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oe1(光电查) - 科学论文

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  • The 1.2 kV 4H-SiC OCTFET: A New Cell Topology with Improved High Frequency Figures-of-Merit

    摘要： A 1.2 kV rated 4H-SiC OCTFET device with octagonal-cell topology is proposed and experimentally demonstrated for the first time. The device was first optimized using TCAD numerical simulations. Devices were then successfully fabricated in a 6 inch foundry. From the measured electrical characteristics, the OCTFET is demonstrated to have 1.4× superior HF-FOM [Ron×Qgd], and 2.1× superior HF-FOM [Ron×Cgd] compared with the conventional linear-cell MOSFET.

    关键词： Silicon carbide,ALL,Octagonal,Qgd,HF-FOMs,Cell,Cgd,MOSFET,4H-SiC

    更新于2025-09-23 15:23:52

  • [Lecture Notes in Electrical Engineering] Recent Trends in Communication, Computing, and Electronics Volume 524 (Select Proceedings of IC3E 2018) || A Comparative Analysis of Asymmetrical and Symmetrical Double Metal Double Gate SOI MOSFETs at the Zero-Temperature-Coefficient Bias Point

    摘要： The silicon-on-insulator (SOI) technology provides the higher current driving capability, low power consumptions, reduced SCEs and extensive scaling of the channel length. But SOI-based MOSFETs are weak in thermal stability like self-heating. In this paper, a comparative analysis of asymmetrical double metal double gate (ADMDG) and symmetrical double metal double gate (SDMDG) at the zero-temperature-coef?cient (ZTC) bias point is proposed. ZTC is the bias point where the device constraints become free of variation in temperature. ADMDG and SDMDG devices are simulated by 2-D Atlas simulator. 2D-Atlas simulation revealed the ?gure of merit (FOMs) such as transconductance (gm), output conductance (gd), intrinsic gain (Av), on-current (Ion), off-current (Ioff), on–off current ratio (Ion/Ioff) and cutoff frequency (fT). The simulation results give the presence of in?ection point of the devices. The variation of ZTC point for transconductance (ZTCgm) and drain current (ZTCIDS) for ADMDG and SDMDG MOSFETs is compared.

    关键词： SDMDG,RF FOMs,Analog,SCEs,ADMDG,Gate engineering

    更新于2025-09-04 15:30:14