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Inert gas cluster formation in sputter-deposited thin film CdTe solar cells
摘要： Magnetron sputtering is widely used for thin film deposition because it is a relatively low temperature process which also produces films with excellent uniformity. Unfortunately, in its use for the deposition of thin film CdTe devices, the inert working gas from the magnetron can incorporate into the film during the growth process and aggregate into large subsurface clusters during postprocessing. The gas clusters often occur at the CdS/CdTe interface causing delamination and blisters up to about 30 μm in diameter are readily observable on the film’s surface. The surface blisters are observed after postprocessing with CdCl2 at an elevated temperature but smaller inert gas clusters of several nanometres in diameter can be observed using high resolution transmission electron microscopy before the CdCl2 treatment. In this paper, these effects are investigated both experimentally and using molecular dynamics modelling. Some suggestions are also made as to how the effect might be minimised and higher efficiency solar devices fabricated.
关键词： Solar Cells,Cadmium Telluride,Argon bubbles,Molecular Dynamics,High Resolution Electron Microscopy,Magnetron Sputtering
更新于2025-09-19 17:13:59
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Epitaxial Ge-rich silicon layers after dry oxidation of Ge implanted silicon
摘要： We report on formation of epi-layer of SixGe1-x by taking standard procedure in CMOS technology. The competitive process of solid solubility of Ge dopant into Si and SiO2 is the key to engineer atomically sharp, low defect very thin epitaxial layer at the interface of oxide-Si. Oxidation time process was used to control the distribution of the doped Ge ions at the interface of Si with oxide and in the oxide layer. Implanted samples (35 keV and 1 × 1016 Ge+/cm2) were oxidized at 1050 °C for 30–90 min. RBS-Channeling analysis shows two separate peaks of Ge corresponds to different depths after oxidation. Corroborate with high resolution microscopy and elemental analysis, we determined the first peak as enriched layer of SixGe1-x at the interface of SiO2eSi. Less than 10 nm epitaxially grown interfacial layer is very low in defects, and Ge ions are fully substituted into the host lattice. The second peak originated from diffusion of Ge into SiO2 resulted in a segregated layer containing Ge in oxide film. Technological demand on forming SixGe1-x layer for CMOS application through standard routes is what we address in this research.
关键词： High resolution electron microscopy,Point defects,Germanium silicon alloys,Ion implantation,Solid phase epitaxy
更新于2025-09-09 09:28:46