1200nma??Band InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation

摘要： In this paper, the quantum dot intermixing (QDI) technique previously developed for 1550nm-band InAs/InAlGaAs quantum dot (QD) was applied to 1200nm-band InAs/GaAs QD. Three methods of defect introduction for triggering the QDI were employed such as ICP-RIE (Ar+) and ion implantation (Ar+ and B+). As a result, about 80nm PL peak wavelength shift was obtained for ICP-RIE when annealing was performed at 575 °C, after etching down to 450 nm to the QD layer. On the other hand, about 110nm PL peak wavelength shift was obtained for B+ ion implantation at an acceleration energy of 120 keV and a dose of 1.0×1014 /cm2 and subsequent annealing. Cross sectional image analyses by Scanning Transmission Electron Microscope (STEM) and Energy-Dispersive X-ray Spectroscopy (EDX) clarified the modification of InAs QD structures by the QDI process.