- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Edge-plasmon assisted electro-optical modulator
摘要： An efficient electro-optical modulation has been demonstrated here by using an edge-plasmon mode specific for the hybrid plasmonic waveguide. Our approach addresses a major obstacle of the integrated microwave photonics caused by the polarization constraints of both active and passive components. In addition to subwavelength confinement, typical for surface plasmon polaritons, the edge-plasmon modes enable exact matching of the polarization requirements for silicon based input/output grating couplers, waveguides, and electro-optical modulators. A concept of the hybrid waveguide, implemented in a sandwichlike structure, implies a coupling of propagating plasmon modes with a waveguide mode. The vertically arranged sandwich includes a thin layer of epsilon-near-zero material (indium tin oxide) providing an efficient modulation at small length scales. Employed edge plasmons possess a mixed polarization state and can be excited with horizontally polarized waveguide modes. It allows the resulting modulator to work directly with efficient grating couplers and avoid using bulky and lossy polarization converters. A 3D optical model based on Maxwell equations combined with drift-diffusion semiconductor equations is developed. Numerically heavy computations involving the optimization of materials and geometry have been performed. Effective modes, stationary state field distribution, an extinction coefficient, optical losses, and charge transport properties are computed and analyzed. In addition to the polarization matching, the advantages of the proposed model include the compact planar geometry of the silicon waveguide, reduced active electric resistance R and a relatively simple design, attractive for experimental realization.
关键词： polarization constraints,hybrid plasmonic waveguide,drift-diffusion semiconductor equations,electro-optical modulation,edge-plasmon mode,indium tin oxide,epsilon-near-zero material,Maxwell equations
更新于2025-09-11 14:15:04
-
Stabilisation of Cu films in WO3/Ag/Cu:Al/WO3 structures through their doping by Al and Ag
摘要： Indium tin oxide (ITO) is the most common transparent conductive material used in industrial processes. It has many advantages, but also some disadvantages: Indium is scarce and ITO deposition techniques are aggressive for organic materials, making it difficult to use it as top electrode in organic devices. Moreover its ceramic structure limits its application in flexible devices. Among the possible new In free transparent conductive electrode, dielectric/metal/dielectric multilayer structures such as WO3/M/WO3 appear very promising. However, silver, which is the metal the more often used is expensive. Therefore it would be very profitable if copper, which is abundant on earth, could be substituted for silver. However the stability with time of the structure using Cu is questionable due to the high Cu diffusivity. In the present manuscript we improve significantly the lifetime of the structures using the alloy Cu:Al when a thin silver layer (2 nm) is introduced between the WO3 bottom layer and the Cu:Al. It is shown that the Cu atom mobility is significantly decreased by the presence of Al of the alloy and of Ag which appears to diffuse into the metal layer forming an eutectic with Cu.
关键词： Copper aluminum alloy,Tungsten oxide,Indium tin oxide-free,Transparent electrode,Multilayer structures,Flexible electrode
更新于2025-09-10 09:29:36
-
Water-Based Indium Tin Oxide Nanoparticle Ink for Printed Toluene Vapours Sensor Operating at Room Temperature
摘要： This study is focused on the development of water-based ITO nanoparticle dispersions and ink-jet fabrication methodology of an indium tin oxide (ITO) sensor for room temperature operations. Dimensionless correlations of material-tool-process variables were used to map the printing process and several interpretational frameworks were re-examined. A reduction of the problem to the Newtonian fluid approach was applied for the sake of simplicity. The ink properties as well as the properties of the deposited layers were tested for various nanoparticles loading. High-quality films were prepared and annealed at different temperatures. The best performing material composition, process parameters and post-print treatment conditions were used for preparing the testing sensor devices. Printed specimens were exposed to toluene vapours at room temperature. Good sensitivity, fast responses and recoveries were observed in ambient air although the n-type response mechanism to toluene is influenced by moisture in air and baseline drift was observed. Sensing response inversion was observed in an oxygen and moisture-free N2 atmosphere which is explained by the charge-transfer mechanism between the adsorbent and adsorbate molecules. The sensitivity of the device was slightly better and the response was stable showing no drifts in the protective atmosphere.
关键词： Indium tin oxide,room temperature,inkjet ink,gas sensor,dimensionless number,material printing,nanoparticle
更新于2025-09-10 09:29:36
-
A Novel Transparent pH Sensor Based on a Nanostructured ITO Electrode Coated with [3,3′-Co(1,2-C2B9H11)2]-Doped Poly(pyrrole)
摘要： A novel transparent and nanostructured ion-sensitive electrode based on indium tin oxide (ITO) coated with cobaltbis(dicarbollide)-doped poly(pyrrole) (PPy) is presented in this work. This metallacarborane-doped PPy was used as conducting polymer due to its high stability and chemical resistance. The ion-sensitive electrode was coupled to a miniaturized and low-cost potentiostat, in a final autonomous kit for potentiometric determination of pH. Qualitative calibration of the system revealed Nernstian behavior, resulting promising for novel point-of-care biomedical applications.
关键词： indium tin oxide (ITO),intrinsically conducting polymer (ICP),poly(pyrrole) (PPy),pH sensor,potentiometry,potentiometric sensor,boron compounds,nanoscience,metallacarboranes
更新于2025-09-10 09:29:36
-
High Temperature, Transparent, Superhydrophobic Teflon AF-2400/Indium Tin Oxide Nanocomposite Thin Films
摘要： The outstanding properties of Teflon AF-2400—chemical, optical, etc.—inspired us to make modifications to enhance its hydrophobicity. We prepared an AF-2400/Indium Tin Oxide Nanocomposite by a spin coating technique at room temperature, using the AF-2400 polymer as the matrix and indium tin oxide (ITO) nanoparticles as the filler. Different ITON concentrations ranging from 3 mg/ml to 30 mg/ml were prepared to study the effect of nanoparticle loading on the films’ properties and superhydrophobicity. The effect of spin speed and annealing temperature was also studied. Atomic force microscopy, x-ray photoelectron spectroscopy, and UV-vis analysis were employed to characterize the prepared films. The results indicate that the film’s low surface energy and nano/micro-features made it superhydrophobic. Increasing the ITON concentration to 15 mg/ml improved the superhydrophobicity of the composite film by increasing the surface roughness. The coating showed superhydrophobic behavior with a static contact angle around 152o and contact angle hysteresis less than 2o. The nanocomposite films also exhibited excellent thermal stability sustaining temperature as high as 240°C without losing its superhydrophobic behavior. Three models, Wenzel, Cassie-Baxter, and Shuttleworth-Bailey, were used to predict the static contact angle. The results confirmed that the latter model gave the best prediction. In addition to superhydrophobicity, the AF-2400/ITON films coated on a glass substrate showed very high transparency—around 95% in the visible and infrared range. An effective medium theory, the Bergman representation, was used to simulate the transmittance of the AF-2400/ITON nanocomposites. The measured and simulated transmittance values were in good agreement in the visible range. Based on our results, this coating may be highly useful for many practical applications, including solar cell coatings, chemical resistance protective coatings, and more.
关键词： High Temperature,Superhydrophobic,Nanocomposite,Indium Tin Oxide,Transparent,Teflon AF-2400
更新于2025-09-10 09:29:36
-
Effect of gamma irradiation dose on the structure and pH sensitivity of ITO thin films in extended gate field effect transistor
摘要： Even though several studies have demonstrated the use of Indium Tin Oxides (ITO) as an extended gate field effect transistor (EGFET), the effect of different doses of gamma radiation on the intrinsic properties of the ITO films has not been considered. This study investigates the effect of gamma irradiation on the structural, optical, morphological and electrical properties as well as pH sensitivity (as an extended gate field effect transistor) of ITO thin films. ITO thin films with thickness of 400 nm were prepared using a radio frequency sputtering technique. The samples were then subjected to various doses of gamma radiation from a Co-60 radio-isotope (0.5 kGy, 1 kGy, 1.5 kGy, and 2 kGy). The structural and morphological changes as well as transmission and absorption of the thin films were analyzed using X-ray diffraction (XRD), Atomic Force Microscopy (AFM), Field-Emission Scanning Electron Microscope (FESEM) and UV-Vis spectrophotometry, before and after irradiation. The irradiated ITO thin films were then used as an extended gate field effect transistor to determine its ability to improve sensitivity as pH sensors. The grain size and transmittance in the range 300-900 nm of the ITO films were found to decrease with increasing gamma irradiation dose. In contrast, the uniformity and surface roughness of ITO thin films increased with increasing gamma radiation dose due to the formation of lattice defects. Moreover, the electrical resistance of the thin films increased with increasing dose because of the low current density and high number of surface defects associated with irradiation. The pH sensitivity of the ITO thin films improved after irradiation, possibly due to the concomitant increase in surface roughness with increasing radiation dose. The improvements in the pH sensitivity of ITO thin films after irradiation justify their potential use as pH sensors.
关键词： EGFET,pH sensor,Optical band gap,Gamma irradiation,X-ray diffraction,Indium Tin Oxide,Thin films
更新于2025-09-10 09:29:36
-
Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film
摘要： In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10?4 ?/cm), carrier concentration (4.1 × 1021 cm?3), carrier mobility (10 cm2/Vs), and mean visible-light transmittance (90%) at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm?3) with a high figure of merit (81.1 × 10?3 ??1) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.
关键词： indium tin oxide (ITO),transparent conducting oxide (TCO),magnetron sputtering,oxide-related compound
更新于2025-09-09 09:28:46
-
Characterization of functionalized glass and indium tin oxide surfaces as substrates for super-resolution microscopy
摘要： Modern high-throughput biosensors with sensitivity down to a single analyte molecule may be possible with single-molecule localization microscopy (SMLM). Functionalized surfaces can be fabricated with self-assembly monolayer chemistry on indium tin oxide (ITO) substrates but not glass. However, characterizations of SMLM-compatible fluorophores are primarily performed on glass substrates. Here we collect single-molecule kinetics data of isolated Alexa Fluor 647 molecules on bare and functionalized glass and ITO surfaces. Extracting the photophysical dynamics of the fluorophores allows direct comparison of behavior of this dye on these substrates and fitting data to a model that accounts for multiple reversible dark states. All surfaces had sensitivity sufficient to image single fluorophore molecules. Photophysical kinetics observed are similar between the two substrates. The photon yield from individual fluorophores was greatest on bare glass, but functionalized ITO surfaces showed superior yield to functionalized glass surfaces and nearly matched the yield of bare glass. Together these results indicate functionalized ITO as a promising substrate for modern single-molecule biosensors.
关键词： indium tin oxide,super-resolution microscopy,biosensor,single-molecule imaging
更新于2025-09-09 09:28:46
-
Recent Advances in Tunable and Reconfigurable Metamaterials
摘要： Metamaterials are composed of nanostructures, called artificial atoms, which can give metamaterials extraordinary properties that cannot be found in natural materials. The nanostructures themselves and their arrangements determine the metamaterials’ properties. However, a conventional metamaterial has fixed properties in general, which limit their use. Thus, real-world applications of metamaterials require the development of tunability. This paper reviews studies that realized tunable and reconfigurable metamaterials that are categorized by the mechanisms that cause the change: inducing temperature changes, illuminating light, inducing mechanical deformation, and applying electromagnetic fields. We then provide the advantages and disadvantages of each mechanism and explain the results or effects of tuning. We also introduce studies that overcome the disadvantages or strengthen the advantages of each classified tunable metamaterial.
关键词： plasmonics,metasurface,indium tin oxide,wavefront engineering,phase change material,color filter,perfect absorber,graphene
更新于2025-09-09 09:28:46
-
Samarium-Doped Indium-Tin-Oxide Electrode for Organic Light-Emitting Devices
摘要： Here in, properties of samarium-doped indium-tin-oxide (ITO:Sm) films deposited by DC-magnetron sputtering, and organic light-emitting devices (OLEDs) using an ITO:Sm film as an anode were investigated. The electrical resistivity of the ITO:Sm films increased with Sm doping. The work function of each ITO:Sm film (5.2–5.7 eV) was higher than that of an ITO film (4.8 eV). The crystal structure of the ITO:Sm films was In2O3-type when the doping ratio of Sm in the film was up to 5 at.%, and the structure was amorphous in more strongly samarium-doped films. The properties of the OLEDs were varied by the doping ratio of samarium in the ITO:Sm electrodes. The OLEDs with the ITO:Sm electrode exhibited higher efficiency than that of an ITO-based control device at the same current density.
关键词： Samarium Doped Indium-Tin-Oxide,Organic Light-Emitting Diodes
更新于2025-09-09 09:28:46