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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Hybrid III-V/SiGe solar cells on Si substrates and porous Si substrates
摘要： A tandem GaAsP/SiGe solar cell has been developed employing group-IV reverse buffer layers grown on silicon substrates with a subsurface porous layer. Reverse buffer layers facilitate a reduction in the threading dislocation density with limited thicknesses, but ease the appearance of cracks, as observed in previous designs grown on regular Si substrates. In this new design, a porous silicon layer has been incorporated close to the substrate surface. The ductility of this layer helps repress the propagation of cracks, diminishing the problems of low shunt resistance and thus improving solar cell performance. The first results of this new architecture are presented here.
关键词： tandem on silicon,porous silicon,reverse buffer layers,III-V on silicon,GaAsP/SiGe
更新于2025-09-23 15:21:01
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Self-catalyzed GaAs(P) nanowires and their application for solar cells
摘要： Nanowires (NWs) are far superior to traditional thin-film counterparts in making high-efficiency low-cost solar cells (SCs) due to their advanced properties, such as reduced light reflection, strong light trapping, increased defect tolerance, and compatibility with Si substrates. This allows us to greatly reduce the quantity of required material and lessen demands on its quality to achieve sufficient light absorption, leading to substantial cost reduction. Self-catalysed III–V NWs are being widely used for SCs, especially GaAs(P) NWs. However, the special growth mode makes the SC design extremely complex and the existing theories cannot be used directly for guidance. Here, we review the recent breakthroughs and remaining challenges in growing and making self-catalysed NW SCs, with special attention given, but not limited, to GaAs(P) NWs.
关键词： nanowires,self-catalysed nanowires,GaAsP,solar cells
更新于2025-09-23 15:19:57
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High Pressure affects on Optical Characteristics of AlGaAs/GaAsP/AlGaAs nano-heterostructure
摘要： A N U S C RIP T n-Al0.45Ga0.55As/GaAs0.84P0.16/p-Al0.45Ga0.55As nano-scale hetrostructure under the external pressures applied along [001] and [100] directions. In order to find the carriers wavefunctions, their localizations and sub-band dispersions in the heterostrcuture, a 6 × 6 K –L Hamiltonian was solved. In addition, the optical and momentum matrix elements were also calculated followed by the calculation of TE and TM optical gain under the applied pressure along [001] and [100] directions. According to the quantitative analysis of the simulated results, it can be suggested that the application of external pressure along [001] direction within TE mode is one of the preferable approaches for the efficient improvement in the gain characteristics of the n-Al0.45Ga0.55As/GaAs0.84P0.16/p-Al0.45Ga0.55As nano-scale hetrostructure based laser performance in the NIR (near ifrared region).
关键词： Pressure,Heterostructures,AlGaAs,GaAsP,Optical gain,Type-I
更新于2025-09-04 15:30:14