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Research of Single-Event Burnout and Hardening of AlGaN/GaN-Based MISFET
摘要： This brief ?rst time presents single-event burnout (SEB) simulation results for conventional AlGaN/GaN gate ?eld plate MISFET (GFP-C MISFET), simultaneously, a hardened MISFET with electrode connected doped plugs in the buffer (EC-DP MISFET) is proposed for the ?rst time. The SEB triggering mechanisms contain the back-channel effect and following impact ionization dominated by electron in the high ?eld region. By comparing the simulation results from the GFP-C MISFET and proposed hardened EC-DP MISFET, the carriers induced by heavy ion can be quickly absorbed to drain and source electrode through EC-DP, so that the proposed EC-DP MISFET can achieve better SEB performance than conventional one. With a heavy ion having the linear energy transfer value of 0.6-pC/μm striking vertically, SEB threshold voltage obtained in GFP-C MISFET and hardened EC-DP MISFET is 280 and 338 V, respectively.
关键词： MISFET,single-event burnout (SEB) hardening,SEB,technology computer-aided design (TCAD),Electrode connected doped plugs (EC-DP)
更新于2025-09-23 15:23:52
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Sputter-Deposited-MoS2 nMISFETs with Top-Gate and Al2O3 Passivation under Low Thermal Budget for Large Area Integration
摘要： We have fabricated large area integrated top-gate nMISFETs with sputter-deposited-MoS2 film having n-type operation. A sputtering method enables us to form a large-area MoS2 thin film followed by H2S annealing to compensate sulfur vacancies. Two passivation films of ALD-Al2O3 enhance the process endurance of MoS2 channel. Therefore, we demonstrate TiN-top-gate nMISFET, which is a substantial first step to realize industrial chip-level LSIs with MoS2-channel FETs.
关键词： Top gate,MISFET,Transition metal di-chalcogenide,Sputtering,Passivation,Molybdenum disulfide,Large area integration
更新于2025-09-23 15:21:21
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Hydrogen effects on AlGaN/GaN MISFET with LPCVD-SiNx gate dielectric
摘要： In this work, the effects of hydrogen on AlGaN/GaN MISFET with SiNx gate dielectric were investigated. It is found that after the hydrogen exposure, (1) the AlGaN/GaN MISFET exhibits better DC performance with larger maximum transconductance, (2) the gate lag phenomenon is effectively suppressed and (3) the 1/f noise performance is improved with lower noise magnitude. These results are different from the previous observations in other III-V semiconductor devices. Based on the theoretical analysis by space charge limited current (SCLC) and low-frequency noise (LFN) models, we propose that the hydrogen treatment induces hydrogen incorporation into SiNx, which could passivate the defect centers. These findings demonstrate the high hydrogen tolerance of AlGaN/GaN MISFET.
关键词： LPCVD-SiNx,hydrogen effect,AlGaN/GaN MISFET
更新于2025-09-19 17:15:36
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Effect of Temperature and Electrical Modes on Radiation Sensitivity of MISFET Dose Sensors
摘要： The temperature and electrical modes influences on radiation sensitivity of n-channel MISFETs sensors of the total ionizing dose were investigated. There were measured the MISFET-based dosimeter output voltages V as function of the radiation doses D at const values of the drain current IDand the drain–source voltage VD, as well as the (ID–VG) characteristics before, during and after irradiations at different temperatures T (VGis the gate voltage). It was shown how the conversion function V(D) and the radiation sensitivity SD are depending on the temperature T for different electrical modes. To interpret experimental data there were proposed the models taking into account the separate contributions of charges in the dielectric Qt and in SiO2–Si interface Qs. The model’s parameters ΔVt(D,T) and ΔVs(D,T) were calculated using the experimental ID–VG characteristics. These models can be used to predict performances of MISFET-based devices.
关键词： electrical modes,ionizing dose sensors,radiation sensitivity,temperature,MISFET
更新于2025-09-19 17:15:36
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Vertical GaN n-channel MISFETs on ammonothermal GaN substrate: Temperature dependent dynamic switching characteristics
摘要： Switching of GaN-based vertical-trench gate MISFET on ammonothermal n-type GaN substrate are studied as a function of temperature. Pulsed ON-state IV characterization revealed three unexpected independent effects. First, drain current increases with temperature, although electron mobility decreases with temperature. Second, drain current decreases with pulse length, which cannot be explained by heating. Third, dynamic RON increases with OFF-state drain bias, which usually is considered as an issue of lateral GaN HFETs only. The drain current temperature dependence is most likely dominated by the low electron mobility in the inversion layer beneath the gate. The field effect channel mobility is estimated as < 10 cm2/V s and can thus be considered as trap limited and thermally activated, RON decreases from 133 Ω mm at 20 °C to 62 Ω mm at 110 °C. Longer ON-state pulses lead to negative charging of the ALD-Al2O3 gate oxide and shift the threshold voltage (DC-Vth ~8 V) positively. With the maximum applicable Vgs = 10 V, the drain current is not saturated yet and Ids thus drops by a factor 2 when increasing the ON-state pulse width from 0.2 μs to 20 μs due to the Vth-shift. The observed 10-times dynamic RON increase with OFF-state drain bias up to 30 V can be related to possible charging mechanism in the gate oxide as well. Activation energies for different OFF-state stress voltage are ranged linear between 0.08 eV and 0.26 eV for drain bias stress of Vds = 0 V and 30 V respectively.
关键词： Vertical GaN MISFET,Dynamic switching,Ammonothermal GaN substrate
更新于2025-09-10 09:29:36