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Noise Analysis of Group IV Material-Based Heterojunction Phototransistor for Fiber-Optic Telecommunication Networks
摘要： This paper presents an analytical study of noise behavior and spectral responsivity of Ge1?xSnx alloy-based heterojunction phototransistors (HPTs) for different Sn compositions and base doping concentrations. The structure consists of n-Ge/p-Ge1?xSnx layers pseudomorphically grown on Si substrate via Ge virtual substrate, compatible with complementary metal-oxide-semiconductor technology. The high absorption coefficient of the alloy in base significantly improves signal-to-noise ratio in the high-frequency region, leading to efficient photodetection in the C- and L-bands of fiber-optic telecommunication window. A comparison is made between the theoretical findings for GeSn HPTs and the available data for currently employed group III–V compound-based HPTs, to examine if GeSn-based HPT can be a good alternative.
关键词： GeSn alloys,absorption coefficient,spectral responsivity,heterojunction phototransistor,signal-to-noise ratio
更新于2025-09-09 09:28:46
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Comprehensive Analysis and Optimal Design of Ge/GeSn/Ge p-n-p Infrared Heterojunction Phototransistors
摘要： We present a comprehensive analysis of practical p-n-p Ge/Ge1?xSnx/Ge heterojunction phototransistors (HPTs) for design optimization for efficient infrared detection. Our design includes a Ge1?xSnx narrow-bandgap semiconductor as the active layer in the base layer, enabling extension of the photodetection range from near-infrared to mid-infrared to perform wide-range infrared detection. We calculate the current gain, signal-to-noise ratio (SNR), and optical responsivity and investigate their dependences on the structural parameters to optimize the proposed Ge1?xSnx p-n-p HPTs. The results show that the SNR is strongly dependent on the operation frequency and that the introduction of Sn into the base layer can improve the SNR in the high-frequency region. In addition, the current gain strongly depends on the Sn content in the Ge1?xSnx base layer, and a Sn content of 6%–9% maximizes the optical responsivity achievable in the infrared range. These results provide useful guidelines for designing and optimizing practical p-n-p Ge1?xSnx HPTs for high-performance infrared photodetection.
关键词： current gain,sign-to-noise ratio,infrared,heterojunction phototransistors,GeSn alloys
更新于2025-09-09 09:28:46