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Investigation of the incident light intensity effect on the internal electric fields of GaAs single junction solar cell using bright electroreflectance spectroscopy
摘要： The incident light intensity (Iex) effects on a GaAs single junction solar cell (SC) was investigated using bright electroreflectance spectroscopy (BER) and current-voltage (J-V) measurements at room temperature. The p-n junction electric field (Fpn) of the SC was evaluated by analyzing the Franz Keyldesh oscillation (FKO) in the BER spectra. The Iex effect on Fpn was investigated at various incident light intensities from 0.03 to 25 suns. The Fpn decreased gradually with increasing Iex due to the photovoltaic effect. For the forward bias voltage, some part of the electrons and holes drifted to the p and n sides, respectively, and produced the induced electric field in the same direction of the Fpn. Therefore, the Fpn increased up to 2.5 suns. At more than 2.5 suns, most of the electrons and holes moved to the n and p sides and decreased the Fpn due to the photovoltaic effect. In addition, the Fpn was examined under light illumination as a function of different DC bias voltages (-0.2 ~ 0.4 V). The Fpn decreased with increasing bias voltage due to the decrease in potential barrier. The Fpn increased with increasing bias voltage due to the decrease in the photogenerated carrier-induced electric field for high Iex.
关键词： GaAs solar cell,Bright electroreflectance spectroscopy,Electric field
更新于2025-09-19 17:13:59
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Enhancing Photovoltaic Performance of GaAs Single-Junction Solar Cells by Applying a Spectral Conversion Layer Containing Eu-Doped and Yb/Er-Doped Phosphors
摘要： In this study, we examined e?orts to increase the photovoltaic performance of GaAs single-junction solar cells using spectral conversion layers, respectively, composed of europium-doped (Eu-doped) phosphors, ytterbium/erbium-doped (Yb/Er-doped) phosphors, and a combination of Eu-doped and Yb/Er-doped phosphors. Spin-on ?lm deposition was used to apply the conversion layers, all of which had a total phosphor concentration of 3 wt%. The chemical compositions of the phosphors were examined by energy-dispersive X-ray spectroscopy. The ?uorescence emissions of the phosphors were con?rmed by using photoluminescence measurements. Under laser diode excitation at 405 nm, we observed green luminescent downshift (LDS) emissions by Eu-doped phosphors at wavelengths of 479 nm to 557 nm, and under excitation at 980 nm, we observed red up-conversion (UC) emissions by Yb/Er-doped phosphors at wavelengths of 647 nm to 672 nm. The spectral conversion layers were characterized in terms of optical re?ectance, external quantum e?ciency, and photovoltaic current and voltage under AM 1.5 G simulations. The conversion e?ciency of the cell combining Eu-doped and Yb/Er-doped phosphors (23.84%) exceeded that of the cell coated with Yb/Er-doped phosphors (23.72%), the cell coated with Eu-doped phosphors (23.19%), and the cell coated without phosphors (22.91%).
关键词： ytterbium/erbium-doped (Yb/Er-doped),europium-doped (Eu-doped),up-conversion,phosphors,GaAs solar cell,luminescent downshift
更新于2025-09-16 10:30:52
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AlGaAs/GaAs solar cell with CNT transport layer: numerical simulation
摘要： AlGaAs/GaAs solar cells (SC) was modeled. Conventional SC was compared with structure with the thinner emitter. SC with additional CNT transport layer was simulated and compared with SC without it. The simulation was carried out with different geometry of the contacts and light flux. CNT transport layer has allowed achieving an increase in SCs efficiency up to 1.7% compared with metal contact grid.
关键词： CNT transport layer,numerical simulation,AlGaAs/GaAs solar cell
更新于2025-09-16 10:30:52
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Numerical Simulation of GaAs Solar Cell Aging Under Electron and Proton Irradiation
摘要： Though gallium arsenide (GaAs) solar cells are proven to be relatively stable in space working conditions, they are prone to the effects of aging, which deteriorate their characteristics. The lifetime of solar cells is restricted by the degree of radiation damage that they receive. This important factor affects the performance of solar cells in practical applications. The aim of this article is to investigate by numerical simulation on the influence of aging on the main characteristics of GaAs solar cells in the space. Degradations of the electrical characteristics are simulated for over a period of 15 years. The atmosphere (AM0) conversion efficiency decreases with time from 19.08% for the unirradiated cells to 10.38% in 15 years of the mission in space. Even with low doses of particle irradiation, the performance is significantly reduced subsequent to usage over the period of 15 years of the mission in space. Numerical simulation results also reveal that the short-circuit current, the open-circuit voltage, and the conversion efficiency decline gradually with time. Moreover, the calculated evolutions are in good agreement with the measured behaviors of GaAs-based solar cells embedded in geostationary satellites during the Navigation Technology Satellite 2 (NTS-2), the Engineering Test Satellite V (ETS-V), and the NAVigation Satellite Timing And Ranging (NAVSTAR) missions, which substantiate the introduced aging law accounting for both the cumulated doses of particles and the different electron and hole traps in the structure.
关键词： space application,model,Degradation,gallium arsenide (GaAs) solar cell
更新于2025-09-12 10:27:22
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[IEEE 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) - Sao Paulo, Brazil (2019.8.26-2019.8.30)] 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) - High-Efficiency GaAs Solar Cell Optimization by Theoretical Simulation
摘要： Theoretical simulations of solar cell current-voltage characteristics provide important information for a better design of the device structure, such as layers thicknesses and doping levels, in order to obtain high photovoltaic conversion efficiency. The inclusion of precise material parameters is critical to obtain reliable results and detailed understanding of the simulated device operation. In this study, GaAs solar cell structures were simulated by drift-diffusion model with SCAPS-1D in order to optimize the performance under 1 sun illumination. Moreover, we used the published results of some devices as references to infer their structures, as the details are normally not completely disclosed by the authors. To do so, an optimization study was required to probe different materials, thicknesses and doping levels for the layers. With the inferred structure, it was possible to evaluate the possibility of improvements through variation of the structure parameters to achieve even higher efficiencies.
关键词： Theoretical Simulation,Optimization,GaAs Solar Cell,SCAPS-1D
更新于2025-09-12 10:27:22
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Impact of Proton and Electron Irradiation-Induced Defects on the Dark Current of GaAs Solar Cells
摘要： The same amount of non-ionizing energy is deposited in GaAs solar cells through 1 MeV proton and electron radiation at specific fluence values. The defects created are detected and characterized via temperature-dependent dark I–V analysis, and the energy levels are correlated to trap states observed via admittance spectroscopy. A remarkable difference is observed between the defect energy levels introduced in the proton and electron cases: in the former, the recombination centers lie around the mid-gap position, while in the latter they are spread over a wider energy range in the band-gap. This induces a profound difference in the degradation of the recombination current in the space-charge region. On the other hand, the degradation of the diffusion current in the neutral regions is found to be determined by the recombination velocities at the back and front hetero-interfaces of the solar cell. They depend only on the displacement damage dose and are independent of the particle type.
关键词： recombination current,semiconductor device modeling,surface recombination,Displacement damage,irradiation-induced defect,GaAs solar cell
更新于2025-09-12 10:27:22
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Thermal-stress distribution and damage characteristics of three-junction GaAs solar cell irradiated by continuous laser beam
摘要： According to the theory of Fourier heat transfer and thermal stress field, a model on thermal damage of three-junction GaAs solar cell is established. The temperature and thermal-stress distribution inside the solar cell, which irradiated by continuous laser, are calculated. Results show that the temperature and thermal-stress distribution are corresponded to the intensity distribution of the incident laser beam. The maximum values of the compressive and tensile stress increase with the increasing of the power density and waist radius of the incident laser. When the waist radius is 0.5 cm, the melting damage is the main damage pattern as the power density is below about 40 W/cm2. However, when the laser power density is higher the stress damage will change to the main damage form. As the waist radius increases, the change in damage processes will also occur at lower laser power density.
关键词： Three-junction GaAs solar cell,Thermal-stress,Continuous laser beam,Damage
更新于2025-09-12 10:27:22
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200 mW-class LED-based optical wireless power transmission for compact IoT
摘要： For Internet of Things terminals such as many types of sensors, tags or beacons, wiring and using batteries are less effective power supplying methods due to excessive installation and maintenance costs. Wireless power transmission is a promising candidate, particularly optical wireless power transmission (OWPT), with its attractive advantages of long transmission distance, good directionality and small size. However, previous researches of OWPT are almost all focused on laser as a light source, which is difficult to use in the usual spaces due to possible safety reasons at the current stage. In this research, an LED-based OWPT system that realized large electricity power supply was designed and demonstrated. 223.9 mW of output power from 100 cm distance was achieved with a 1.7 × 1.7 cm2 size GaAs solar cell as a receiver. Around 77% of optical system efficiency was confirmed at a 2.1 × 2.3 cm2 irradiation size. The total power feeding efficiency was 6.3%.
关键词： optical wireless power transmission,IoT,LED,GaAs solar cell,wireless power transmission
更新于2025-09-11 14:15:04