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[IEEE 2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID) - Miramar Beach, FL, USA (2019.8.19-2019.8.21)] 2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID) - Ultra-Thin MSM Photodetectors with Nano-Structured Surface
摘要： The photon trapping structure helps to enhance the quantum efficiency (QE) in ultra-thin metal-semiconductor-metal (MSM) photodetectors so that they can achieve high speed while maintaining less than 1 micron thickness. The study shows that the short pulse response is shorter if the device is thinner. For the thin layer of Si with thickness 250nm the pulse response is 2ps, while for 400nm and 700nm the pulse responses are 3ps and 5ps, respectively. The QE for the thin layer of Si with nano-holes is higher than the flat Si with the same thickness. The QE for 250nm Si with nano-holes is 60% at 850nm wavelength, while for flat Si with the same thickness is 20%. The QE for 400nm Si with nano-holes is 80% at 850nm wavelength, while for flat Si with the same thickness is 40%. The QE for 700nm Si with nano-holes is 90% at 850nm wavelength, while for flat Si with the same thickness is 60%. The QE for 1500nm Si with nano-holes is 95% at 850nm wavelength, while for flat Si with the same thickness is 80%. The QE for the thin layer of Si with nano-holes is higher than the flat Si with the same thickness. The QE for 250nm Si with nano-holes is 60% at 850nm wavelength, while for flat Si with the same thickness is 20%. The QE for 400nm Si with nano-holes is 80% at 850nm wavelength, while for flat Si with the same thickness is 40%. The QE for 700nm Si with nano-holes is 90% at 850nm wavelength, while for flat Si with the same thickness is 60%. The QE for 1500nm Si with nano-holes is 95% at 850nm wavelength, while for flat Si with the same thickness is 80%.
关键词： MSM photodetectors,ultra-thin,quantum efficiency,nano-holes,photon trapping
更新于2025-09-16 10:30:52
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Study of Metala??Semiconductora??Metal CH3NH3PbBr3 Perovskite Photodetectors Prepared by Inverse Temperature Crystallization Method
摘要： Numerous studies have addressed the use of perovskite materials for fabricating a wide range of optoelectronic devices. This study employs the deposition of an electron transport layer of C60 and an Ag electrode on CH3NH3PbBr3 perovskite crystals to complete a photodetector structure, which exhibits a metal–semiconductor–metal (MSM) type structure. First, CH3NH3PbBr3 perovskite crystals were grown by inverse temperature crystallization (ITC) in a pre-heated circulator oven. This oven was able to supply uniform heat for facilitating the growth of high-quality and large-area crystals. Second, the di?erent growth temperatures for CH3NH3PbBr3 perovskite crystals were investigated. The electrical, optical, and morphological characteristics of the perovskite crystals were analyzed by X-ray di?raction (XRD), scanning electron microscopy (SEM), ultraviolet-visible spectroscopy, and photoluminescence (PL). Finally, the CH3NH3PbBr3 perovskite crystals were observed to form a contact with the Ag/C60 as the photodetector, which revealed a responsivity of 24.5 A/W.
关键词： inverse temperature crystallization,MSM photodetectors,CH3NH3PbBr3 perovskite crystals,large-area crystals
更新于2025-09-16 10:30:52