修车大队一品楼qm论坛51一品茶楼论坛,栖凤楼品茶全国楼凤app软件 ,栖凤阁全国论坛入口,广州百花丛bhc论坛杭州百花坊妃子阁

oe1(光电查) - 科学论文

3 条数据
?? 中文（中国） ▾

  • [IEEE 2018 Wave Electronics and its Application in Information and Telecommunication Systems (WECONF) - Saint-Petersburg, Russia (2018.11.26-2018.11.30)] 2018 Wave Electronics and its Application in Information and Telecommunication Systems (WECONF) - MEMS Accelerometer with SAW

    摘要： was created the model of a microaccelerometer using MEMS technology. Were investigated the sensitivity and non-linear properties of the MEMS sensor in the commercial temperature range.

    关键词： microaccelerometer with SAW,slaser stimulated plasma etching,MEMS technology

    更新于2025-09-23 15:22:29

  • Millimeter-wave Air-filled Slot Antenna with Conical Beam Based on Bulk Silicon MEMS Technology

    摘要： In this communication, a millimeter-wave (mm-wave) air-filled slot antenna with a conical beam at 60 GHz is proposed. The antenna is suitable to be integrated with various IC systems mainly because it is designed and fabricated based on bulk silicon MEMS technology. The whole structure is composed of an antenna part and a waveguide to SIW converter. In the antenna part, four meander slots are arranged annularly and excited by a square air cavity. The conical radiation pattern benefits from the out-phase E field excited on slots. An operating bandwidth of 2.17% for S11 < -10 dB and a conical beam peak gain of 3.21 dBi are achieved. The proposed antenna shows its potentials in mm-wave indoor communication.

    关键词： IC integration,slot antenna,Millimeter wave,indoor communication,conical beam,bulk silicon MEMS technology

    更新于2025-09-16 10:30:52

  • Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology

    摘要： An electrodeposition process for void-free bottom-up ?lling of sub-millimeter scale through silicon vias (TSVs) with Cu is detailed. The 600 μm deep and nominally 125 μm diameter metallized vias were ?lled with Cu in less than 7 hours under potentiostatic control. The electrolyte is comprised of 1.25 mol/L CuSO4 – 0.25 mol/L CH3SO3H with polyether and halide additions that selectively suppress metal deposition on the free surface and side walls. A brief qualitative discussion of the procedures used to identify and optimize the bottom-up void-free feature ?lling is presented.

    关键词： Cu filling,MEMS technology,through silicon vias,electrodeposition

    更新于2025-09-04 15:30:14