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Ultrathin GeSe Nanosheets: from Systematic Synthesis, to Studies of Carrier Dynamics and Applications for High Performance UV-Vis Photo-Detector
摘要： Owing to the attractive energy band properties, black phosphorus (BP)-analogue semiconductor, germanium selenide (GeSe), shows a promising potential applied for optoelectronic devices. Herein, ultrathin GeSe nanosheets were systematically prepared via a facile liquid phase exfoliation (LPE) approach, with controllable nano-scale thickness. Different from BP, ultrathin GeSe nanosheets exhibits a good stability under both liquid and ambient conditions. Besides, its ultrafast carrier dynamics was probed by transient absorption spectroscopy. We showed that the GeSe nanosheets-based photo-detector exhibits excellent photoresponse behaviors ranging from ultraviolet (UV) to the visible regime, with high responsivity and low dark current. Furthermore, the detective ability of such a device can be effectively modulated by varying the applied bias potential, light intensity and concentration of electrolyte. Generally, our present contribution could not only supply fundamental knowledge of GeSe nanosheets-based photoelectrochemical (PEC)-type device, but also offer a guidance to extend other possible semiconductor materials in the application of PEC-type photo-detector.
关键词： photoelectrochemical,photo-detector,liquid phase exfoliation,carrier dynamics,GeSe nanosheets
更新于2025-09-23 15:23:52
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Polarization-Sensitive Self-Powered Type-II GeSe/MoS2 Van der Waals Heterojunction Photodetector
摘要： Polarization-sensitive photodetectors are highly desirable for high performance optical signal capture and stray light shielding in order to enhance the capability for detection and identification of targets in the dark, haze and other complex environments. Usually, filters and polarizers are utilized for conventional devices to achieve polarization-sensitive detection. Herein, to simplify the optical system, a 2-D self-powered polarization-sensitive photodetector is fabricated based on a stacked GeSe/MoS2 van der Waals (vdWs) heterojunction which facilitates efficient separation and transportation of the photogenerated carriers, due to type-II band alignment. Accordingly, a high performance self-powered photodetector is achieved with merits of a very large on-off ratio photocurrent at zero bias of currently 104 and a high responsivity (Rλ) of 105 mA/W with the external quantum efficiency (EQE) of 24.2%. Furthermore, a broad spectral photoresponse is extended from 380 nm to 1064 nm owing to the high absorption coefficient in a wide spectral region. One of the key benefits from these highly anisotropic orthorhombic structures of layered GeSe is self-powered polarization sensitive detection with a peak/valley ratio up to 2.95. This is realized irradiating with a 532 nm wavelength laser with which a maximum photoresponsivity of up to 590 mA/W is reached when the input polarization is parallel to the armchair direction. This work provides a facile route to fabricate self-powered polarization-sensitive photodetectors from GeSe/MoS2 vdW heterojunctions for integrated optoelectronic devices.
关键词： polarization sensitive photodetector,self-powered,type-II band alignment,GeSe/MoS2 heterojunction,broad spectral photoresponse
更新于2025-09-23 15:19:57
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The photovoltaic and photoconductive photodetector based on GeSe/2D semiconductor van der Waals heterostructure
摘要： Although plenty of two-dimensional (2D) semiconductor heterostructure photodetectors have been studied, there is still a lack of systematic comparison and analysis about photovoltaic and photoconductive 2D semiconductor photodetectors. Taking advantage of the 2D semiconductor van der Waals heterostructure, this work constructs a photovoltaic (PV) GeSe/MoS2 and a photoconductive (PC) GeSe/graphene photodetector, respectively. The PC GeSe/graphene photodetector achieves relatively higher photoresponsivity (R), where R can reach up to 104 AW(cid:2)1. The PV GeSe/MoS2 photodetector, by contrast, obtains a faster photoresponse speed. More importantly, the photoresponse properties of the PV GeSe/MoS2 photodetector can remain constant under the reverse bias, due to the minority carrier conduction in its depletion region at this time. The different characteristics of the two type 2D photodetectors are explored in detail, which can play a guiding role in the construction of high-performance photodetectors.
关键词： photovoltaic,photodetector,photoconductive,van der Waals heterostructure,2D semiconductor,GeSe
更新于2025-09-19 17:13:59
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Fast and broadband photoresponse of few-layer GeSe field-effect transistor with direct bandgaps
摘要： Few-to-monolayer germanium selenide, a new Ⅳ-Ⅵ group layered material recently fabricated by mechanical exfoliation and subsequent laser thinning, is promising in very fast and broadband optoelectronic applications for its excellent stability, natural p-type semiconductor, complicated band structures, and inert surface properties. However, large-scale production of such few-layer GeSe devices with superior performance is still in early stages. In this study, field-effect transistors (FETs) made of few-layer GeSe with direct bandgaps are fabricated. Transistor performance with Schottky contact characteristics is measured at room temperature. Field effect mobility of 4 cm2/Vs and drain currents modulated both in hole and electrons are measured. Photoresponse as a function of the illumination wavelength, power, and frequency are characterized. The few-layer GeSe transistor shows photoresponse to the illumination wavelengths from the visible up to 1400 nm, and photoresponse rise (fall) time of 13 μs (19 μs), demonstrating very broadband and fast detection. The ambipolar behavior and the photoresponse characteristics demonstrate great potential of few-layer GeSe for applications in high stability, very fast and broadband of optoelectronic devices.
关键词： broadband photoresponse,photoresponse time,ambipolar behavior,field effect transistors,direct bandgaps,few-layer GeSe
更新于2025-09-12 10:27:22
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Enhancement of photoluminescence efficiency in GeSe ultrathin slab by thermal treatment and annealing: experiment and first-principles molecular dynamics simulations
摘要： The effect of thermal treatment and annealing under different temperatures from 100 °C to 250 °C on the photoluminescence spectroscopy of the GeSe ultrathin slab is reported. After the thermal treatment and annealing under 200 °C, we found that the photoluminescence intensity of A exciton and B exciton in GeSe ultrathin slab is increased to twice as much as that in untreated case, while is increased by ~84% in the photoluminescence intensity of C exciton. Combined by our experimental work and theoretical simulations, our study confirms the significant role of thermal treatments and annealing in reducing surface roughness and removing the Se vacancy to form more compact and smoother regions in GeSe ultrathin slab. Our findings imply that the improved quality of GeSe surface after thermal treatments is an important factor for the photoluminescence enhancement.
关键词： annealing,ultrathin slab,first-principles molecular dynamics,GeSe,photoluminescence,thermal treatment
更新于2025-09-10 09:29:36
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Computational design of GeSe/graphene heterojunction based on density functional theory
摘要： Based on density functional theory, we computational designed the hetero junction composed by decreasing the interlayer distance in G/g hetero structure. The height of Schottky barrier can be demonstrated that both the intrinsic electric properties of the GeSe monolayer and graphene are well preserved in G/g hetero structure. It is found that an energy gap of 0.17 eV in graphene is opened by GeSe monolayer and graphene. The effects of interlayer coupling, strains and electric fields on the electronic structures of the designed GeSe/graphene (G/g) hetero structure are explored. We found that applying in-plane strains and the electric fields perpendicular to the G/g hetero structure can control the Schottky barriers at the G/g interface. Our results predict that the ultra-thin G/g hetero structure can be used as two-dimensional semiconductor-based optoelectronic devices.
关键词： density functional,heterostructure,GeSe monolayer,strain,electric field
更新于2025-09-09 09:28:46