- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
High-detectivity infrared photodetector based on InAs submonolayer quantum dots grown on GaAs(001) with a 2?×?4 surface reconstruction
摘要： The submonolayer quantum dots of an infrared photodetector were grown by molecular beam epitaxy in the presence of a very low As ?ux and a 2 × 4 surface reconstruction in order to e?ectively nucleate small two-dimensional InAs islands that are required to form such nano-structures. A speci?c detectivity of 9.2 × 1010 cm Hz1/2 W?1 was obtained at 10 K with a bias of 1.0 V.
关键词： InAs submonolayer quantum dots,2 × 4 surface reconstruction,molecular beam epitaxy,infrared photodetector,GaAs(001)
更新于2025-09-12 10:27:22
-
Temperature-dependent interface stability of MoO <sub/>3</sub> /GaAs(001) hybrid structures
摘要： We report on the influence of growth temperature and post-growth annealing on interface formation and film structure of thin MoO3 films on GaAs(001), which plays an important role for a future application as carrier-selective contacts or diffusion barriers in III/V-semiconductor spin- and opto-electronics or photovoltaics. Growth and post-growth annealing were performed in a manner that emulates heterostructure growth and lithographic processing. High-resolution transmission electron microscopy reveals nanocrystalline (“amorphous”) growth at temperatures up to 200 °C and a transition to polycrystalline growth at about 400 °C. Spatially resolved chemical analysis by energy dispersive x-ray spectroscopy reveals strong intermixing at the MoO3/GaAs(001) interface proceeding during both film deposition and annealing. Our results evidence the important role of intermixing occurring during the process of interface formation at the very beginning of deposition.
关键词： intermixing,temperature-dependent,interface stability,GaAs(001),diffusion barriers,MoO3,carrier-selective contacts
更新于2025-09-10 09:29:36