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An Efficient Technique using Modified p-q Theory for Controlling Power Flow in a Single-Stage Single-Phase Grid-Connected PV System
摘要： In this paper, an efficient power conditioning unit (PCU) is presented for a single-phase grid-connected photovoltaic system (GCPVS) incorporating both maximum power-point tracking (MPPT) and current control algorithms in a single-stage. Modified p-q theory is applied to derive the reference signal for a hysteresis band current (HBC) controller so that independently the active and reactive power sharing between the photovoltaic (PV) system and the grid can be controlled. Enhanced stability during the internal dynamics, caused by the variations in PV generation and load conditions, is the prime aspect of the controller. The performance of the proposed p-q theory correlated HBC controller is evaluated against tracking of maximum PV power and compensation of load reactive power under the changeable atmospheric and load conditions, and also compared with the widely used conventional proportional resonant (PR) controller to justify superiority. Simulation and experiment are carried-out under variable weather and different load conditions to validate acceptability of the proposed control scheme.
关键词： modified p-q theory,Single-stage,hysteresis band current (HBC) controller,grid-connected photovoltaic system (GCPVS),power flow controlling
更新于2025-09-23 15:23:52
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High-<formula><tex>$T_\rm{c}$</tex></formula> Superconducting Fourth-Harmonic Mixer using a Dual-Band Terahertz On-Chip Antenna of High Coupling Efficiency
摘要： This paper presents a dual-band on-chip antenna coupled high-Tc superconducting (HTS) Josephson-junction sub-terahertz (THz) fourth-harmonic mixer. The antenna utilizes a couple of different structured twin-slots to enable the resonant radiations at two frequencies, and integrates a well-designed coplanar waveguide (CPW) network for achieving good radiation coupling and signal isolation characteristics. The electromagnetic (EM) simulations show that coupling efficiencies as high as -4 dB and -3.5 dB are achieved for the 160-GHz and 640-GHz operating frequency bands, respectively. Based on this dual-band antenna, a 640-GHz HTS fourth-harmonic mixer is developed and characterized in a range of operating temperatures. The mixer exhibits a measured conversion gain of around -18 dB at 20 K and -22 dB at 40 K respectively. The achieved intermediate-frequency (IF) bandwidth is larger than 23 GHz. These are the best results reported for HTS harmonic mixers at comparable sub-THz frequency bands to date.
关键词： high-temperature superconductor Josephson junction,dual-band on-chip antenna,terahertz wireless applications,fourth-harmonic mixing,Terahertz mixer
更新于2025-09-23 15:23:52
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[IEEE 2018 20th International Conference on Transparent Optical Networks (ICTON) - Bucharest (2018.7.1-2018.7.5)] 2018 20th International Conference on Transparent Optical Networks (ICTON) - Thin Films of Barium Strontium Titanate from the Viewpoint of Light-Based Applications
摘要： In this paper we report results from optical transmittance spectroscopy complemented with data on structure from XRD measurements to determine optical properties of a series of as-deposited and annealed (at 900 °C) BaSrTiO3 (BST) thin films deposited by RF magnetron sputtering. The members of the series differ by the substrate temperature and additional oxygen to accompany argon in the deposition chamber. The perovskite structure with weak preferred (110) orientation was detected for annealed BST thin films whilst the as-deposited films were amorphous. Dispersive optical properties – refractive indices, absorption coefficients and optical band gaps were determined from transmittance spectra. After annealing refractive indices increase to prove the densification of material accompanied by the thickness shrinkage. Optical band gaps calculated either by Tauc procedure or determined as iso-absorption levels are also found to be deposition dependent.
关键词： absorption coefficient,thin films,barium strontium titanate,refractive index,optical band gap
更新于2025-09-23 15:23:52
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Precision mapping the topological bands of 2D spin-orbit coupling with microwave spin-injection spectroscopy
摘要： To investigate the band structure is one of the key approaches to study the fundamental properties of a novel material. We report here the precision band mapping of a 2-dimensional (2D) spin-orbit (SO) coupling in an optical lattice. By applying the microwave spin-injection spectroscopy, the band structure and spin-polarization distribution are achieved simultaneously. The band topology is also addressed with observing the band gap close and re-open at the Dirac points. Furthermore, the lattice depth and the Raman coupling strength are precisely calibrated with relative errors in the order of 10?3. Our approach could also be applied for exploring the exotic topological phases with even higher dimensional system.
关键词： Topological band,Microwave spin-injection spectroscopy,Spin polarization,Topological phase transition,2D spin-orbit coupling
更新于2025-09-23 15:23:52
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Porous Organic Polymer-Coated Band-Aids for Phototherapy of Bacteria-Induced Wound Infection
摘要： Band-Aids have been widely used for wound care. For most adhesive bandages, however, they have limited capacity to speed up the wound healing process, which in turn may cause serious wound infections. In this study, antibacterial Band-Aids, combining porphyrin based porous organic polymers (POPs) with commercial antibiotics-free Band-Aids, are designed. Under white light irradiation, POP can produce effective photothermal heat, as well as highly reactive oxygen species (ROS), thereby triggering the potent hyperthermia and simultaneous ROS increase on wounds. What's more, white-light is similar with sunlight, which makes POP-based Band-Aids (PBA) ideal wound dressings for wound disinfection.
关键词： wound infection,porous organic polymers,band-aids,white light
更新于2025-09-23 15:23:52
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Band Alignment of the CdS/Cu <sub/>2</sub> Zn(Sn <sub/>1-x</sub> Ge <sub/>x</sub> )Se <sub/>4</sub> Heterointerface and Electronic Properties at the Cu <sub/>2</sub> Zn(Sn <sub/>1-x</sub> Ge <sub/>x</sub> )Se <sub/>4</sub> surface: x = 0, 0.2, 0.4
摘要： The surface electronic properties of the light absorber and band alignment at the p/n heterointerface are key issues for high performance heterojunction solar cells. We investigated the band alignment of the heterointerface between cadmium sulfide (CdS) and Ge incorporated Cu2ZnSnSe4 (CZTGSe), with Ge/(Ge+Sn) ratios (x) between 0 and 0.4, by X-ray photoelectron, ultra-violet, and inversed photoemission spectroscopies (XPS, UPS, and IPES, respectively). In particular, we used interface-induced band bending in order to determine the conduction-band offset (CBO) and valence-band offset (VBO), which were calculated from the core-level shifts of each element in both the CdS overlayer and the CZTGSe bottom layer. Moreover, the surface electronic properties of CZTGSe were also investigated by laser-irradiated XPS. The CBO at the CdS/CZTGSe heterointerface decreased linearly, from +0.36 to +0.20 eV, as x was increased from 0 to 0.4; in contrast, the VBO at the CdS/CZTGSe heterointerface was independent of Ge content. Both UPS and IPES revealed that the Fermi level at the CZTGSe surface is located near the center of the bandgap. The hole concentration at the CZTGSe surface was of the order of 1011 cm-3, which is much smaller than that of the bulk (~1016 cm-3). We discuss the differences in hole deficiencies near the surface and in the bulk on the basis of laser-irradiated XPS, and conclude that hole deficiencies are due to defects distributed near the surface with densities that are lower than in the bulk, and the Fermi level is not pinned at the CZTGSe surface.
关键词： Solar cell,Kesterite,IPES,XPS,Band alignment,CZTGS,UPS
更新于2025-09-23 15:23:52
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Unique Substitution Effect at 5,5′ Positions of a Fused Azobenzene-Boron Complex with N=N Double-Bond π-Conjugated System
摘要： The recent report illustrates superior optical properties, such as near infrared emission, from the polymers with the connection positions at 4,4′ positions in the fused azobenzene–boron complex (BAz). In this study, we initially demonstrate that further narrower band gap can be realized by the substituent effect with bromine groups at 5,5′ positions of BAz than that at 4,4′ positions. From the series of mechanistic studies, perturbation of the energy levels were rationally explained by the contribution difference between the inductive effect and the variable resonance effect which is correlated to the degree of electron distribution of molecular orbitals at the substituent positions. Moreover, it was found that unique electronic states, such as delocalized highest occupied molecular orbital and localized lowest unoccupied molecular orbital, should appear on the main chains of the BAz-containing copolymers with fluorene and bithiophene units according to the optical and electrochemical data and theoretical calculations. Taking advantage of property tunability and the dramatic low LUMO energy level (near ?4.0 eV) of the BAz unit, it can be said that BAz should be a conjugated building block favorable for building advanced optoelectronic devices.
关键词： azobenzene,boron,narrow band gap,conjugated polymer,low LUMO
更新于2025-09-23 15:23:52
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Doping modulation of quasi-free-standing monolayer graphene formed on SiC(0001) through Sn1-Ge intercalation
摘要： In order to modulate the transfer doping of quasi-free-standing monolayer graphene (QFMLG) formed on SiC(0001), Ge atoms were intercalated additionally into QFMLG already formed by Sn intercalation between ZL and 6H-SiC(0001). By postannealing the Ge-deposited surface at 600 °C, the Sn1-xGex film with the 4 × √3 structure, composed of a bilayer and adatoms with dangling bonds under QFMLG, has been formed. It turns out that, in this Sn1-xGex film, Ge atoms preferentially occupy the bottom layer bound to the top Si atoms of the substrate, while Sn atoms occupy the top adatom sites. Strong correlation among the electrons localized at these adatom sites induces a semiconducting alloy film. As the postannealing temperature is increased up to 800 °C, the concentration of Ge in the intercalated film of the same 4 × √3 structure is gradually increased and the Dirac point also shifts gradually from ?0.16 eV to +0.20 eV relative to the Fermi level. Such a result confirms that the transfer doping of QFMLG on SiC(0001) has been modulated by varying the alloy composition of the Sn1-xGex interfacial film.
关键词： Scanning tunneling microscopy,Quasi-free-standing graphene,SnGe alloy intercalation,Hubbard band,Doping modulation,Photoemission spectroscopy,SiC(0001)
更新于2025-09-23 15:23:52
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A comparative ab initio study of the structural, mechanical, electronic and optical behaviors of ZnO:Ni thin films with nanometer scale
摘要： The electronic and optical properties of undoped and Ni–doped ZnO thin films with nanometer scale have been studied in the wurtzite phase, by first–principle approach. Density functional theory has been employed to calculate the fundamental properties of the films using full–potential linearized augmented plane–wave method. Ni doping was found to reduce the bandgap value of the material. Additionally, DOS effective mass of the electrons was evaluated. It was revealed that the effective mass of the electrons at the bottom of conduction band increased with Ni doping. Decrease of reflectance for thin films with nanometer scale in the UV–vis region was observed. The substitution by Ni decreased the intensity of the peaks, and a red shift was observed in the absorption peak. Moreover, the static dielectric constant, and static refractive index decreased with Ni content. Energy loss function of the modeled compounds was also evaluated. All calculated parameters were compared with the available experimental and other theoretical results.
关键词： DFT,band structure,structural properties,electronic behaviors,optical properties,ZnO:Ni thin film
更新于2025-09-23 15:23:52
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[Institution of Engineering and Technology 12th European Conference on Antennas and Propagation (EuCAP 2018) - London, UK (9-13 April 2018)] 12th European Conference on Antennas and Propagation (EuCAP 2018) - Dual Band Antenna For Portable Consumer Devices
摘要： The article proposes the design of a circular shaped patch antenna with a circular slot at its centre and a defected ground plane. The antenna operates in two distinct frequency bands, 2.3 GHz to 5.3 GHz and 7.2 GHz to 20 GHz and hence is suitable for applications in the S-band (2 GHz to 4 GHz), the X-band (8 GHz to 12 GHz) and the Ku-band (12 GHz to 20 GHz). The overall size of the antenna is 30mm*30mm*1.5mm which makes it suitable for applications in compact portable devices such as mobile phones, smart watches, bluetooth headsets, etc. Annealed copper is used as a conductor and the substrate is made up of FR4 which has an electrical permittivity of 4.3 and a loss tangent of 0.025. The simulated re?ection coef?cients, impedance curves and radiation patterns of the proposed antenna are described in detail in this paper.
关键词： antenna,impedance matching,simulations,ultra-wide band
更新于2025-09-23 15:23:52