- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Macroscopic effects and microscopic origins of gamma-ray irradiation on In-doped CdZnTe crystal
摘要： The effects of gamma-ray irradiation, exposed to a 60Co source with a dose of 2.7 kGy, on In-doped CdZnTe (CdZnTe:In) crystal were investigated. We combined the “macroscopic” electrical properties of CdZnTe:In sample, evaluated by current–voltage (I–V) measurements at different temperature, with the “microscopic” origins of electrically active defects induced by gamma-irradiation, characterized by thermally stimulated current spectroscopy. It reveals that the bulk resistivity at room temperature have increased from 2.7 × 109 ? cm for the as-grown CdZnTe:In sample to 5.9 × 109 ? cm for the irradiated sample. Since the microscopic origins of these macroscopic effects are linked to the electrically active defects within the material, five main defect states (I, II, III, IV and V) were characterized and identified in the CdZnTe:In crystal. In particular, the introduction of gamma-irradiation altered the trap concentrations of these defect states, such as the rapidly decreasing concentration of region I. Besides, the gamma-ray irradiation caused a further deepening of EDD level (region V) from the value of 0.717 ± 0.004 eV for the as-grown sample to the value of 0.749 ± 0.004 eV for the irradiated sample. The microscopic origin of EDD level was identified with TeCd2+ below the conduction band minimum, which is responsible for the pinning of EF level near the mid-gap, and thus for the observed high-resistivity performance of CdZnTe:In.
关键词： high-resistivity,electrical properties,defect states,gamma-ray irradiation,CdZnTe:In
更新于2025-09-23 15:21:21
-
Effect of the Gamma-Ray Irradiation on the Electric and Optical Properties of SrTiO3 Single Crystals
摘要： We investigated the visible emission property of SrTiO3 (STO) single crystals irradiated with gammy-ray (γ-ray) at various total doses up to 900 kGy. The electric and optical absorption properties of the irradiated STO samples were hardly changed with the γ-ray irradiation, compared with those of un-irradiated STO. In contrast, the visible emission near 550 nm increased with the γ-ray dose increasing. While the development of the visible emission was indicative of the increase of oxygen vacancies inside STO by the γ-ray irradiation, the newly generated oxygen vacancies were not significantly harmful to the electric and optical properties of STO. We concluded that the STO single crystal should have a good tolerance against the damage by the γ-ray irradiation.
关键词： Gamma-ray irradiation,Photoluminescence,Oxygen vacancy,SrTiO3 single crystal
更新于2025-09-10 09:29:36