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Fabrication and characterization of lead sulfide (PbS) thin film based heterostructure (FTO/CdS/PbS/Ag) solar cell by nebulizer spray method
摘要： This work deals with the study on the key properties of PbS thin films prepared by simple nebulizer spray method. The structural study done by XRD exhibited cubic crystal structure with polycrystalline nature for the deposited PbS films. The obtained crystallite size was varied between 41 to 55 nm for various molar concentrations. The morphology study done by SEM displays uniform distribution of the grains all over the surface of the prepared PbS thin films. The observed band gap value was decreased from 1.8 eV to 1.51 eV for various molar concentrations. The emitted PL intensity was strong at about 580 nm which is related to the near band edge (NBE) emission. Electrical studies performed by Hall Effect measurement confirm the p-type conductivity of prepared films. Resistivity and carrier concentrations are 2.92×103 Ω-cm and 4.83×1013cm-3 respectively for the deposited films. In addition, a heterojunction solar cell of structure FTO/n-CdS/p-PbS/Ag was produced and its conversion efficiency was ~ 0.39%.
关键词： SEM,PbS,Heterojunction device.,Hall Effect,Photoluminescence
更新于2025-11-21 11:18:25
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[IEEE 2019 Sixteenth International Conference on Wireless and Optical Communication Networks (WOCN) - Bhopal, India (2019.12.19-2019.12.21)] 2019 Sixteenth International Conference on Wireless and Optical Communication Networks (WOCN) - Stub Loaded Semi-Circular Resonator for Filter Applications
摘要： Tunnel FETs (TFETs) have been identified as the most promising steep slope devices for ultralow power logic circuits. In this paper, we demonstrate in-plane InAs/Si TFETs monolithically integrated on Si, using our recently developed template-assisted selective epitaxy approach. These devices represent some of the most scaled TFETs with dimensions of less than 30 nm, combined with excellent aggregate performance with average subthreshold swing (SS), of around 70 mV/decade combined with ION of a few μA/μm for |VDS| = |VGS| = 0.5 V. Here, we will discuss the device fabrication as well as the experimental electrical data. Extensive low temperature characterization and activation energy analysis is used to gain insights into the factors limiting device performance. Combined with the simulation study presented in part 2 of this paper, this will elucidate how traps are ultimately limiting the SS.
关键词： selective epitaxy,tunnel FET (TFET),InAs,Heterojunction device
更新于2025-09-16 10:30:52