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Reconfigurable 2D/0D pa??n Graphene/HgTe Nanocrystal Heterostructure for Infrared Detection
摘要： Nanocrystals are promising building blocks for the development of low-cost infrared optoelectronics. Gating a nanocrystal film in a phototransistor geometry is commonly proposed as a strategy to tune the signal-to-noise ratio by carefully controlling the carrier density within the semiconductor. However, the performance improvement has so far been quite marginal. With metallic electrodes, the gate dependence of the photocurrent follows the gate-induced change of the dark current. Graphene presents key advantages: (i) infrared transparency that allows back-side illumination, (ii) vertical electric field transparency, and (iii) carrier selectivity under gate bias. Here, we investigate a configuration of 2D/0D infrared photodetectors taking advantage of a high capacitance ionic glass gate, large-scale graphene electrodes, and a HgTe nanocrystals layer of high carrier mobility. The introduction of graphene electrodes combined with ionic glass enables one to reconfigure selectively the HgTe nanocrystals and the graphene electrodes between electron-doped (n) and hole-doped (p) states. We unveil that this functionality enables the design a 2D/0D p?n junction that expands throughout the device, with a built-in electric field that assists charge dissociation. We demonstrate that, in this specific configuration, the signal-to-noise ratio for infrared photodetection can be enhanced by 2 orders of magnitude, and that photovoltaic operation can be achieved. The detectivity now reaches 109 Jones, whereas the device only absorbs 8% of the incident light. Additionally, the time response of the device is fast (<10 μs), which strongly contrasts with the slow response commonly observed for 2D/0D mixed-dimensional heterostructures, where larger photoconduction gains come at the cost of slower response.
关键词： gate-induced diode,infrared detection,narrow band gap nanocrystals,HgTe,graphene
更新于2025-09-23 15:21:01
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Groove Gap Waveguide Filter Based on Horizontally Polarized Resonators for V-Band Applications
摘要： In this article, resonators based on air-?lled rectangular cavity consisting of one perfect magnetic conductor (PMC) wall and the rest of walls as the perfect electric conductor (PEC) are proposed. The proposed cavity can be engraved in the top or bottom metal plate of a gap waveguide structure, and the PMC wall is realized by the periodic metallic pins located within the gap waveguide geometry. The resonant frequency and electromagnetic (EM) ?eld distribution of the cavity are investigated, and it is shown that the electric ?eld is horizontally polarized with respect to the wave propagation direction. Two bandpass ?lters are designed by inserting the proposed cavity in the cutoff region of the gap waveguide, on the top and bottom plates. In the latter case, all pins are the same, and the cavities and coupling structure are easily implemented by engraving the top plate. Therefore, by using this concept, a common pin plate can be used to implement different passive millimeter-wave devices. For instance, three different ?lters working at 60, 65, and 70 GHz with a common bottom pin plate are designed and fabricated. The measured results show a minimum insertion loss of 1.4, 1.1, and 1.1 dB with 0.83%, 1.4%, and 1.8% fractional bandwidth for the three bandpass ?lter designs, respectively, with aluminum as metal.
关键词： perfect magnetic conductor (PMC),Antenna system,millimeter-wave ?lter,gap waveguide
更新于2025-09-23 15:21:01
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Predicted CsSi Compound: A Promising Material for Photovoltaic Applications
摘要： Exploration of photovoltaics materials has received enormous interest in a wide range of both fundamental and applied research. Therefore, in this work, we identify a CsSi compound with a Zintl phase for a promising candidate of photovoltaic materials by using global structure prediction method. Electronic structure calculations indicate that this phase possesses a quasi-direct band gap of 1.45 eV, suggesting that its optical properties could be superior to diamond-Si for capturing sunlight from the visible to the ultraviolet range. In addition, a novel silicon allotrope is obtained by removing Cs atoms from this CsSi compound. The superconducting critical temperature of this phase was estimated as a Tc of 9 K in terms of a substantial density of states at the Fermi level. Our findings represent a new promising CsSi material for photovoltaic applications, as well as a potential precursor of a superconducting silicon allotrope.
关键词： Zintl phase,quasi-direct band gap,photovoltaics,superconducting silicon allotrope,CsSi compound
更新于2025-09-23 15:21:01
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High Performances Thermally Activated Delayed Fluorescence Organic Light-emitting Diodes with Wide Gap Phosphorescent Complex as Sensitizer
摘要： In this work, we demonstrated the high performances electroluminescent (EL) devices based on orange-yellow thermally activated delayed fluorescence emitter (TXO-TPA) by utilizing an iridium complex (FK306) as sensitizer. Compared with reference devices without FK306, these co-doped devices displayed significant enhancement of EL performances, which could be attributed to optimized carriers' distribution and efficient energy transfer. In addition, the presence of FK306 molecules helps to broaden the exciton formation zone in EML2, thus suppressing the quenching of triplet excitons. Finally, the optimized co-doped double-EMLs device obtained superior EL performances with maximum current efficiency, power efficiency and external quantum efficiency up to 58.94 cd/A, 61.69 lm/W and 16.5%, respectively. Even at the high brightness of 1000 cd/m2, EL efficiency as high as 12.67 cd/A can still be retained by the same device.
关键词： Organic Light-emitting Diodes,Sensitizer,Wide Gap Phosphorescent Complex,Thermally Activated Delayed Fluorescence
更新于2025-09-23 15:21:01
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Cd12O12 cage cluster-assembled nanowires and band gap regulation: A first-principles investigation
摘要： Based on the first-principle calculation, the stability and electronic properties of Cd12O12 cluster-assembled nanowires and Na-doped Cd12O12 nanowire are studied. The results show that both Cd12O12 nanowire and Na-doped Cd12O12 nanowire are thermodynamically stable (at least at room temperature). The most stable Cd12O12 nanowire exhibits semiconducting properties with a direct energy gap. After doping Na atoms into the nanowire, the electronic properties of the Cd12O12-based nanowire present dramatic changes, and the system transforms from semiconducting to metallic. It can provide a theoretical guidance for the potential application of Cd12O12-based semiconductor devices.
关键词： Assembly,Band gap regulation,Na doped,Cd12O12 cage cluster,Cd12O12 nanowire
更新于2025-09-23 15:21:01
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Self-assembled InAs/InGaAsP/InP quantum dots: Intraband relaxation impacted by ultrathin GaP sublayer
摘要： The influence of an ultrathin GaP (or GaAs) sublayer on the nonradiative intraband relaxation in InAs/InGaAsP/InP quantum dots (QDs) is investigated. It is found that, based on our studies, the QDs with some heights (e.g., 1.5 nm) and GaP sublayer thicknesses (e.g., 1.03 monolayers) present the first excited state (ES) with higher state degeneracy with respect to ground state (GS), which suggests that the Auger relaxation is triggered more easily. We also find that the energy difference of the ES and GS decreases with increasing sublayer thickness, which suggests that the electron–phonon interaction is affected. This work further presents a study of intraband relaxation for an InAs/InP QD with a GaP or GaAs sublayer. It is found that there is a critical thickness of the GaP sublayer: When the sublayer is less than the critical thickness, the intraband relaxation is only determined by one-longitudinal optical (LO) phonon or two-LO phonons, which is dependent on QD heights. However, with the GaAs sublayer, QDs do not have the above feature. This finding may be helpful for designing and optimizing high-speed QD devices.
关键词： quantum dots,electron–phonon interaction,InAs/InGaAsP/InP,intraband relaxation,GaP sublayer
更新于2025-09-23 15:21:01
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High-throughput ab initio calculations on dielectric constant and band gap of non-oxide dielectrics
摘要： High-k dielectrics, materials having a large band gap (Eg) and high dielectric constant (k) simultaneously, constitute critical components in microelectronic devices. Because of the inverse relationship between Eg and k, materials with large values in both properties are rare. Therefore, massive databases on Eg and k will be useful in identifying optimal high-k materials. While experimental and theoretical data on Eg and k of oxides are accumulating, corresponding information is scarce for non-oxide dielectrics with anions such as C, N, F, P, S, and Cl. To identify promising high-k dielectrics among these material groups, we screen 869 compounds of binary carbides, nitrides, sulfides, phosphides, chlorides, and fluorides, through automated ab initio calculations. Among these compounds, fluorides exhibit an Eg-k relation that is comparable to that of oxides. By further screening over ternary fluorides, we identify fluorides such as BiF3, LaF3, and BaBeF4 that could serve as useful high-k dielectrics.
关键词： band gap,dielectric constant,High-k dielectrics,non-oxide dielectrics,ab initio calculations
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE Conference on Antenna Measurements & Applications (CAMA) - Kuta, Bali, Indonesia (2019.10.23-2019.10.25)] 2019 IEEE Conference on Antenna Measurements & Applications (CAMA) - Development of a Wideband Substrate Integrated Waveguide Bandpass Filter Using H-Slotted DGS
摘要： In the current work, a new Wideband Substrate Integrated Waveguide Bandpass Filter (SIW-BPF) is presented. The target is to allow vertical roaming between the X and Ku band applications. As a first step, we performed a parametric study of different etched slot geometries namely, H-Slotted, T-Slotted, and U-Slotted DGS in order to examine the effects of altering different geometrical parameters of the unit on its response. H-Slotted DGS shows the highest FBW with 82.89% on the average compared to other geometries. As a second step, the cell size and the numbers of the H-Slotted DGS were optimized with the use of finite element method with the following constraints taken into consideration: low cost fabrication, high Q-Factor, compact size and easy integration. One of the designs was chosen for fabrication to validate the designed circuit. The measured results show that our optimized filter achieves an insertion loss of 2.01 dB at 8.5 GHz, a return loss higher than 11 dB and fractional bandwidth of 90.87% for a single cell and a fractional bandwidth of 80.05% for multiple cells. The measured results are in good agreement with the simulated results.
关键词： Substrate Integrated Waveguide (SIW),Finite Element Method,Ku-Band,Bandpass filter (BPF),Electromagnetic Band Gap structure (EBG),Wideband,X-Band
更新于2025-09-23 15:21:01
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Designing photonic materials with complete band gaps by topology optimization
摘要： Photonic materials may exhibit the propagation of electromagnetic waves is totally prohibited. To achieve a complete photonic band gap (CPBG) for transverse magnetic (TM) and transverse electric (TE) modes, the bi-directional evolutionary structure optimization (BESO) method originated from structural design is extended for this purpose. The optimization problem is formulated with maximizing the minimum imaginary part of complex wave vectors for TM and TE modes. According to sensitivity analysis, the material distribution within the primitive unit cell of photonic materials is adjusted step by step so as to enlarge the minimum imaginary part of wave vectors. In doing so, the CPBG at the specific frequency is obtained at the desired frequency, and the optimized structures of photonic materials with novel topological patterns are achieved. Numerical examples demonstrate that the effectiveness of the proposed topology optimization method for opening the CPBGs at various specified frequencies, which is of significance in controlling the propagation of electromagnetic waves of any polarization.
关键词： Topology optimization,Complete band gap,Evanescent waves,Photonic materials
更新于2025-09-23 15:21:01
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A Thermally Induced Perovskite Crystal Control Strategy for Efficient and Photostable Widea??Bandgap Perovskite Solar Cells
摘要： Wide-bandgap perovskite solar cells (WBG PSCs) have gained attention as promising tandem partners for silicon solar cells due to their complementary absorption, superb open-circuit voltage, and easy solution process. Recently, both their performance and stability have been improved by compositional-engineering or defect-passivation strategies, due to modulation of perovskite crystal size and reduction of crystal defects. In this work, we report a thermally induced phase control (TIPC) strategy, which enables efficient and photostable WBG PSCs without any compositional engineering by exploring a thermal annealing process window of WBG perovskite films for the annealing temperature and time range of 100-175°C and 3-60 minutes, respectively. Within this window, we found a key annealing regime that produces preferred crystal orientations of lead iodide and the WBG perovskite, suppressing phase segregation and reducing charge recombination in the perovskites. The WBG PSC (composition of FA0.75MA0.15Cs0.1PbI2Br and Eg of 1.73 eV) optimized by TIPC exhibited an excellent power conversion efficiency (PCE) of 18.60% and improved operational stability, maintaining >90% of the maximum PCE (during maximum power point tracking) without encapsulation after 12-hour operation under AM 1.5G irradiation in ambient air conditions and after 500-hour operation under white LED irradiation (100 mW cm-2) in inert N2 gas conditions.
关键词： wide-band gap perovskite,thermal annealing process,operational stability,perovskite solar cells,invariant bandgap
更新于2025-09-23 15:21:01