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High-Efficiency Multiple Quantum Well Triple-Junction Tandem Solar Cell
摘要： This work shows the design of a high-efficiency solar cell in an indium-gallium-arsenide/–gallium-arsenide multiple quantum well (MQW) structure. The main concerns regarding the solar cell are its fabrication complexity, design complexity, and efficiency. Tandem solar cells are designed to absorb the maximum amount of solar energy. In a tandem structure, different positive-negative junctions are responsible for absorbing different portions of the solar spectrum. Besides this, the embedded MQW structure also helps to increase the efficiency of the solar cell. The maximum efficiency of the tandem solar cell in the different material structures is reported to be around 45%–46%. Proper matching of different material parameters such as the lattice-matched semiconductor and thickness of the tandem solar cell can increase the efficiency of the solar cell. This paper introduces a tandem solar cell having an efficiency of around 50%. This comparative study shows the improved performance of the proposed solar cell. A graphical user interface is also developed for solar cell simulation.
关键词： tandem solar cell,multi-quantum well,InGaAs-GaAs,quantum well,Solar cell
更新于2025-09-23 15:19:57
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InGaAs-GaAs Nanowire Avalanche Photodiodes Toward Single Photon Detection in Free-Running Mode
摘要： Single photon detection at near-infrared (NIR) wavelengths is critical for light detection and ranging (LiDAR) systems used in imaging technologies such as autonomous vehicle trackers and atmospheric remote sensing. Portable, high-performance LiDAR relies on silicon-based single-photon avalanche diodes (SPADs) due to their extremely low dark count rate (DCR) and afterpulsing probability, but their operation wavelengths are typically limited up to 905 nm. Although InGaAs-InP SPADs offer an alternative platform to extend the operation wavelengths to eye-safe ranges, their high DCR and afterpulsing severely limit their commercial applications. Here we propose a new selective absorption and multiplication avalanche photodiode (SAM-APD) platform composed of vertical InGaAs-GaAs nanowire arrays for single photon detection. Among a total of 4400 nanowires constituting one photodiode, each avalanche event is confined in a single nanowire, which means that the avalanche volume and the number of filled traps can be drastically reduced in our approach. This leads to an extremely small afterpulsing probability compared with conventional InGaAs-based SPADs and enables operation in free-running mode. We show DCR below 10 Hz, due to reduced fill factor, with photon count rates of 7.8 MHz and timing jitter less than 113 ps, which suggest that nanowire-based NIR focal plane arrays for single photon detection can be designed without active quenching circuitry that severely restricts pixel density and portability in NIR commercial SPADs. Therefore, the proposed work based on vertical nanowires provides a new degree of freedom in designing avalanche photodetectors and could be a stepping stone for high-performance InGaAs SPADs.
关键词： free-running mode,InGaAs-GaAs,single photon detection,avalanche photodiodes,near-infrared,nanowires
更新于2025-09-09 09:28:46