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The Effect of Inductively Coupled Plasma Etching on the I–V Curves of the APD with GaN/AlN Periodically‐Stacked‐STRUCTURE
摘要： Inductively Coupled Plasma (ICP) is widely used in dry etching of III-nitride materials, wherein the etching parameters of GaN and AlN are very different. In this paper, the ICP dry etching process parameters of GaN/AlN periodically-stacked-structure (PSS) for avalanche photodiode fabrication have been intensively studied and optimized. The flow rate ratio of Cl2/BCl3/Ar plasma, bias voltage, and the GaN-to-SiNx selectivity of ICP etching were optimized to achieve excellent surface morphology and nearly vertical sidewalls. It was found that the etching rate and the etched surface roughness of GaN/AlN material were significantly influenced by the flow rate of Cl2. After optimizing the etching procedure, the root-mean-square roughness (RMS) of the etched surface was measured to be 1.46 nm, which is close to the as grown surface. By employing the optimized ICP dry etching in the fabrication of the GaN/AlN PSS avalanche photodiode (APD), the dark current was suppressed from 3.6 A/cm2 to 8.2×10-3 A/cm2 at -90 V.
关键词： GaN/AlN,dark current,molecular beam epitaxy,inductively coupled plasma,avalanche photodiode
更新于2025-09-12 10:27:22
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High-efficiency electron-beam-pumped sub-240-nm ultraviolet emitters based on ultra-thin GaN/AlN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy on <i>c</i> -Al <sub/>2</sub> O <sub/>3</sub>
摘要： We report the internal structures and emission properties of GaN/AlN single- and multiple-quantum-well (QW) heterostructures with well widths of dw = 1–4 monolayers (MLs), grown by plasma-assisted molecular-beam epitaxy on c-sapphire at metal-rich conditions and low temperatures (>700 °C). The formation of plane QWs with abrupt symmetrical interfaces is con?rmed by both scanning transmission electron microscopy and X-ray di?raction analysis. Pulse-scanning and continuous-wave output powers of 150 and 28 mW, respectively, at a peak emission wavelength of 235 nm were achieved at 300 K in an electron-beam-pumped deep-ultraviolet (1.5 ML-GaN/5.5 nm-AlN)360 multiple-QW emitter with a maximum e?ciency of 0.75%.
关键词： plasma-assisted molecular-beam epitaxy,electron-beam-pumped,deep-ultraviolet emitters,GaN/AlN,quantum wells
更新于2025-09-04 15:30:14