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The effects of thermal annealing on the structural and electrical properties of Zinc Tin oxide thin films for transparent conducting electrode applications
摘要： The as-deposited and annealed Zinc tin oxide (Zn2SnO4) thin films were deposited by electron beam evaporation technique and were characterized for the structural, optical and electrical properties. The x-ray diffraction technique revealed the amorphous nature of as-deposited thin film while the films annealed at 400, 500 and 6000C in air were found to be polycrystalline. The phase change from amorphous to crystalline Zn2SnO4 results in the higher resistance as revealed by resistance versus temperature measurements. From the Hall Effect, the as deposited film shows the electron mobility and carrier concentrations (electron) equal to 33cm2/V.s and 8.361x 1017cm-3 respectively. The agglomeration of grains in annealed thin films are observed by Atomic Force Microscopy (AFM) technique.The peaks in Optical transmission spectra, observed by using the UV-Vis spectroscopy confirm the creation of sub levels between conduction band minimum and valence band maximum after annealing. The band gaps calculated by Tauc plot explore the possibility of shifting the Fermi level towards valence band maximum after thermal annealing.
关键词： Annealing temperature,Zn2SnO4,Band gap,Oxygen vacancies,Electron beam evaporation,TCOs
更新于2025-09-23 15:22:29
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Effect of Magnesium on Structural and Optical Properties of CaTiO3: A DFT Study
摘要： The electronic bandstructure, optical and structural properties of pure and Mg-doped CaTiO3 are calculated by using first-principle calculation which is based on the density functional theory. The effect of Mg-dopant on the properties of CaTiO3 perovskite explored by using ultra soft pseudo-potential (USP) and generalized gradient approximation (GGA). The incorporation of Mg at Ca site affected the electronic band structure of CaTiO3 meaningfully by introducing new gamma point. The incorporation of Mg increases the band gap from 1.84 eV to 1.92 eV. The partial density of states of pure CaTiO3 changed after doping cleared the effect of dopant on pure system. Optical properties of both the systems are examined which reveals that the absorption edge shifting from 2.1 eV to 2.5 eV indicates a blue shift whereas the refractive index also increases from 2 to 2.4 after doping. Thus Mg-doped CaTiO3 not only affect the optical properties of the system but also make it and appealing candidate for optical devices.
关键词： Refractive index,Doping,Density of states,Oxide Based Perovskite,Optical Properties,Band Gap
更新于2025-09-23 15:22:29
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Silicon-compatible fabrication of inverse woodpile photonic crystals with a complete band gap
摘要： Three-dimensional (3D) photonic crystals can provide access to very interesting and unique properties for ultimate control and manipulation of photons, not possible otherwise. However, widespread implementation of such photonic crystals remains elusive because the fabrication technology available today has either silicon (Si) incompatibility, poor scalability, a large number of undesired defects, challenging or impossible placement of intentional defects, or has advanced non-standard process steps available only in a few laboratories. In this work, a new methodology of fabricating 3D photonic crystals free of unintentional defects is developed. This methodology is 'truly' Si-compatible and uses techniques available in any standard fabrication facility. A broadband omnidirectional reflector on Si is demonstrated using the same method. Introduction of intentional defect sites for fabrication of 3D waveguides and optical cavities is also discussed.
关键词： Photonic Crystal,Woodpile,Broadband reflector,Band gap,Empty-space-in-Silicon
更新于2025-09-23 15:22:29
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A novel proposal for all-optical compact and fast XOR/XNOR gate based on photonic crystal
摘要： In this paper, we aim to design an all-optical device, which can perform XOR and XNOR functions in a single structure. The proposed structure will be realized by cascading two nonlinear resonant rings. The functionality of the proposed structure is based on controlling the optical behaviour of optical rings via optical intensity. The final structure has one bias and two input control ports, along with two output ports. One port acts as an XOR and the other acts as an XNOR gate. The maximum delay times for the XOR and XNOR gates are 1.5 and 2.5 ps, respectively. Therefore, the working bit rates for the XOR and XNOR gates are 666 and 400 Gbit/s, respectively.
关键词： band gap,Photonic crystal,XOR/XNOR gate,Kerr effect
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE 13th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) - Singapore, Singapore (2018.4.22-2018.4.26)] 2018 IEEE 13th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) - A Pyroelectric Infrared Detector By Integrating LiTaO<inf>3</inf> Single Crystal with Grooved Quartz Using UV Adhesive
摘要： A new pyroelectric infrared detector structure has been fabricated by integrating LiTaO3 single crystal with air gap thermal insulation structure using MEMS technology. The device shows excellent pyroelectric properties and thermal performance. Results demonstrate that the pyroelectric performance of detectors with air gap thermal insulation structure can be improved by the area of air gap. It was demonstrated that if the area of air gap got increased, the thermal time constant of LiTaO3 bulk would be more well-distributed and the pyroelectric performance of detector would be improved.
关键词： air gap,MEMS,pyroelectric infrared detector,thermal insulation,LiTaO3
更新于2025-09-23 15:22:29
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Decreased Energy Gap and Enhanced Conductivity in Zn-Doped Sr2IrO4
摘要： The 5d transition metal oxide Sr2IrO4 has attracted much interest in the high-temperature superconductivity community since it highly resembles the cuprate superconductor in crystal and electronic structures. Here, we report on the transport and magnetic properties of Zn-doped Sr2IrO4. It is found that the energy gap of Sr2IrO4 is rapidly decreased with a small amount of Zn doping. Consequently, the electrical conductivity is significantly enhanced. The present work could serve as the prerequisite stage in exploring the possible superconductivity of the Sr2IrO4 compound.
关键词： Energy gap,Magnetic moment,Sr2IrO4
更新于2025-09-23 15:22:29
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AIP Conference Proceedings [AIP Publishing LLC NANOFORUM 2014 - Rome, Italy (22–25 September 2014)] - Structural and optical properties of Sn1-xMnxO2 thin films
摘要： Sn1-xMnxO2 thin films are deposited by spray pyrolysis method. XRD of all the thin films show the amorphous nature. Synthesis of SnO2 is also confirmed by FTIR spectroscopy. Undoped SnO2 thin film is 60-70 % transparent in visible and near IR region and it increases up to80-90% for 20 at. % Mn doped SnO2 thin film. The optical band gap is tunable linearly between 3.34 to 3.96 eV for 0≤x≤0.20 for Sn1-xMnxO2 amorphous thin films.
关键词： and FTIR,Thin Films,Band Gap,Optical Transmission
更新于2025-09-23 15:22:29
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The influence of yttrium-ions on the optical and electrical behavior of PVA polymeric films
摘要： The polyvinyl alcohol (PVA) films doped with various wt% of yttrium nitrate salt were synthesized by standard solution casting technique in order to examine the functional electrical and optical properties. The degree of the crystalline structure that evaluated in the films were investigated by x-ray diffraction and Fourier transform infrared spectroscopy measurements. In addition, the surface images have been obtained via scanning electron microscopy (SEM). The optical parameters have been calculated from UV–visible-NIR transmittance spectroscopy. Also, the dielectric constant measurement and the DC resistance that are arisen in the PVA films with different wt% of Y3+ have been done. All the samples show semi-crystalline phases. The average size, of the cluster Y3+ in the SEM images, increase to 1.63 μm for PVA/37 wt% Y3+ sample. Therefore, the optical absorption of this sample is higher than the others. The value of the energy gap decrease from 5.11 eV to 4.47 eV for PVA/0.037 wt% Y3+ and PVA/37 wt% Y3+ samples, respectively. The nonlinear current—voltage behavior, at high applied voltage, of the polymeric films, is observed with different values of slope, which is a characteristic of the varistor materials. So, these films could be used in different applications like optoelectronic and varistor devices.
关键词： Varistor,Dielectric,XRD/FTIR,SEM,Optical energy gap,Y3+-doped PVA
更新于2025-09-23 15:22:29
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Effect of Ag incorporation on structural and opto-electric properties of pyrolized CdO thin films
摘要： We have investigated the structure, morphology and opto-electric properties of CdO and Ag-incorporated CdO thin films prepared by chemical spray pyrolysis (CSP) method. The X-ray diffraction (GIXRD) study confirms that CdO samples are highly polycrystalline with cubic structure. The AFM study shows smooth surfaces both for CdO and Ag-CdO thin films. The direct band gap energy varies from 2.25 to 2.50 eV depending on Ag content in the films. Urbach energy reversal in optical band gap indicates that several localized states are present above Fermi level or near at the conduction band. The optical properties, such as refractive index, optical conductivity and nonlinear optical susceptibility, are found dependent on Ag content. A combined effect on the transport properties has been observed with the incorporation of Ag in CdO. The metal-like electric conduction of CdO film has been removed up to a temperature Tc for Ag doping. The n-type carrier concentration of CdO is reduced with increasing Ag content and the concentration is of the order of ~ 1020 cm?3.
关键词： Band gap,Activation energy,Thin films,XRD,Urbach tail
更新于2025-09-23 15:21:21
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Effect of annealing on the physical properties of thermally evaporated In2S3 thin films
摘要： The structural, compositional, morphological and optical properties of In2S3 thin films, prepared by thermal evaporation technique and annealed in sulfur ambient at different temperatures have been investigated. The grazing incident X-ray diffraction patterns have indicated polycrystalline form and predominantly cubic structure of annealed In2S3 films. The scanning electron microscopy revealed textured surface with uniformly distributed grains and the grain size increased with increase of annealing temperature. The optical parameters of the films have been determined using conventional transmission and reflection spectra as well as from surface photovoltage measurements.
关键词： Surface photovoltage,Annealing,In2S3 thin films,Structure,Optical band gap
更新于2025-09-23 15:21:21