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oe1(光电查) - 科学论文

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?? 中文（中国） ▾

  • Effect of low-energy ion impact on the structure of hexagonal boron nitride films studied in surface-wave plasma

    摘要： A high‐density surface‐wave plasma source is used to deposit hexagonal boron nitride (hBN) films in a gas mixture of He, H2, N2, Ar, and BF3 under a high ion flux condition using low‐energy ion irradiation. The ion energy is controlled between around zero and 100 eV by applying a negative or positive bias voltage to a substrate, while the ion flux is increased by locating a substrate upstream in the diffusive plasma. For ion energies above ～37 eV, the structure of the films depends upon ion energy more than substrate temperature, typical of subplantation processes. As a result, the structural order and crystallinity of sp2‐bonded phase in the films characterized by Fourier transform infrared spectroscopy and X‐ray diffraction are increased with decreasing ion energy, while the mass density of the films characterized by X‐ray reflectivity is retained relatively high with a slight dependence upon ion energy.

    关键词： surface‐wave plasma,Fourier transform infrared spectroscopy (FTIR),chemical vapor deposition (CVD),hexagonal boron nitride (hBN),X‐ray diffraction (XRD),X‐ray reflectivity (XRR)

    更新于2025-09-23 15:21:21

  • Tunable reflected group delay from the graphene/hBN heterostructure at infrared frequencies

    摘要： In this paper, we theoretically investigated the re?ected group delay from the graphene/hexagonal boron nitride (hBN) heterostructure in the infrared band. Since the signi?cant Lorentz resonance characteristic of the dielectric constant of hBN in the bands of near 7.28 μm and 12.72 μm, the new graphene/hBN heterostructure is used to realize ?exible switching of re?ected group delay by the Lorentz resonance mechanism. It is shown that the re?ected group delay can be e?ectively enhanced by tuning the Fermi energy or the number of graphene layers. Moreover, the re?ected group delay can be tuned positive or negative depending on the hBN thickness or incident angle. These results will be useful for design of graphene-based optical delay devices in the infrared band.

    关键词： Graphene,Hexagonal boron nitride (hBN),Group delay,Infrared band

    更新于2025-09-12 10:27:22