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An In-Depth Study on Electrical and Hydrogen Sensing Characteristics of ZnO Thin Film with Radio Frequency Sputtered Gold Schottky Contacts
摘要： Electrical and hydrogen sensing characteristics of radio frequency sputtered Au/ZnO thin film Schottky diodes on n-silicon substrate have been investigated over a wide temperature range. Current-voltage characterizations of the device in the temperature range of 25°C to 200°C confirm its excellent rectifying property with forward to reverse current ratio of 1610 at an external bias of 5 V. Ideality factor in the range of 4.12 to 2.98 is obtained for Au/ZnO Schottky diode in the aforementioned temperature range, at atmospheric conditions. On exposing diode to hydrogen, a reduction in ideality factor is observed which makes thermionic emission more prominent. The proposed device has proven to be hydrogen sensitive, on account of the lateral shift observed in I ? V characteristics at different hydrogen concentrations (50 ppm-1000 ppm). Maximum barrier height variation of 99 meV and sensitivity of 144% have been observed at 1000 ppm hydrogen at 200°C. A Detailed perusal of the steady-state reaction kinetics of the sensor using I ? V characteristics affirmed that the atomistic hydrogen adsorption at Au/ZnO interface is accountable for the barrier height modulation. The studied sensor depicts remarkable performance for high-temperature detection.
关键词： Hydrogen sensing,Zinc oxide (ZnO) thin film,Electrical characteristics,Schottky diode,Metal-semiconductor interface,Palladium catalyst
更新于2025-09-23 15:22:29
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Hydrogen Sensing Characteristics of AlGaInP/InGaAs Complementary Co-Integrated Pseudomorphic Doping-Channel Field-Effect Transistors
摘要： In this article, the hydrogen sensing device and logic characteristics of the Al0.25Ga0.25In0.5P/In0.1Ga0.9As complementary co-integrated pseudomorphic doping-channel ?eld-effect transistors are demonstrated. Due to the existence of a relatively large conduction (valence) band discontinuity at Al0.25Ga0.25In0.5P/In0.1Ga0.9As heterojunction and the employment of a small energy-gap In0.1Ga0.9As channel layer, it could provide a high gate barrier height to avoid electrons (holes) injection form channel into gate region in the studied n-channel (p-channel) device. With respect to the n-channel (p-channel) transistor under hydrogen ambient, hydrogen molecules are adsorbed and dissociated on the Pd catalytic metal surface, followed by rapid diffusion of hydrogen atoms into the MS interface where the dipoles are formed to lower (elevate) the gate barrier height and enhance (decrease) the drain current. In the n-channel (p-channel) device, the threshold voltages at drain current of 0.1 mA/mm are of 0.67 (0.05) and 0.38 (?0.26) V in air and at hydrogen concentration of 9800 ppm, respectively. As hydrogen is detected, the characteristics of inverters shift left obviously, and the VOH and VIH values are decreased.
关键词： field-effect transistors,hydrogen sensing,AlGaInP/InGaAs,logic characteristics
更新于2025-09-23 15:21:01
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A Schottky-junction-based platinum nanoclusters@silicon carbide nanosheet as long-term stable hydrogen sensors
摘要： Hydrogen gas sensors which could be applied in harsh environments (high temperature, corrosion atmosphere, etc.) are highly demanded in special fields such as aerospace and chemical industry. Here, we have successfully produced a platinum nanoclusters@silicon carbide nanosheets (Pt NCs@SiC NSs) gas sensor via a simple one-step wet chemical reduction reaction. The Pt NCs@SiC NSs show good response (15.7%) towards 500 ppm hydrogen under 300 °C. Besides, this device possesses a good linear response towards different hydrogen concentration under 500 ppm and keeps a good stability in one month. The gas sensing properties of Pt NCs@SiC NSs are mainly from the Schottky junction-based structure, in which both reception and transduction process play important roles. This work provides a simple way to prepare high-temperature hydrogen sensors without complex equipment, and the large-scale preparation is also available.
关键词： hydrogen sensing,Pt nanoclusters@SiC nanosheets,chemical reduction reaction,high-temperature
更新于2025-09-23 15:19:57
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Enhanced hydrogen sensing properties of Pd-coated SnO2 nanorod arrays in nitrogen and transformer oil
摘要： We report enhanced sensing properties of Pd-coated SnO2 nanorod (NR) arrays for detecting H2 gas in N2 and dissolved in transformer oil. The Pd nanoparticles were coated on randomly ordered vertical SnO2 NR arrays by the glancing angle deposition (GLAD) method, which utilizes an electron-beam evaporator and a DC magnetron sputtering system. The Pd-coated SnO2 NR arrays exhibited high response (104 at 1% H2) in N2. Pd-coated SnO2 NR arrays were immersed and in mineral oil that contains various concentrations of dissolved H2 and the electrical response was measured. We found that the Pd-coated SnO2 NR arrays showed superior response (R = ?96), low detection limit (0.3 ppm), and fast response times (300 s). The Pd-coated SnO2 NR arrays had a temperature coefficient of resistance (TCR) of 3.69 × 10-3 °C-1 at various oil temperatures (20–80 °C), indicating good thermal stability at high temperatures. The sensing mechanism of the Pd-coated SnO2 NR arrays was also demonstrated by using changes in the Schottky barrier height at the Pd/SnO2 interface upon exposure to H2.
关键词： Pd,SnO2,Transformer oil,Nanorod arrays,Hydrogen sensing
更新于2025-09-19 17:15:36
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[IEEE 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Huangshan, China (2019.8.5-2019.8.8)] 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Cascaded TCF with WO <sub/>3</sub> film based Mach–Zehnder interferometer for hydrogen sensing
摘要： A hydrogen gas sensor based on cascaded TCF with WO3 film was demonstrated to monitoring the hydrogen concentration. By detecting spectral shifts, the proposed sensor showed a high sensitivity of 2.074444 dB/% under the hydrogen concentration of 0.00% to 1.32%.
关键词： Mach–Zehnder interferometer(MZI),Hydrogen sensing,TCF
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE SENSORS - Montreal, QC, Canada (2019.10.27-2019.10.30)] 2019 IEEE SENSORS - Crumpled Carbon Nanotube Thin Film Heaters for High Sensitivity Hydrogen Sensing
摘要： This paper reports the fabrication and characterization of crumpled multi-walled carbon nanotube (CNT) thin film heater and its application towards hydrogen gas sensing. We have fabricated MWCNTs thin film heater by a simple spray coating and thermally shrinking the polystyrene (PS) substrate. Thermal shrinkage results crumpled CNTs with closely packed junctions, leading to a higher heating temperature at a given input voltage. Such efficient heating capabilities of the crumpled CNT heater are favorable for hydrogen gas sensing with good desorption characteristics. Our results show that higher operating temperatures result in better measurement sensitivities. In addition, the heating performance and temperature coefficient of resistance (TCR) of CNT heaters are analyzed for an accurate temperature control. The suggested crumpled CNT heaters can be applied for low-voltage gas sensing platforms.
关键词： gas sensor,Hydrogen sensing,MWCNTs,Thin film heater,Joule heating,Substrate shrinkage
更新于2025-09-16 10:30:52