- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Hard X-ray photoelectron spectroscopy investigation of annealing effects on buried oxide in GaAs/Si junctions by surface-activated bonding
摘要： Hard X-ray photoelectron spectroscopy measurements are performed on ≈10-nm-thick GaAs film/Si substrate junctions fabricated by the surface activated bonding and selective wet etching. The chemical shifts of Ga-O and As-O signals in Ga 2p3/2 and As 2p3/2 core spectra indicate that oxides are formed in a part of GaAs films neighboring GaAs/Si interfaces due to the surface activation process. Analyses of Ga-O and As-O signals show that the thickness of such buried oxides is decreased due to a post-bonding annealing at temperatures up to 400 °C. This means that the electrical properties of bonding interfaces, which are in the meta-stable states, are improved by the annealing. The thickness of oxides is different from that of amorphous-like transition layers at the GaAs/Si interfaces observed by transmission electron microscopy.
关键词： Buried interface,Surface activated bonding,GaAs/Si,HAXPES
更新于2025-09-23 15:23:52
-
Effects of post bonding annealing on GaAs//Si bonding interfaces and its application for sacrificial-layer-etching based multijunction solar cells
摘要： By using the sacrificial layer (SL) etching, GaAs substrates are separated from III–V epi substrate//Si substrate junctions that are made by surface activated bonding (SAB) technologies. The post-bonding low-temperature (300-?C) annealing plays an essential role in achieving a promising (～90%) bonding yield. The effects of the post-bonding annealing are investigated by hard X-ray photoemission spectroscopy and current–voltage measurements of GaAs//Si bonding interfaces. It is found that the concentration of oxygen atoms at interfaces is reduced and the resistance decreases to 1.6–2.1 m??cm2 by the low-temperature annealing. Aluminum fluoride complexes are not observed by X-ray photoelectron spectroscopy on the exposed surfaces of separated GaAs substrates. The roughness average of the surfaces is ≈0.25–0.30 nm. The characteristics of double junction cells fabricated on the GaAs//Si junctions prepared by the SL etching are almost the same as those of cells fabricated by dissolving GaAs substrates after bonding. These results indicate that multijunction cells could be fabricated in a process sequence compatible with reuse of GaAs substrates by combining the SL etching and SAB.
关键词： Sacrificial layer etching,GaAs//Si double junction cells,Surface activated bonding,Low temperature annealing,Epitaxial lift-off
更新于2025-09-23 15:19:57
-
[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - GaAs Grown on Si (111) by inserting metal selenides films
摘要： In this study, the crystalline improvement of GaAs grown on metal (Ga or In) selenides films is studied. We have found that the inevitable bonding between Ga and Se on the top of In2Se3 was observed. Further, the wettability of GaAs nucleus has been improved by irradiating Ga2Se3 surface with As, Ga, and Se simultaneously. The twin-domain less than 2% for 1 μm-GaAs grown on an In2Se3/Si (111)4o off-cut to [11-2] has been achieved by introducing Ga2Se3 on In2Se3 with the subsequent (As-Ga-Se) treatment.
关键词： GaAs/Si,metal selenides,Twin
更新于2025-09-19 17:13:59