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Sputtered and selenized Sb2Se3 thin-film solar cells with open-circuit voltage exceeding 500??mV
摘要： Antimony selenide (Sb2Se3) is a potential absorber material for environment-friendly and cost-efficient photovoltaics and has achieved considerable progress in recent years. However, the severe open-circuit voltage (Voc) deficit ascribed to the interface and/or bulk defect states has become the main obstacle for further efficiency improvement. In this work, Sb2Se3 absorber layer was prepared by an effective combination reaction involving sputtered and selenized Sb precursor thin films. The self-assembled growth of Sb2Se3 thin films with large crystal grains, benign preferential orientation, and accurate chemical composition were successfully fulfilled under an appropriate thickness of Sb precursor and an optimized selenization scenario. Substrate structured Sb2Se3 thin-film solar cells, a champion device with a power-conversion efficiency of 6.84%, were fabricated. This device is comparable to state-of-the-art ones and represents the highest efficiency of sputtered Sb2Se3 solar cells. Importantly, the high Voc of 504 mV is closely related to the reduced deep level defect density for the Sb2Se3 absorber layer, the passivated interfacial defects for Sb2Se3/CdS heterojunction interface, and the additional heterojunction heat treatment-induced Cd and S inter-diffusion. This significantly improved Voc demonstrates remarkable potential to broaden its scope of applications for Sb2Se3 solar cells.
关键词： Open-circuit voltage,Selenization,Sb2Se3 solar Cell,Elemental inter-diffusion,Sputtering
更新于2025-09-23 15:21:01
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In-Situ Tailoring of Vertically Coupled InAs p-i-p Quantum-Dot Infrared Photodetectors: Toward Homogeneous Dot Size Distribution and Minimization of Ina??Ga Intermixing
摘要： The authors report a detailed analysis of an epitaxial growth technique for Indium Arsenide (InAs) Quantum-dot infrared photodetectors to circumvent the detrimental effects arising from the progressively increasing dot-size in vertically coupled heterostructures. Constant overgrowth percentage of the vertically coupled dot-layers has been achieved with the implementation of the growth strategy, which has been validated by cross-sectional transmission electron microscopy (X-TEM) images of the samples. The optical characteristics of these samples have been analyzed through photoluminescence spectroscopy and photoluminescence excitation spectroscopy (PL and PLE) measurements which show longer wavelength response and reduced full width at half-maxima (FWHM) upon implementation of the growth strategy. X-TEM, in-plane and out-of-plane high resolution X-ray diffraction (HR-XRD) measurements suggest morphological improvement upon implementation of the growth strategy, with a reduction in the Indium desorption and lowering of defects and dislocation densities. Excellent correlation has been found between the different experimental results and also their theoretical simulations. The fabricated single-pixel photodetectors at low temperature (T=14K) show a broad response extending up to the MWIR region (~4.5μm) for one of the samples. Also, a strong spectral response in the SWIR region is obtained even at room temperature (T=300K). The highest responsivity (Rp) and specific detectivity (D*) values obtained are 166.17 A/W and 8.39 x 1010 cmHz1/2W-1 at a bias of 5V and 300K temperature.
关键词： p-i-p infrared photodetectors,InAs Quantum Dots,MBE growth strategy,homogenous dot size distribution,room temperature spectral response,In-Ga inter-diffusion
更新于2025-09-19 17:13:59
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Limit of Incorporating Cesium Cations into Formamidinium-Methylammonium Based Mixed Halide Perovskite Solar Cells
摘要： Cesium (Cs) makes perovskite robust in terms of thermodynamic stability as well. We explore the means of incorporating Cs into a base perovskite of mixed cation (FA/MA) and mixed halide (I/Br) that has a proven track record of high performance through inter-diffusion approach. With this approach, it has been shown that perovskites form a smooth film without any residual PbI2 and exhibit higher absorbance. Though the residual PbI2 disappeared with the increase in added Cs, the film morphology became rough for Cs concentration higher than 15%. Addition of small amounts of PbCl2 allowed inclusion of more Cs content, which resulted in smooth film surface and further improved device performance.
关键词： mixed-cations,Cs-incorporation,thin-film solar cells,inter-diffusion,two-step process,Perovskite
更新于2025-09-12 10:27:22