing similar effects on alkali-treated CIGS solar cells. With this motivation, this work investigates proton irradiation and annealing effects under illumination on cesium-?uoride-free (CsF-free) and CsF-treated CIGS solar cells. Both CsF-free and CsF-treated CIGS solar cells degrade under proton irradiation. External quantum ef?ciency measurements show degradation in long wavelengths after the treatment. The experimental data are ?tted with a simulation, which show that proton-irradiated degradation is more severe at high ?uence. Capacitance–voltage measurements show a broadening of the depletion region after proton irradiation, which is due to the decreased net carrier concentration. It is proposed that proton irradiation at low ?uence generates shallow-type defects, whereas high-?uence protons generate deep defects. However, it is observed that room-temperature storage of the proton-irradiated solar cells causes partial recovery. Thermal annealing under illumination treatments is found to be bene?cial to the drastic recovery of the performance of solar cells irradiated at low ?uence. High-?uence proton-irradiated solar cells undergo minor recovery.
关键词： Cu(In,Ga)Se2 solar cells,cesium-?uoride,heat-light soaking,proton irradiation,annealing
更新于2025-09-11 14:15:04
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Reflective Back Contacts for Ultrathin Cu(In,Ga)Se2-Based Solar Cells
摘要： We report on the development of highly reflective back contacts (RBCs) made of multilayer stacks for ultrathin CIGS solar cells. Two architectures are compared: they are made of a silver mirror coated either with a single layer of In2O3:Sn (ITO) or with a bilayer of ZnO:Al/ITO. Due to the improvement of CIGS rear reflectance, both back contacts result in a significant external quantum efficiency enhancement, in agreement with optical simulations. However, solar cells fabricated with Ag/ITO back contacts exhibit a strong shunting behavior. The key role of the ZnO:Al layer to control the morphology of the top ITO layer and to avoid silver diffusion through the back contact is highlighted. For a 500-nm-thick CIGS layer, this optimized RBC leads to a best cell with a short-circuit current of 27.8 mA/cm2 (+2.2 mA/cm2 as compared to a Mo back contact) and a 12.2%-efficiency (+2.5% absolute).
关键词： photovoltaic cells,reflective back contacts,ultrathin Cu(In,Ga)Se2,In2O3:Sn
更新于2025-09-11 14:15:04
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Engineering CIGS grains qualities to achieve high efficiency in ultrathin Cu(In Ga1?)Se2 solar cells with a single-gradient band gap profile
摘要： Reducing the Cu(InxGa1?x)Se2 (CIGS) thickness is an effective way to reduce the material use and increase manufacturing throughput. However, it is still a challenge to obtain high efficiency in the ultrathin CIGS solar cell. Here, the CIGS solar cell with a 1.3 μm-thickness-CIGS was synthesized via a three-stage co-evaporation method. The obtained CIGS solar cells were characterized by capacitance-voltage, capacitance-frequency, secondary ion mass spectrometry, X-ray fluorescence, transmission electron microscope, and electron beam induced current techniques. By optimizing the grain size, interface quality, and the Ga gradient in the ultrathin CIGS solar cell, the highest efficiency reached to 11.72% without any light trapping and anti-reflecting coating techniques. Compared with the typical CIGS solar cell with a thickness of 2.3 μm, the ultrathin CIGS solar cell showed a higher open-circuit voltage due to formation a back electrical field. The grain boundaries were found to be beneficial to the carrier’s separation and transport. The ultrathin CIGS solar cell had good ability to resist ion bombardment, suggesting its potential application in the space devices. Our results provide a strategy to achieve high-efficiency ultrathin CIGS solar cells.
关键词： High interface quality,Cu(InxGa1?x)Se2 solar cells,Heavy ion bombardment,Ultrathin
更新于2025-09-11 14:15:04