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Low-Power-Operating 3C-SiC Ultraviolet Photodetector fora?￡Elevated Temperature Applications
摘要： This work demonstrates the systematic investigation of the effects of high temperature on key performance parameters including speed, sensitivity, stability, and repeatability of a 3C-SiC/Si ultraviolet (UV) photodetector (PD) at various operating temperatures ranging from 50°C to 200°C. The device with very low dark current (≈ 0.08 pA) exhibited high sensitivity of 4466 and fast rise and decay times of 0.34 s and 0.30 s at 50°C to exposure of 254 nm UV light at a bias voltage of 20 V. Additionally, the device showed very good performance at a low operating voltage of 0.5 V and high temperature of 200°C, with a rise time of 2.68 s and decay time of 1.44 s, while maintaining good stability and repeatability. The slight decrease in performance (sensitivity from 4466 to 932) at 200°C was attributed to the increase in lattice scattering at elevated temperatures, leading to a decrease in carrier mobility. Moreover, the device was fabricated using a very cost-effective process flow. Consequently, this study can contribute to the development of low-power, fast, highly sensitive, and cost-effective 3C-SiC UVPDs for use in high-temperature photonic applications.
关键词： fast response,high sensitivity,High-temperature UVPD,low-voltage operation,3C-SiC
更新于2025-09-23 15:21:01
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Persistence of the R3m Phase in Powder GeTe at High Pressure and High Temperature
摘要： As a phase-change material, rhombohedral GeTe (space group R3m) was believed to transform to the cubic rock-salt phase (B1) at 3–4 GPa, associated with the disappearance of a Peierls distortion. However, using a combination of synchrotron X-ray diffraction and theoretical calculations, we found that the R3m phase persists from ambient pressure up to pressures of about 15.8 GPa, in contrast to previous reports. Neither was the B1 phase observed in a heating X-ray powder diffraction experiment. The spurious transformation from R3m to B1 is caused by changes to the compression ratio of lattice parameters in the R3m phase under high pressure/temperature. These findings provide insight into transitions of phase-change materials, relevant to other materials undergoing displacive transitions under high pressure/temperature.
关键词： structural phase transitions,density-functional theory,high pressure,phase-change materials,high temperature,GeTe,synchrotron X-ray diffraction
更新于2025-09-23 15:21:01
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Effect of laser shock processing on oxidation resistance of laser additive manufactured Ti6Al4V titanium alloy
摘要： The high-temperature oxidation resistance of laser additive manufactured (LAM) Ti6Al4V before and after laser shock processing (LSP) was investigated. The samples were oxidized at 400?800 °C for 1?50 h in air. The results revealed that the rate of weight gain of the Ti6Al4V fabricated through LAM decreased, and LSP had a positive effect on increasing the oxidation resistance. At an oxidation temperature of 700 °C, an aluminum-rich layer was observed in the cross-section before LSP. After LSP, the aluminum-rich layer changed to three layers. The aluminum-rich layer prevented the diffusion of oxygen, which improved the oxidation resistance of the Ti6Al4V.
关键词： Ti6Al4V titanium alloy,High-temperature oxidation resistance,Laser shock processing,Laser additive manufacturing
更新于2025-09-23 15:21:01
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Organic Solar Cells Based on Small Molecule Donor and Polymer Acceptor Operating at 150 ?°C
摘要： Organic Solar Cells Based on Small Molecule Donor and Polymer Acceptor Operating at 150 oC. Inorganic or organic solar cells always operate at temperature lower than 100 oC and are not suitable for operating at high temperature. In this work, using blends of small molecular donor and polymer acceptor (MD/PA-type) as the active layers, we develop efficient and stable organic solar cells (OSCs), which can operate at temperature up to 150 oC. The device exhibits a power conversion efficiency (PCE) of 9.51%, which is the highest value reported to date for MD/PA-type OSCs. After thermal treatment at 150 oC for 72 hours, the device can retain 84% of its initial PCE value. This superior device stability at high temperature is attributed to the high phase transition temperatures of the two materials in the MD/PA-type active layer. This work suggests a new advantage of high-temperature tolerance for OSCs.
关键词： Power Conversion Efficiency,Small Molecule Donor,Organic Solar Cells,Polymer Acceptor,High Temperature Operation
更新于2025-09-23 15:21:01
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EXPRESS: Influence of Line Pair Selection on Flame Tomography Using Infrared Absorption Spectroscopy
摘要： We report the influence of absorption line selection on the tomographic results for high-temperature flames by numerical and experimental methods. Different combinations of infrared H2O absorption transitions are utilized with the Tikhonov-regularized Abel inversion to reconstruct the radial distribution of temperature and H2O concentration in a flat flame. It is shown that besides using the mathematical algorithm such as regularization, selecting a line pair with a large ΔE″ (> 1390 cm–1) also reduces the reconstruction uncertainty at 300–2000 K. In this study, a proper selection of absorption line pairs reduces the reconstruction uncertainty by 25% at the same level of noise. The line pair of H2O transitions at 4029.524 cm–1 and 4030.729 cm–1 is recommended for the tomography of high-temperature flames at 1000–3000 K, whereas the line pair of 7185.597 cm–1 and 7444.352 cm–1 can be used at 300–1000 K.
关键词： tunable diode laser absorption spectroscopy,TDLAS,Tomography,high-temperature flame,line selection
更新于2025-09-23 15:21:01
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CaBi <sub/>4</sub> Ti <sub/>4</sub> O <sub/>15</sub> -based lead-free sol–gel composites for high-temperature application
摘要： CaBi4Ti4O15 (CBiT)-based lead-free sol–gel composites were developed for high-temperature ultrasonic transducer application. In this study, two types of lead-free sol–gel solution, Ba0.7Sr0.3TiO3 (BST) and Bi4Ti3O12 (BiT), were used for consistency to fabricate >50-μm-thick CBiT/BST and CBiT/BiT ?lms on 3-mm-thick titanium substrates by a sol–gel spray technique. BST and BiT were chosen because of their high dielectric constant and high Curie temperature, respectively, in addition to their being lead-free materials. A thermal cycle test was carried out between RT and 600 °C, and clear multiple echoes were con?rmed during three thermal cycles for both materials. In addition, the sensitivity of CBiT/BiT was higher than that of CBiT/BST although a higher poling temperature is required for CBiT/BiT. Therefore, an ultrasonic transducer potential for high-temperature application was successfully demonstrated. ? 2018 The Japan Society of Applied Physics
关键词： ultrasonic transducer,high-temperature,sol–gel composites,lead-free,CaBi4Ti4O15
更新于2025-09-23 15:21:01
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Higha??temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots
摘要： We introduce a high–temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of high temperatures for the self-assembly of droplet epitaxy quantum dots solves major issues related to material defects, introduced during the droplet epitaxy fabrication process, which limited its use for single and entangled photon sources for quantum photonics applications. We identify the region in the parameter space which allows quantum dots to self–assemble with the desired emission wavelength and highly symmetric shape while maintaining a high optical quality. The role of the growth parameters during the droplet arsenization is discussed and modeled.
关键词： GaAs/AlGaAs,quantum photonics,arsenization dynamics,high–temperature droplet epitaxy,quantum dots
更新于2025-09-23 15:21:01
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Experimental evaluation of silicon photonics transceiver operating at 120°C for 5G antenna array systems
摘要： The use of optical transceivers in antenna array system applications requires reliable operation at high temperature. The experimental characterisation of a silicon photonics transceiver operating in a harsh environment with temperatures up to 120°C is presented and discussed. The transceiver was placed inside a climatic chamber and it was fed by an external depolarised light source. The bit error rate was measured, and the impacts on transmission performances were analysed and discussed, including reliability aspects. The authors believe that silicon photonics transceivers with an optimised design and with improvements in the optical connector and fibre adhesive technology are suitable for this kind of applications.
关键词： silicon photonics,antenna array systems,transceiver,5G,high temperature operation
更新于2025-09-23 15:21:01
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[IEEE 48th European Solid-State Device Research Conference (ESSDERC 2018) - Dresden (2018.9.3-2018.9.6)] 2018 48th European Solid-State Device Research Conference (ESSDERC) - Compact MEMS modeling to design full adder in Capacitive Adiabatic Logic
摘要： We propose implementation of a 1-bit full adder following Capacitive Adiabatic Logic (CAL) paradigm. Combinational logic functions including AND, OR, and XOR gates are realized by five-terminal comb-drive MEMS elements. By in CAL, we demonstrate the ability of MEMS device to be cascadable. By MEMS compact modeling, we can evaluate the energy dissipation and speed of adding operation. In the presented full adder, 99.6% of the energy transferred to the device is recovered for later use when it operates on 2 kOPS.
关键词： compact modeling,capacitive adiabatic logic,MEMS,full adder,high-temperature electronics
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) - Bochum, Germany (2019.7.16-2019.7.18)] 2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) - New approach for the simulation of bent and crumpled antennas on a flexible substrate
摘要： First-ever 28 nm embedded split-gate MONOS (SG-MONOS) ?ash macros have been developed to increase memory capacity embedded in micro controller units and to improve performance over wide junction temperature range from C to 170 C as demanded strongly in automotive uses. Much attention has been paid to the degradation of the reliability characteristics along with the process shrinkage. Temperature-adjusted word-line overdrive scheme improves random read access frequency by 15% and realizes both of 6.4 GB/s read throughput by 200 MHz no-wait random access of code ?ash macros and more than ten times longer TDDB lifetime of WL drivers. Temperature-adaptive step pulse erase control (TASPEC) improves the TDDB lifetime of dielectric ?lms between metal interconnect layers by three times. TASPEC is particularly useful for a data ?ash macro with one million rewrite cycles. Source-side injection (SSI) program with negative back-bias voltage achieves 63% reduction of program pulse time and, consequently, realizes 2.0 MB/s write throughput of code ?ash macros. A spread spectrum clock generation and a clock phase shift technique are introduced for charge pump clock generation in order to suppress EMI noise due to high write throughput of code ?ash macros, and peak power of EMI noise is reduced by 19 dB.
关键词： high reliability,spread spectrum clock generation,word-line overdrive,Automotive application,split-gate MONOS(SG-MONOS),embedded ?ash memory,time dependent dielectric breakdown,high-temperature operation,Fast random read operation
更新于2025-09-23 15:19:57