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oe1(光电查) - 科学论文

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?? 中文（中国） ▾

  • Solution-processed amorphous gallium-tin oxide thin film for low-voltage, high-performance transistors; 溶液法制备低电压及高性能非晶GaSnO薄膜晶体管;

    摘要： Gallium-tin oxide (GTO) semiconductor thin films were prepared by spin-coating with 2-methoxyethanol as the solvent. Their crystal structures, optical transparency, chemical states and surface morphologies, along with the electrical properties, were dependent on Ga contents and annealing temperatures. The optimized GTO channel layer was applied in the high-k Al2O3 thin film transistor (TFT) with a low operation voltage of 2 V, a maximum field-effect mobility of 69 cm2 V?1 s?1, a subthreshold swing (SS) of 76 mV dec?1, a threshold voltage of 0.67 V and an on-off current ratio of 1.8×107. The solution-processed amorphous-GTO-TFTs would promote the development of low-consumption, low-cost and high performance In-free TFT devices.

    关键词： GTO semiconductor films,thin-film transistor,Al2O3 dielectric,stability

    更新于2025-09-23 15:22:29

  • Efficient Continuous-Wave Diode-Pumped Ho :GTO Laser with a Pump Recycling Scheme

    摘要： We demonstrate a novel continuous-wave 2.1 μm Ho : GTO laser pumped by a laser diode. Employing a pump recycling scheme and 30% output transmittance, we obtain an output power of 4.76 W and a single oscillating peak of 2068.4 nm with a slope e?ciency of 55.3% with respect to the absorbed pump power. In addition, the M2 factor of the Ho : GTO laser is reckoned to be approximately 1.3 at the maximum output power.

    关键词： infrared laser,diode-pumped laser,Ho : GTO

    更新于2025-09-23 15:19:57