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Passive Quenching Electronics for Geiger Mode 4H-SiC Avalanche Photodiodes
摘要： We design and fabricate 4H-SiC UV avalanche photodiodes (APDs) with positive beveled mesa, which exhibit low leakage current and high avalanche gain when working in the Geiger mode. The single photon counting performance of the SiC APDs is studied by using a passive-quenching circuit. A new method to determine the exact breakdown voltage of the APD is proposed based on the initial emergence of photon count pulses. The photon count rate and dark count rate of the APD are also evaluated as a function of quenching resistance.
关键词： 4H-SiC,single photon counting,passive quenching,Geiger mode,avalanche photodiodes,breakdown voltage
更新于2025-09-19 17:15:36
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Scanning a Silicon Photomultiplier with a Laser Beam
摘要： The Silicon Photomultiplier (SiPM) is a novel semiconducting photodetector which can detect single photons. It consists of many microcells (pixels) operating in the so-called Geiger mode. At present, there are two principal designs among such devices: surface pixel and deeply buried pixel (microwell) structures. The cellular structure decreases the device’s effective photosensitive area, expressed in terms of the geometrical fill factor. It is very important to take it into account when developing new constructions with high pixel densities that are necessary for increasing the dynamic range. It is believed that the fill factor of deep microwell SiPMs is close to unity. In this work, the technique and results of studying the zonal response of different SiPMs by scanning (moving) with micron laser spot are presented. It is shown that the geometrical fill factor of the deep microwell SiPM is less than 100% when detecting the red light (λ = 632 nm).
关键词： Silicon Photomultiplier,Geiger mode,geometrical fill factor,laser scanning,deep microwell SiPM,SiPM
更新于2025-09-16 10:30:52