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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Mid-Infrared GeSn-Based LEDs with Sn Content up to 16%
摘要： We have grown by Reduced Pressure Chemical Vapor Deposition (RPCVD) vertical GeSn light-emitting diodes (LEDs) with (i) Sn content ranging from 6% to 16% and (ii) with or without SiGeSn barriers. Direct band-gap behaviors and activation energies of defects affecting emission efficiency of our different stacks were analyzed by temperature dependent electroluminescence measurements. A strong light emission enhancement was observed thanks to SiGeSn confinement barriers compared to reference samples. The electroluminescence intensity of Ge0.84Sn0.16 LEDs was increased by a factor 2 compared to that of Ge0.87Sn0.13 devices. This strong enhancement at room temperature is attributed to the increase of the splitting energy between Γ and L valleys for higher Sn content LEDs.
关键词： Group IV laser,LED,Germanium Tin,Silicon Photonics
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Mid-Infrared GeSn-Based LEDs with Sn Content up to 16%
摘要： We have grown by Reduced Pressure Chemical Vapor Deposition (RPCVD) vertical GeSn light-emitting diodes (LEDs) with (i) Sn content ranging from 6% to 16% and (ii) with or without SiGeSn barriers. Direct band-gap behaviors and activation energies of defects affecting emission efficiency of our different stacks were analyzed by temperature dependent electroluminescence measurements. A strong light emission enhancement was observed thanks to SiGeSn confinement barriers compared to reference samples. The electroluminescence intensity of Ge0.84Sn0.16 LEDs was increased by a factor 2 compared to that of Ge0.87Sn0.13 devices. This strong enhancement at room temperature is attributed to the increase of the splitting energy between Γ and L valleys for higher Sn content LEDs.
关键词： Germanium Tin,Silicon Photonics,Group IV laser,LED
更新于2025-09-12 10:27:22