Vapor-deposited all inorganic CsPbBr3 thin films and interface modification with C8-BTBT for high performance photodetector

摘要： All inorganic perovskites like CsPbBr3 have attracted rising attention and are considered as promising candidates for optoelectronic devices. Here we fabricated CsPbBr3 films by co-evaporation. The as-deposited and low temperature (below 300 °C) annealed films are in a mixture phase of CsPbBr3 and CsPb2Br5. After 400 °C annealing in ambient air, the CsPbBr3 phase becomes dominant with a good crystal structure and less defects. Then, 2,7-diocty[1]benzothieno-[3,2-b]benzothiophen (C8-BTBT) was deposited on the CsPbBr3 film layer-by-layer to investigate the interface electronic structure with X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). As C8-BTBT was deposited, p-doping effect was observed at the surface of CsPbBr3 by the interface energy level alignment. At the same time, we also observed a chemical reaction at the interface and a small amount of lead sulfite might be formed. CsPbBr3 based photodetectors with or without C8-BTBT modified layer were also fabricated and studied. It was found that the photocurrent of the detectors with an additional C8-BTBT layer was about two orders of magnitude higher than that without C8-BTBT layer. The responsivities and response time are also improved with C8-BTBT. We attribute the improvement of photoelectronic properties to the interface energy level adjustment by the C8-BTBT. These results highlight the potential of C8-BTBT as a modified layer for inorganic perovskite optoelectronic devices.