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[IEEE 2020 5th International Conference on Devices, Circuits and Systems (ICDCS) - Coimbatore, India (2020.3.5-2020.3.6)] 2020 5th International Conference on Devices, Circuits and Systems (ICDCS) - Heterojunction Tunnel Field Effect Transistors a?? A Detailed Review
摘要： Tunnel FET(TFET) can provide ultra-low quiescent (~pA) current. Some of the essential parameters for determining the characteristics of TFET are high ION current, constrained Subthreshold slope value, and reduced ambipolar leakage. TFET experiences a sub-threshold decrease of less than 60mV / decade in the process of the sub-threshold slope and hence higher transconductance per bias current than MOSFET. This article would be beneficial to get a review of various device structures and their performances of Tunnel FET. In this paper, we examined the multiple TFET device structures and compared their performances for attaining the desired ION / IOFF.
关键词： Tunnel FET(TFET),ambipolar,ION / IOFF
更新于2025-09-23 15:19:57
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[IEEE 2018 Iranian Conference on Electrical Engineering (ICEE) - Mashhad (2018.5.8-2018.5.10)] Electrical Engineering (ICEE), Iranian Conference on - Investigating a Novel Normally-On AlGaN/GaN Capped PHEMT and the Effects of Cap Layers Thickness on its Gate Leakage Current
摘要： In this paper the effects of cap layers thickness in the AlGaN/GaN capped pseudomorphic high electron mobility transistor (PHEMT) are investigated using Atlas/Silvaco Simulator. The proposed structure improves the prior AlGaN/GaN capped HEMT reported in the literature by insertion of an In0.15Ga0.85N layer between the AlN spacer and the GaN buffer layers and optimization of the different layers dimensions, in order to minimize gate leakage current. Simulation results demonstrate a gate leakage current of 10-14 (A) and an Ion/Ioff of higher than 11 orders of magnitude, so that it is 3 orders of magnitude higher than that of the prior non-optimal structure.
关键词： AlGaN/GaN capped PHEMT,In0.15Ga0.85N layer,spacer layer,Ion/Ioff ratio
更新于2025-09-10 09:29:36