- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Near Infrared Lasera??Annealed IZO Flexible Device as a Sensitive H2S Sensor at Room Temperature
摘要： A metal-oxide material (indium zinc oxide [IZO]) device with near-infrared (NIR) laser annealing was demonstrated on both glass and bendable plastic substrates (polycarbonate, polyethylene, and polyethylene terephthalate). After only 60 s, the sheet resistance of IZO films annealed with a laser was comparable to that of thermal-annealed devices at temperatures in the range of 200°C–300°C (1 hr). XPS, ATR, and AFM were used to investigate the changes in the sheet resistance and correlate them to the composition and morphology of the thin film. Finally, the NIR laser-annealed IZO films were demonstrated to be capable of detecting changes in humidity and serving as a highly sensitive gas sensor of hydrogen sulfide (in parts-per-billion concentration), with room-temperature operation on a bendable substrate.
关键词： IZO,sol-gel,laser annealing,NIR,gas sensor,flexible
更新于2025-09-23 15:21:01
-
Effects of Annealing on Characteristics of Cu2ZnSnSe4/CH3NH3PbI3/ZnS/IZO Nanostructures for Enhanced Photovoltaic Solar Cells
摘要： This paper presents new photovoltaic solar cells with Cu2ZnSnSe4/CH3NH3PbI3(MAPbI3)/ZnS/IZO/Ag nanostructures on bi-layer Mo/FTO (fluorine-doped tin oxide) glass-substrates. The hole-transporting layer, active absorber layer, electron-transporting layer, transparent-conductive oxide layer, and top electrode-metal contact layer, were made of Cu2ZnSnSe4, MAPbI3 perovskite, zincsulfide, indium-doped zinc oxide, and silver, respectively. The active absorber MAPbI3 perovskite film was deposited on Cu2ZnSnSe4 hole-transporting layer that has been annealed at different temperatures. TheseCu2ZnSnSe4 filmsexhibitedthe morphology with increased crystal grain sizesand reduced pinholes, following the increased annealing temperature. When the perovskitefilm thickness was designed at 700 nm, the Cu2ZnSnSe4 hole-transporting layer was 160 nm, and the IZO (indium-zinc oxide) at 100 nm, and annealed at 650°C, the experimental results showed significant improvements in the solar cell characteristics. The open-circuit voltage was increased to 1.1 V, the short-circuit current was improved to 20.8 mA/cm2, and the device fill factor was elevated to 76.3%. In addition, the device power-conversion efficiency has been improved to 17.4%. The output power Pmax was as good as 1.74 mW and the device series-resistance was 17.1 ?.
关键词： IZO,hole-transporting material,perovskite,CZTSe,magnetron sputtering
更新于2025-09-23 15:19:57
-
The effect of indium doping on photovoltaic properties of chemically synthesized zinc oxide thin-film electrodes
摘要： Photovoltaic (PV) performance of chemically synthesized indium-doped zinc oxide (IZO) nanorod electrodes has been investigated by photocurrent density-voltage (J-V). The indium (In) concentration was varied from 2 to 6 at.% for IZO. The J-V measurements as performed under a dark condition and a simulated white light of 80 mW/cm2 confirmed increase in PV performance with the IZO electrodes, making a peak with the 4 at.% In concentration. The investigated properties of the synthesized In-doped ZnO nanorod electrodes (structural and optical) strongly agreed with the PV results and well support the enhanced PV performance of the IZO electrodes. This clearly indicates that IZO electrodes would be preferred against undoped ones in PV solar cell application.
关键词： IZO electrodes,Photovoltaic performance,In concentration,Wurtzite crystal structure,ZnO nanorods
更新于2025-09-11 14:15:04
-
Enhanced photocatalytic activity and photocurrent properties of plasma-synthesized indium-doped zinc oxide nanopowder
摘要： Zinc oxide and indium-doped zinc oxide (IZO) nanopowders (wurtzite crystal phase) were synthesized by plasma-assisted chemical vapor synthesis route. In this method, the injected precursors were vaporized in the plasma flame, followed by vapor-phase reaction and subsequent quenching of the vaporized materials, resulting in the formation of nanoparticles. The amount of indium nitrate was varied to obtain 4 at. % and 8 at. % indium incorporated in zinc oxide, designated as ‘IZO1’ and ‘IZO2’, respectively. UV–visible absorbance spectra of the product showed a redshift in the spectra with increasing doping amount of indium. Photocatalytic properties of ZnO and IZO nanoparticles were evaluated using the degradation of methylene blue (MB) under ultraviolet irradiation, and the kinetic analyses indicated that the photodegradation followed pseudo-first order kinetics. In addition, IZO1 nanoparticles exhibited superior photocatalytic activity to ZnO and IZO2 nanoparticles, and the enhancement was attributed to the low recombination rate of photogenerated charge carriers. The major role of defect concentrations (oxygen vacancies) toward MB degradation was also analyzed by Raman and XPS spectra. The effect of scavengers in the photodegradation process indicated that h+ and O2? were the main oxidant species involved in the degradation process. A mechanism of photodegradation process in IZO was proposed based on Mulliken electronegativity approach. Enhanced photocurrent density was obtained in IZO1, and the electrochemical impedance spectroscopy (EIS) results also pointed to an enhanced separation efficiency of electrons and holes at a lower indium doping amount as in IZO1.
关键词： ZnO,Plasma synthesis,IZO,Photocatalysis,Photocurrent,Indium-doped zinc oxide
更新于2025-09-10 09:29:36