- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Optical study of p-doping in GaAs nanowires for low-threshold and high-yield lasing
摘要： Semiconductor nanowires suffer from significant non-radiative surface recombination, however, heavy p-type doping has proven to be a viable option to increase the radiative recombination rate and hence quantum efficiency of emission, allowing demonstration of room-temperature lasing. Using a large-scale optical technique, we have studied Zn-doped GaAs nanowires to understand and quantify the effect of doping on growth and lasing properties. We measure the non-radiative recombination rate (knr) to be (0.14 ± 0.04) ps?1 by modelling the internal quantum efficiency (IQE) as a function of doping level. By applying a correlative method, we identify doping and nanowire length as key controllable parameters determining lasing behavior, with reliable room-temperature lasing occurring for p ?3 × 1018 cm?3 and lengths ? 4 μm. We report a best-in-class core-only near-infrared nanowire lasing threshold of ～ 10 μJ cm?2 , and using a data-led filtering step, we present a method to simply identify sub-sets of nanowires with over 90% lasing yield.
关键词： Doping,PL,III-V Nanowire lasers
更新于2025-09-09 09:28:46
-
Selectivity map for molecular beam epitaxy of advanced III-V quantum nanowire networks
摘要： Selective area growth is a promising technique to enable fabrication of scalable III-V nanowire networks required to test proposals for Majorana-based quantum computing devices. However, the contours of the growth parameter window resulting in selective growth remain undefined. Herein, we present a set of experimental techniques which unambiguously establish the parameter space window resulting in selective III-V nanowire networks growth by molecular beam epitaxy. Selectivity maps are constructed for both GaAs and InAs compounds based on in situ characterization of growth kinetics on GaAs(001) substrates, where the difference in group III adatom desorption rates between the III-V surface and the amorphous mask area is identified as the primary mechanism governing selectivity. The broad applicability of this method is demonstrated by successful realization of high quality InAs and GaAs nanowire networks on GaAs, InP, and InAs substrates of both (001) and (111)B orientations as well as homoepitaxial InSb nanowire networks. Finally, phase coherence in Aharonov-Bohm ring experiments validates the potential of these crystals for nanoelectronics and quantum transport applications. This work should enable faster and better nanoscale crystal engineering over a range of compound semiconductors for improved device performance.
关键词： GaAs,selectivity,selective area growth,epitaxy,InAs,III-V nanowire,molecular beam epitaxy
更新于2025-09-09 09:28:46