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Towards epitaxial graphene p-n junctions as electrically programmable quantum resistance standards
摘要： We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant RK with a relative uncertainty of 10?7. After the exploration of numerous parameter spaces, we summarize the conditions upon which these devices could function as potential resistance standards. Furthermore, we offer designs of programmable electrical resistance standards over six orders of magnitude by using external gating.
关键词： p-n junctions,quantum resistance standards,gate dielectric,hexagonal boron nitride,epitaxial graphene
更新于2025-09-09 09:28:46
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[IEEE 2018 IEEE 2nd International Conference on Dielectrics (ICD) - Budapest (2018.7.1-2018.7.5)] 2018 IEEE 2nd International Conference on Dielectrics (ICD) - High Voltage Electrical Properties of Epoxy / h-BN Microcomposites
摘要： Two high voltage properties – DC conductivity and AC breakdown strength – of epoxy composites filled with 30 wt% of micron sized hexagonal boron nitride (h-BN) are discussed in comparison to neat epoxy. The influence of h-BN upon the field dependence of DC conductivity has been studied up to 18 kV/mm. The addition of h-BN does not lead to a modification of conduction mechanisms: the J-V characteristics show an ohmic behavior at low fields and a space charge limited current (SCLC) at higher fields for both neat epoxy and composite. However, the addition of 30 wt% h-BN reduces the overall electrical conductivity and increases the threshold voltage between ohmic and SCLC regions, leading to a significant modification of electrical conductivity within the field range compared to neat epoxy. AC breakdown strength is enhanced for epoxy – h-BN composites while generally speaking the addition of micro fillers in an epoxy matrix tends to decrease it.
关键词： DC conductivity,electrical conduction mechanisms,epoxy composites,hexagonal boron nitride,AC breakdown strength
更新于2025-09-09 09:28:46
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Photonic Nanostructures from Hexagonal Boron Nitride
摘要： Growing interest in devices based on layered van der Waals (vdW) materials is motivating the development of new nanofabrication methods. Hexagonal boron nitride (hBN) is one of the most promising materials for studies of quantum photonics and phonon polaritonics. A promising nanofabrication process used to fabricate several hBN photonic devices using a hybrid reactive ion etching (RIE) and electron beam-induced etching (EBIE) technique is reported in detail here. The shortcomings and benefits of RIE and EBIE are highlighted and the utility of the hybrid approach for the fabrication of suspended and supported device structures with nanoscale features and highly vertical sidewalls are demonstrated. Functionality of the fabricated devices is proven by measurements of high-quality cavity optical modes (Q ≈ 1500). This nanofabrication approach constitutes an advance toward an integrated, monolithic quantum photonics platform based on hBN and other layered vdW materials.
关键词： hexagonal boron nitride,photonic devices,nanofabrication,nanophotonics,layered materials
更新于2025-09-04 15:30:14
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Quantitative determination of a model organic/insulator/metal interface structure
摘要： By combining X-ray photoelectron spectroscopy, X-ray standing waves and scanning tunneling microscopy, we investigate the geometric and electronic structure of a prototypical organic/insulator/metal interface, namely cobalt porphine on monolayer hexagonal boron nitride (h-BN) on Cu(111). Specifically, we determine the adsorption height of the organic molecule and show that the original planar molecular conformation is preserved in contrast to the adsorption on Cu(111). In addition, we highlight the electronic decoupling provided by the h-BN spacer layer and find that the h-BN–metal separation is not significantly modified by the molecular adsorption. Finally, we find indication of a temperature dependence of the adsorption height, which might be a signature of strongly-anisotropic thermal vibrations of the weakly bonded molecules.
关键词： hexagonal boron nitride,X-ray standing waves,X-ray photoelectron spectroscopy,cobalt porphine,Cu(111),scanning tunneling microscopy,organic/insulator/metal interface
更新于2025-09-04 15:30:14
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monolayers on the hBN-layer thickness
摘要： The optical properties of two-dimensional transition-metal dichalcogenide monolayers, such as MoS2 or WSe2 are dominated by excitons, Coulomb bound electron-hole pairs. Screening effects due to the presence of hexagonal-boron nitride (hBN) surrounding layers have been investigated by solving the Bethe-Salpeter equation on top of GW wave functions in density functional theory calculations. We have calculated the dependence of both the quasiparticle gap and the binding energy of the neutral exciton ground-state Eb as a function of the hBN-layer thickness. This paper demonstrates that the effects of screening at this level of theory are more short ranged than is widely believed. The encapsulation of a WSe2 monolayer by three sheets of hBN (～1 nm) already yields a 20% decrease in Eb, whereas the maximal reduction is 27% for thick hBN. We have performed similar calculations in the case of a WSe2 monolayer deposited on stacked hBN layers. These results are compared to the recently proposed quantum electrostatic heterostructure approach.
关键词： GW wave functions,density functional theory,hexagonal-boron nitride,two-dimensional transition-metal dichalcogenide,Bethe-Salpeter equation,exciton
更新于2025-09-04 15:30:14
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Tuning the electronic structure of hexagonal boron nitride by carbon atom modification: a feasible strategy to reduce sliding friction
摘要： Essentially, the interlayer interaction of the two-dimensional (2D) layered material is dominant, so it is expected to modify the electronic configuration of the system to change the interlayer interaction for the purpose of reducing interlayer sliding friction. In this paper, using density functional theory (DFT) calculation, we report an effective method to reduce the sliding friction between the two-layer hexagonal boron nitride layers for changing the hexagonal boron nitride electronic structure via introducing carbon. Research results indicate that the increase of the potential energy fluctuation along the sliding path increases with the increase of the load, which is caused by the difference of the degree of interlayer interaction on the sliding path with the increase of the load; at the same time, we found that the appearance of C at the B or N position can promote the interlayer charge transfer to different extents (B position is better than N position) in the BN/BN bilayer, and then produce the effect of reducing the energy barrier on the sliding path between the layers.
关键词： hexagonal boron nitride,charge transfer,friction,electronic configuration,2D material
更新于2025-09-04 15:30:14
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Tunnel spectroscopy of localised electronic states in hexagonal boron nitride
摘要： Hexagonal boron nitride is a large band gap layered crystal, frequently incorporated in van der Waals heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applications in nanophotonics and quantum information processing. However, they also give rise to conducting channels, which can induce electrical breakdown when a large voltage is applied. Here we use gated tunnel transistors to study resonant electron tunnelling through the localised states in few atomic-layer boron nitride barriers sandwiched between two monolayer graphene electrodes. The measurements are used to determine the energy, linewidth, tunnelling transmission probability, and depth within the barrier of more than 50 distinct localised states. A three-step process of electron percolation through two spatially separated localised states is also investigated.
关键词： quantum information processing,hexagonal boron nitride,tunnel spectroscopy,localised electronic states,graphene
更新于2025-09-04 15:30:14