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One‐Pot Exfoliation of Graphitic C <sub/>3</sub> N <sub/>4</sub> Quantum Dots for Blue QLEDs by Methylamine Intercalation
摘要： Here, a simplified synthesis of graphitic carbon nitride quantum dots (g-C3N4-QDs) with improved solution and electroluminescent properties using a one-pot methylamine intercalation–stripping method (OMIM) to hydrothermally exfoliate QDs from bulk graphitic carbon nitride (g-C3N4) is presented. The quantum dots synthesized by this method retain the blue photoluminescence with extremely high fluorescent quantum yield (47.0%). As compared to previously reported quantum dots, the g-C3N4-QDs synthesized herein have lower polydispersity and improved solution stability due to high absolute zeta-potential (?41.23 mV), which combine to create a much more tractable material for solution processed thin film fabrication. Spin coating of these QDs yields uniform films with full coverage and low surface roughness ideal for quantum dot light-emitting diode (QLED) fabrication. When incorporated into a functional QLED with OMIM g-C3N4-QDs as the emitting layer, the LED demonstrates ≈60× higher luminance (605 vs 11 Cd m?2) at lower operating voltage (9 vs 21 V), as compared to the previously reported first generation g-C3N4 QLEDs, though further work is needed to improve device stability.
关键词： graphitic carbon nitride,quantum dot light-emitting diodes,metal-free semiconductors,hydrothermal exfoliation
更新于2025-09-19 17:13:59
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A universal method for large-yield and high-concentration exfoliation of two-dimensional hexagonal boron nitride nanosheets
摘要： Hexagonal boron nitride (hBN) is an ultra-wide bandgap insulating material, which possesses a graphite-like layered structure, and the two-dimensional (2D) hexagonal boron nitride nanosheets (hBNNS), exfoliated from the bulk hBN, have promising applications in electronic packaging and high-power devices, due to the high thermal conductivity, excellent thermal/chemical stability as well as the ultra-wide band gap. However, the exfoliation of hBNNS is still a challenge with respect to high cost, time consuming, and low yield. Herein, a facile hydrothermal exfoliation method was proposed for the first time to exfoliate the hBNNS in a large yield and high concentration. In the optimized hydrothermal conditions, the lithium ion (Li+) intercalation, isopropanol (IPA) solvent, and the strong stirring could give rise to a large exfoliation yield up to (cid:1)55% and a high concentration (cid:1)4.13 mg/mL. In addition, the exfoliated hBNNS could enhance the methyl orange (MO) photodegradation efficiency of TiO2 from 91% to 96.4 %. Most importantly, this hydrothermal exfoliation method could be a universal approach for the exfoliation of 2D materials.
关键词： Hydrothermal exfoliation,Nanosheets,2D materials,Hexagonal boron nitride,Solubility parameters theory,Universal approach
更新于2025-09-10 09:29:36
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[IEEE 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Shanghai (2018.8.8-2018.8.11)] 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Hydrothermal assembly of one-dimensional boron nitride nanostructures
摘要： Boron nitride (BN) is a state-of-the-art ultrawide bandgap semiconducting material. One-dimensional (1D) boron nitride nanostructures have high thermal conductivity (~600 W/mK) and wide band gap (5~6eV), which make it a promising thermal interface material. The 1D BN nanostructures were usually synthesized with chemical vapor deposition, restricted by the low yield and the high cost. Herein, we present a facile hydrothermal method to get 1D BN nanostructures. In the hydrothermal process, 2D BN nanosheets were firstly exfoliated from the BN powder, and then curled into 1D BN nanostructure through the chemical etching with sodium hydroxide. The alternative approach exhibited a high yield and a high concentration, which should be meaningful for the fabrication of 1D BN nanostructures.
关键词： One-dimensional nanostructure,Hydrothermal exfoliation,Chemical etching,Boron nitride
更新于2025-09-04 15:30:14